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Topic: Ohmic device

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	FDA/CFSAN: Kinetics of Microbial Inactivation for Alternative Food Processing Technologies -- Ohmic and Inductive ...
		Ohmic heating (sometimes also referred to as Joule heating, electrical resistance heating, direct electrical resistance heating, electroheating, and electroconductive heating) is defined as a process wherein (primarily alternating) electric currents are passed through foods or other materials with the primary purpose of heating them.
		Ohmic heating is distinguished from other electrical heating methods either by the presence of electrodes contacting the food (as opposed to microwave and inductive heating, where electrodes are absent), frequency (unrestricted, except for the specially assigned radio or microwave frequency range), and waveform (also unrestricted, although typically sinusoidal).
		For most ohmic processes, which rely on heat, it may be unnecessary for processors to claim this effect in their process filings; however, if sufficient data is available, it may be possible for future processes to be reduced.
	www.cfsan.fda.gov /~comm/ift-ohm.html (4298 words)

	Photovoltaic cell having structurally supporting open conductive back electrode structure, and method of fabricating ...
		A device as in claim 1, in which the photoresponsive layer comprises a semiconductor material having differently doped strata which define a junction therebetween, the photoresponsive layer generating a photovoltaic effect in response to light incident on the front surface.
		A device as in claim 1, in which the thickness of the photoresponsive layer is reduced from an initial value to a final value by grinding.
		A device as in claim 1, in which the thickness of the photoresponsive layer is reduced from an initial value to a final value by etching.
	www.patentmonkey.com /PM/PatentID/5034068.aspx (5021 words)

	Ohm's law - Wikipedia, the free encyclopedia
		The equation yields the proportionality constant R, which is the electrical resistance of the device.
		The law is strictly true only for resistors whose resistance does not depend on the applied voltage, which are called ohmic or ideal resistors or ohmic devices.
		To check whether a given device is ohmic or not, one plots V versus I and checks that the curve is a straight line or not.
	en.wikipedia.org /wiki/Ohm's_law (1260 words)

	Single layer integrated metal enhancement mode field-effect transistor apparatus - Patent 6066865
		Devices of this type may be less useful in the typically long term and energy limited applications of outer space for another example but may also be well suited to other applications, such as cost-influenced consumer goods operated from public utility energy sources.
		Devices which omit both or one of the layers 203 and 206 are in a strict sense no longer of the heterostructure type and are in fact more in the nature of MESFET transistor devices.
		Damage to the underlying semiconductor material of the ohmic contact layer is avoided by careful control of the reactive ion etch, by the somewhat rugged nature of the ohmic contact layer material and by reducing the reactive ion pressure to limit the etch rate achieved.
	www.freepatentsonline.com /6066865.html (15061 words)

	United States Patent Application: 0020145151
		As a result, a semiconductor light emitting device made of a gallium nitride based compound semiconductor is produced having an electrode structure of a superior ohmic contact characteristic and a superior wire bonding characteristic.
		A semiconductor light emitting device according to claim 1, wherein said substrate is formed of a sapphire, and a portion of said semiconductor lamination forming said light emitting region is formed of an InGaN based compound semiconductor being sandwitched by said n-type layer and said p-type layer.
		In this way, the conventional semiconductor light emitting device using a gallium nitride based compound semiconductor is liable to pose the problem of the wire bonding and the ohmic characteristic of the n-side electrode.
	appft1.uspto.gov /netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&u=/netahtml/PTO/search-adv.html&r=1&f=G&l=50&d=PG01&p=1&S1=20020063256.PGNR.&OS=DN/20020063256&RS=DN/20020063256 (3086 words)

	Raztek Publications/ Technical Info
		At first glance, ohmic heating seems straight forward, but for efficient implementation in the food industry, many factors have to be carefully considered and accurately quantified.
		In ohmic heating, the energy is introduced by the electrical current, which flows at the speed of light.
		To optimize the ohmic heating process and benefit from its potential advantages over conventional heating, the ohmic heater should be tailored to the specifications of the application.
	www.raztek.com /techinfo.html (4233 words)

	Resistor device
		Preferably, the ohmic contact and masking materials are selected to be impervious to reducing atmospheres and the ends of the body are treated for coating at least the unmasked bands of the body side surfaces with a material characterized by low electrical contact resistance.
		Where the masking and ohmic contact materials are selected to be impervious to reducing atmospheres and the like, substantially all of the PTC resistor material is protected against degradation of the PTC material in such atmospheres so that the device has wide application in different environments over a long service life.
		Many of such masking and ohmic contact coating materials are impervious to reducing atmospheres or are adapted to be impervious to and chemically inert with respect to various substances such as hydrocarbons and the like for shielding coated portions of PTC resistor materials against degradation when exposed to such substances.
	www.skk-banjaluckapivara.com /invent/orthopedic/resistor.html (3584 words)

