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Topic: Photodetector

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Photo transistor

Electronic component

Photoresistor

Electrical resistance

Avalanche photodiode

Spectrometer

Photodiode

	Optical receiver having a low capacitance integrated photodetector - Patent 5189296
		2 illustrates a block diagram of a photodetector structure according to the present invention in which the effective capacitance of the photodetector is very small yet the alignment area of the detector is large enough to permit inexpensive alignment and connections.
		In particular, a plurality of electrodes attached to the gate of transistor 235 are interposed between a plurality of electrodes attached to busbar 205.
		Photodetector 233 is further connected to busbar 205 and capacitor 236 is further connected to busbar 210.
	www.freepatentsonline.com /5189296.html (3971 words)

	U.S. Patent: 5008544 - System for the detection of information in the form of electromagnetic radiation and reading the ...
		When photodetector 6 receives infrared radiation, it supplies an electron current I to the source 12 of the polarization transistor 8 and at the end of an integration time ti, a charge Q equal to I.ti is accumulated beneath the storage capacity 16.
		Photodetector 6, exposed to flux.phi.1 (respectively.phi.2) produces a current Il (respectively I2) constituting the ordinate of the intersection point of characteristic A and characteristic C1 (respectively C2) or the static operation point of the system exposed to flux.phi.1 (respectively.phi.2).
		When a plurality of photodetectors is provided, it is possible to use a single source 24 and a single source 26 for all the transistors 22 associated with these photodetectors and a single source 28 for all the transistors 8 also associated with said photodetectors.
	www.everypatent.com /comp/pat5008544.html (4246 words)

	Modulated TEA laser receiver - Patent 4628542
		For the high-amplitude output portion, a photodetector in the receiver is biased to low sensitivity; during the tail of the laser, the bias is increased to increase the photodetector sensitivity.
		A voltage -V biases photodetector 10 through choke L and load resistor R.sub.L such that 10 is in a low-sensitivity state during the absence of radiation 11 and during the high-amplitude portion of 11.
		Photodetector 10 is a photoresistor or photoconductor which varies in resistance (or conductivity) in response to radiation 11, such that the voltage at junction 12 likewise varies.
	www.freepatentsonline.com /4628542.html (1136 words)

	Automatic blanking circuit - United States Patent 4,257,709
		In an optical system including a light source and a photodetector, a circuit and method for compensating for degradation of the optical system which may include deterioration in the intensity of the light source, caused by a variety of factors such as dirt, aging of the light source, etc., or dirt on the photodetector.
		The intensity of the light from the light source as received by the photodetector is repeatedly measured and an average value determined which accurately indicates the intensity of the light received.
		The output of the photodetector 14, which is a signal varying in intensity with the light received, is coupled to an amplifier means 16.
	xrint.com /patents/us/4257709 (3411 words)

	United States Patent: 6,515,740
		Photodetector quantum efficiency is modulated to process detected signals to yield data proportional to the distance z separating the target and photodetector.
		Photodetector D will continue to be modulated with a signal that toggles between cos(.omega.t+5) and cos(.omega.t+6).
		Perhaps the illumination falling upon photodetector A differed from the illumination falling upon photodetector B. Perhaps the effective detection area of photodetector A differed from photodetector B due to component mismatching, or perhaps photodetector A was simply better fabricated and exhibits better detection characteristics.
	www.roeder-johnson.com /RJDocs/CA-Patent-6515740.html (17036 words)

	Space division switching system for communication networks using optical signal frequencies - Patent 4256927
		A space division switching and control system according to claim 1 or 2, wherein said photodetector means comprise a plurality of individual photodetector means respectively individually associated with said switches, said plurality of photodetector means being in the form of an integrated matrix of bipolar photodetectors switched by MOS transistors.
		For the duration of the call, photodetector Ri continues to receive light from inlet point Ai, what is detected by scanner EX and transmitted to control unit UC, that derives therefrom the charge which is to be transmitted to circuit TX.
		The the assembly of photodetectors Ri and the scanner EX may be embodied under the form of a matrix of charge transfer photodetectors or an integrated matrix of bipolar photodetectors switched by MOS transistors.
	www.freepatentsonline.com /4256927.html (3464 words)

	U.S. Patent: 5153860 - Optical pickup apparatus for detecting and correcting focusing and tracking errors in detected ...
		By way of example, the first photodetector 24 is composed of photodiodes PD1 and PD2 divided from each other by a gap extending in parallel with the y axis, and the second photodetector 25 is composed of photodiodes PD3 and PD4 divided from each other by a gap extending in parallel with the y axis.
		In the aforesaid five embodiments, the first photodetector 24 and the second photodetector 25 are secured to or integrated with the surface 22a of the optical waveguide 22, or coupled with the edge face 22b.
		13, 16 and 19, the first photodetector 124 and the second photodetector 125 are integrated on the surface 122a of the optical waveguide 122 or the surface 152a of the optical waveguide 152.
	www.everypatent.com /comp/pat5153860.html (11732 words)

	Electronic Products
		Photodetector responses vary according to the construction materials of the sensor and the wavelength (or light color) that is exciting the sensor.
		Photodetector manufacturers provide responsivity curves for the detectors presented as responsivity (measured in amperes per watt) per wavelength in nanometers.
		The current produced at the photodetector is converted by a transimpedence amplifier into voltage with a gain.
	www.electronicproducts.com /print.asp?ArticleURL=febnat1.feb2002 (714 words)

	Laser receiver using pin diode photodetector elements - Patent 6873413
		The orientation of the photodetector elements is such that the changes in the signal outputs from the elements which occur due to relative vertical movement of the reference light are inversely related.
		Because the casing of the detector device defines an aperture behind which the photodetector elements are positioned, when the beam is not normal to the photodetector elements, a portion of one of the photodetector elements near the edge of the aperture may be placed in shadow.
		The spacing between adjacent first additional photodetector elements and the spacing between adjacent second additional photodetector elements preferably are both greater than the spacing between adjacent ones of the plurality of photodetector elements in the generally vertically oriented row.
	www.freepatentsonline.com /6873413.html (4660 words)

	EOT - Electro-Optics Technology, Inc.
		The photodetector may not be suitable for the wavelength being observed.
		Particularly on lensed photodetectors, the active area may not actually be behind the center of the lens, so sweep the area in the vicinity of the center.
		As a general rule of thumb, the saturation of the photodetectors occurs at output voltages that are about 1/3 that of the bias voltage.
	www.eotech.com /techsupport/photodetectors/faqs.php (740 words)

	Photodetector Circuit (Site not responding. Last check: 2007-11-01)
		The current is converted to a voltage by the 56K ohm resistor connected from its collector to the positive supply voltage.
		The op-amp is wired as a voltage follower to isolate the photodetector circuit from the next stage.
		One method is to drill an assortment of holes in the wooden frame, and lightly press the photodetector into the hole that works best.
	www.oz.net /~coilgun/levitation/photodetector.htm (697 words)

	Waveguide photodetector patent invention (Site not responding. Last check: 2007-11-01)
		When a reverse voltage is applied to the photodetector, electrons and holes, that is, charges are generated and moved into an n-electrode and a p-electrode, respectively.
		The waveguide photodetector advantageously has a higher operating speed and higher efficiency than a surface illumination photodetector which is generally used.
		[0018] In the waveguide photodetector according to the present invention, the spacer may be made up of a material which is the same as that of the lower cladding layer, and the band gaps of the spacer and the absorbing layer may be adjusted to obtain a desired operating speed.
	freshpatents.com /Waveguide-photodetector-dt20050310ptan20050053349.php (1541 words)

	Incoherent and Coherent Optical Receiver System Schematics
		In this case, a simple PIN photodetector or photodetector array without any current gain it used to detect the optical signal.
		If an intensifier is not used, the photodetector must have gain for very sensitive detection, i.e., quantum noise limited sensitivity, and thus the device used may be an Avalanche Photodetector (APD) biased in the geiger-mode, or a photomultiplier.
		In a heterodyning receiver, a local-oscillator is used to beat or mix with the signal on the photodetector.
	www.coseti.org /radobs17.htm (679 words)