	CdTe and CdZnTe Gamma Detectors Model of an Ohmic Contact
		A model of an ohmic contact is presented in effort to clarify the mechanism of their operation.
		Ohmic contact fabrication to various materials is a challenge.
		The contacts in gamma detectors should be ohmic with respect to both the dark leakage current and the gamma induced current.
	urila.tripod.com /ohmic.htm (2154 words)

	Open Systems
		To understand devices, one must consider the unnormalizable scattering states, and/or describe the state of the device in terms of statistically mixed states, which casts the problem in terms of quantum kinetic theory.
		The nonequilibrium state is characterized by the conduction of significant current through the device and/or the appearance of a nonnegligible voltage drop across the device.
		In classical transport theory, the openness of the device is addressed by the definition of appropriate boundary conditions for the differential (or integro-differential) transport equations.
	www.utdallas.edu /~frensley/technical/qtrans/node3.html (397 words)

	Heterojunction Device - Field Effect Transistor patents
		A semiconductor device includes a gate electrode formed on a silicon substrate in correspondence to a channel region via a gate insulation film, and source and drain regions of p-type formed in the silicon substrate at respective outer sides of sidewall insulation films on the gate electrode, a pair of...
		The semiconductor device in which a field effect transistor utilizing a heterojunction is formed in a device formation region sectioned by a device separation region of a substrate comprising a semiconductor layer laminated while including a semiconductor layer having a heterojunction on a semiconductor substrate.
		An electrical device in which an interface layer is disposed between and in contact with a metal and a Si-based semiconductor, the interface layer being of a thickness effective to depin of the Fermi level of the semiconductor while still permitting current to flow between the metal and the semiconductor.
	www.freshpatents.com /x1257192000psbc.php (6241 words)

	Coating With Electrically Or Thermally Conductive Material - To Form Ohmic Contact To Semiconductive Material patents
		According to one aspect of the invention, there is provided a semiconductor device fabrication method having: forming a film on a semiconductor substrate; forming a mask comprising a predetermined pattern on the film; etching one of the film and the semiconductor substrate by using the mask; and performing at least...
		A method of fabricating a semiconductor device including a first wiring pattern extending in a vertical direction and a second wiring pattern identical in geometry to the first wiring pattern and extending in a (horizontal) direction orthogonal to the vertical direction, including the steps of: employing linearly polarized illumination to...
		A manufacturing method of a semiconductor device disclosed herein, comprises: forming a first member to be patterned on a semiconductor substrate; patterning the first member to be patterned to form a plurality of parallel linear patterns and a connecting portion which connects the linear patterns on at least one end...
	www.freshpatents.com /x1438597000psbc.php (8590 words)

	Giancoli, Physics : Principles with Applications, 5/E Chapter 18 -- MCAT Study Guide
		The current through a device is measured as a function of the potential difference across the device for several different devices.
		The Ohmic device which has the largest resistance is represented by the curve labeled ___.
		The Ohmic device which has the smallest resistance is represented by the curve labeled ___.
	cwx.prenhall.com /bookbind/pubbooks/giancoli/chapter18/multiple2/deluxe-content.html (829 words)

	Ohmic device -- Facts, Info, and Encyclopedia article (Site not responding. Last check: 2007-10-02)
		According to Ohm's law where V is the voltage, I is the current and R is a constant called the (Group action in opposition to those in power) resistance.
		No actual device can demonstrate ideal resistance described by Ohm's law but many devices approximate ohmic devices closely.
		Examples of ohmic devices include resisters, pieces of wire and light bulbs (though the resistance changes with temperature).
	www.absoluteastronomy.com /encyclopedia/o/oh/ohmic_device.htm (73 words)

	Ohm's law (Site not responding. Last check: 2007-10-02)
		The relation even holds for non-ohmic devices, but then the resistance depends on and is not a constant anymore.
		To check whether a given device is ohmic or not, one plots versus and compares the graph to a straight line through the origin.
		When the temperature of the metal increases, that third factor increases, so that when a substance is heating up because of the electricity flowing through it, like the filament in a light bulb, the resistance actually increases.
	usapedia.com /o/ohm-s-law.html (444 words)

	CdTe Semiconductor Gamma Radiation Detectors equipped with ohmic contacts
		Therefore, ohmic contact detectors are not sensitive to the slow or even lack of hole movement, and there is no need of trapping compensation by an external circuit.
		Since ohmic contact detectors are not sensitive to hole movement, it would be advantageous to increase the electrons lifetime on expense of that of the holes.
		One is the ohmic contact effect, and one is proper positioning of the Fermi level within the forbidden band, that is, optimal electrical resistivity.
	urila.tripod.com /cdte.htm (1158 words)

	Passivation capping layer for ohmic contact in II-VI semiconductor light transducing device
		An ohmic contact is provided that electrically couples to the stack.
		A passivation capping layer overlies the ohmic contact and has an oxidation rate that is less than the oxidation rate of the ohmic contact.
		wherein during the step of depositing the ohmic contact, during step of depositing the passivation capping layer, and during a period between the steps, the ohmic contact is not exposed to air.
	www.kapere.com /376/passivation_capping_layer_for_ohmic_contact_in_ii-vi_semiconductor_6376273.html (364 words)

	Ohmic Contact Materials - Williams Advanced Materials
		The semiconductor substrate is often chosen by the operating characteristics and applications for the device.
		Ohmic contacts form the basis of connecting power to and from a semiconductor device and are critical to predictable operation.
		For each type of device or substrate material, different metallization schemes are used to form the ohmic contact.
	www.williams-adv.com /markets/ohmic-contact-materials.php (309 words)

	Dr. Shabbir A. Bashar's Ph.D. Thesis - Chapter 5, Section 4
		The application of Indium Tin Oxide in a solid state device, for example, requires a low resistance ohmic contact to the ITO which may itself be an ohmic contact or a Schottky contact.
		Ohmic contacts are defined as a metal-semiconductor contact with a linear or near linear current voltage characteristic; these have been discussed in greater detail in the following chapter.
		It is particularly useful when metals are deposited exclusively for making ohmic contacts to ITO devices as opposed to the usual case when a number of other devices are fabricated in tandem.
	www.betelco.com /sb/phd/ch5/c54.html (791 words)

	Monolithic semiconductor switching device (USRE33209)
		A monolithic semiconductor device as defined by claim 2 and including an ohmic contact to said fifth region.
		An electrical circuit device as defined by claim 12 wherein said first and second field effect transistors are formed in a semiconductor body and said means ohmically connecting said drain regions comprises a region of
		An electrical circuit device as defined by claim 12 wherein said semiconductor body includes an epitaxial layer and said first and second field effect transistors are formed in said
	www.delphion.com /details?pn=USRE033209__ (1174 words)

	Ohm's law Summary
		One electrical device in the electrical circuit is shown as a circle with + and - terminals.
		Voltage is the term used to quantify the electrical force that moves charge (electrons) through wires and electrical devices, current is the rate of flow of charge, and resistance is the property of a resistor that limits current to the amount that must flow under the applied voltage.
		Certain powered circuit devices, constructed as two terminal devices and tested as if they were a resistor (by applying a voltage across the two terminals while measuring the current), may exhibit actual negative resistance.
	www.bookrags.com /Ohm's_law (3636 words)

	Lab 3.2.1
		Purpose: The purpose of this experiment is to show that a graph of voltage versus current results in a straight line for an ohmic device, the slope of which is the resistance.
		A device which does this is called an ohmic device.
		Many devices are not ohmic because they heat up as more current is put through them, and their resistance is altered.
	www.usd.edu /phys/labs/em/3_2_1/3_2_1c.html (428 words)

	Ohm's law - Open Encyclopedia (Site not responding. Last check: 2007-10-02)
		where V is the voltage and I is the current; the equation yields the proportionality constant R, which is the electrical resistance of the device.
		To check whether a given device is ohmic or not, one plots V versus I and compares the graph to a straight line through the origin.
		When the temperature of the metal increases, that third factor increases, so that when a substance heats up because of the electricity flowing through it, as in the filament in a light bulb, the resistance actually increases.
	open-encyclopedia.com /Ohm%27s_Law (601 words)

	UNSW School of Physics Annual Report 2005
		By studying the dynamical response between individual phosphorus donors or P-clusters using gate voltage pulses or imposing a GHz microwave field, we are able to gain information about the charge state relaxation time, and energy level spectrum, respectively.
		Secondly we have developed a fabrication strategy to realize few atom dot devices, with the ultimate goal of fabricating few and single P atoms between source-drain leads to investigate the control of individual quantum mechanical charge and spin states.
		Figure 3 shows electrical results from a device consisting of an 80 nm diameter dot with source-drain leads separated by a gap of ~20nm.
	www.phys.unsw.edu.au /ANNUAL_REPORTS/2005/research2.htm (757 words)

	Schottky Diode
		the charge, field and potential distribution within the device) followed by a derivation of the current voltage characterisitics due to diffusion, thermionic emission and tunneling and a discussion of the non-ideal effects in Metal-Semiconductor junctions.
		An ideal Ohmic contact, a contact such that no potential exists between the metal and the semiconductor, is made to the other side of the semiconductor.
		A Schottky diode is a majority carrier device, where electron-hole recombination is usually not important. Hence, Schottky diodes have a much faster response under forward bias conditions than p-n junction diodes.
	www.mtmi.vu.lt /pfk/funkc_dariniai/diod/schottky.htm (4251 words)

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