	Concept for Utilizing Full Areas of STJ Photodetector Arrays
		Photons in the energy range of interest are absorbed in the superconductor with the intermediate energy gap; this superconductor and the one with the lowest energy gap are separated by a layer of electrical insulation thin enough that photoexcited quasi-particles can tunnel (in the quantum-mechanical sense) through it.
		Two Adjacent Pixels of an STJ photodetector array according to the present method could be fabricated in either of two basic alternative configurations.
		In both configurations, the structure would behave like a solid ground plane for incident radiation at frequencies from dc up through hundreds of gigahertz, yet would present all (in the second configuration) or nearly all (in the first configuration) of its area for absorption of photons in the energy range of interest.
	www.nasatech.com /Briefs/Apr02/NPO20768.html (695 words)

	Mercuric Iodide PhotoDetector
		Constellation is developing a mercuric iodide photodetector with dramatically improved detection performance that will lead to the replacement of upgrade of a significant number of portable radiation detectors with a device that is much smaller, more rugged, and more stable under a variety of environmental conditions.
		Constellation is replacing the photomultiplier tubes with a large-area mercuric iodide photodetector that is applicable for most radiation protection and health physics applications.
		The mercuric iodide photodetectors will be much smaller, more rugged, and less susceptible to temperature and radio-frequency interference.
	www.contech.com /PhotoDetector.htm (139 words)

	High-Performance Photodetector Circuit for Doppler Lidar
		A photodetector circuit has been built for use in the receiver portion of a continuous-wave infrared Doppler lidar system for atmospheric research.
		The reason for developing the present photodetector circuit instead of using one of the many commercially available photodetector circuits is that a unique combination of high gain, high bandwidth, and low noise is needed for detection of the faint (power as low as 10
		The present photodetector circuit includes a photodiode, a load resistor, and amplifier circuitry.
	www.nasatech.com /Briefs/Dec00/NPO20558.html (596 words)

	Telescope and Photodetector Array Field-Of-Views
		In this situation, the photodetector element size, or pixel size, corresponds to the minimum spot size, and may be set to one-half the diameter of the Airy disk.
		As far as present-day commercial photodetectors are concerned, Ortel Corporation manufactures a state-of-the-art single photodetector device which has an active region 25 microns in diameter, and a -3 dB bandwidth of 12 GHz with a 50-ohm load.
		There are no 10 GHz photodetector arrays commercially available today, though we may expect that they will be available in a few years for fiber-optic communication applications, and for internal high-speed communications within large computers.
	www.coseti.org /radobs20.htm (1398 words)

	Boeing: Spectrolab Announces 10-Gb/s InGaAs PIN Photodetector For Fiber-Optic Communication Applications
		PIN means it is a positive-intrinsic-negative (PIN) Indium Gallium Arsenide (InGaAs) photodetector that operates at a speed of 10 gigabits per second (Gb/s).
		Photodetectors, which are used by subsystem manufacturers for the fiber-optic telecommunications market, are components that detect laser light in fiber-optic systems and translate that light into electrical current.
		This 10 Gb/s PIN InGaAs photodetector is designed for use both in long-haul transport and metropolitan telecommunications receiver systems carrying high-speed voice and data/Internet traffic.
	www.boeing.com /ids/news/sdc/2002-06-13-spectrolab.html (556 words)

	Silicon-based photodetector is sensitive to ultraviolet light
		CHAMPAIGN, Ill. -- By depositing thin films of silicon nanoparticles on silicon substrates, researchers at the University of Illinois at Urbana-Champaign have fabricated a photodetector sensitive to ultraviolet light.
		To create their ultraviolet-based photodetectors, Nayfeh, graduate students Satish Rao, Adam Smith and Joel Therrien, and undergraduate student Osama Nayfeh begin with nanoparticles dispensed from silicon wafers using electrochemical etching.
		TRECC is managed by the National Center for Supercomputing Applications and funded by a grant from the Office of Naval Research.
	www.eurekalert.org /pub_releases/2004-07/uoia-spi071904.php (396 words)

	Photodetector has silicon 4 x 4 array., UDT Sensors, Inc.
		The proprietary 4 X 4 array detector is designed to provide virtually complete isolation between all of the 16 elements with an extremely low crosstalk level (less than at 0.05% at 633 nm).
		Designed for use in a non-condensing environment, the operating temperature is -20 to +60 degrees C and the storage temperature is -20 to +80 degrees C. Special electro-optic options, custom packaging, or parts in die form are all available upon request.
		Based in Hawthorne, California, UDT Sensors is a subsidiary of OSI Systems, Inc. As the oldest and largest manufacturer of standard and custom photodetectors in the United States, UDT Sensors leads the optoelectronic industry in design, engineering and production of detectors, high-performance components and sub-assemblies.
	news.thomasnet.com /fullstory/457023/fyi (715 words)

	Article Archives
		The best way to actually measure light intensity is to use a photodetector, a device used for detecting and measuring the intensity of radiant energy through photoelectric action.
		The light is directed at the tile surface at a specified angle and then reflected off the surface and back to the photodetector.
		The photodetector is attached to an amplifier-rectifier and transformed into a signal that is proportional to the gloss.
	www.cmmonline.com /article.asp?IndexID=2350807 (798 words)

	ANADIGICS Press Room: GaAs ICs Optimize Optical Data Systems (Site not responding. Last check: 2007-11-01)
		The negative voltages are used to reverse bias the photodetector strongly and, hence, achieve low capacitance as well as excellent responsitivity.
		The operating temperature range is 0 to +70°C. Model AMT12130-2T46F/L employs a higher-wavelength (1300-nm) PIN photodetector with the same basic TIA as the model AMT128502T46F/L. It exhibits a minimum wave-length of 1270 nm and maximum wavelength of 1355 nm.
		More important, the commonly packaged photodetector and TIA have been closely matched for optimum performance, saving time in manufacturing and testing by facilitating optical alignment.
	www.anadigics.com /pressroom/gaas-optimize.html (1098 words)

	Quadrant photodetector based complete position sensing modules (Site not responding. Last check: 2007-11-01)
		Our modules consist of a photoquadrant detector, a sophisticated, proprietary circuit that amplifies and conditions the quadrant photodetector's signal and outputs a voltage that is proportional to the movement of your beam, all housed in a convenient, easy mounting housing with a cable and standard 9-pin plug.
		The combined outputs of the quadrant photodetector's two right elements (quadrants) less the combined outputs of the quadrant photodetector's two left elements (quadrants).
		The combined outputs of the quadrant photodetector's two top elements (quadrants) less the combined outputs of the quadrant photodetector's two bottom elements (quadrants).
	www.phreshphotonics.com /quadrant_photodetector_information.htm (174 words)

	Current to Voltage Converter for Polymer Electronics Laboratory
		In general, photodetectors produce currents proportional to incident light intensity, but the voltage drop across a photodector does not vary with current.
		By knowing the photodetector's specifications (such as its terminal capacitance and dark/leakage current) before designing the converter, one knows how the detector imposes constraints on the converter and how to design around them.
		In the photodetector, this currents are often called "dark currents." For the photodetector used here, the dark current is approximately -0.2nA.
	www.ee.calpoly.edu /~dbraun/polyelec/I-VConverter/I-VConverter.html (2442 words)

	photodetector Supplier Web Results
		Semiconductors (metalloids) or semiconductor materials are used to fabricate microelectronic and optoelectronic devices such as transistors, photodetectors or solar cells.
		The zeroth-order interference fringe is automatically kept within the 2 X 2 position-sensitive photodetector array by means of a transverse displacement of the microobjective in the reference arm...
		impact of the 1 mm projectile generated TL light, which was detected by the photodetector on the painted side of the aluminum plate.
	search.globalspec.com /Industrial/photodetector (377 words)

	Photodetector Measurements - Services and Uncertainties
		The measurement uncertainty is found in the Photodetector Measurement Services and Uncertainties table.
		Special tests of UV silicon photodiodes previously supplied by NIST (under 39071C) are performed by measuring spectral responsivity from 200 nm to 500 nm.
		The photodetector signal (either voltage or current) must be provided via a BNC connector.
	physics.nist.gov /Divisions/Div844/facilities/phdet/services.html (1166 words)

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