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Topic: Photoresist

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Positive resist

Photolithography

Plasma ashing

Etching

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Lithography

Photomask

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	Photoresist
		Photoresist is a material that is photographically exposed and processed, and used to "resist" a sandblast stream and thereby transfer a pattern to the object being sandblasted.
		When the film tool and photoresist material are placed between the two, and the vacuum pump is turned on, the vacuum pulls the flexible rubber blanket against the photoresist and film tool and hold them in very close contact.
		The photoresist material must be dried immediately after washout to prevent further softening and swelling from the surface water.
	www.sandcarver.org /photoresist.htm (2924 words)

	Photoresist Imaging
		photoresist and soldermask) are exposed using ultraviolet (UV) radiation in the range of 300 nm (nanometers) to 440 nm.
		Laminate a piece of substrate with the soldermask (or photoresist) that you intend to use.
		For DF 4615 Photoresist, the "exposure number" should fall between 7 and 10.
	www.thinktink.com /stack/volumes/volvi/filmimag.htm (1964 words)

	PrecisionMasks photoresist mask system for glass sandcarving and halftone photograph engraving.
		PrecisionMasks photoresist mask system for glass sandcarving and halftone photograph engraving.
		Professional quality- sharpest lines, finest details, ultimate reliability.
		The same film and equipment covers all applications.
	www.precisionmasks.com (76 words)

	Photoresist
		This means that I can use photoresist for all artwork, simplifying the process (I don't have to learn to use a plotter, or develop the hand skills necessary for freehand cutting).
		There are currently two primary suppliers of photoresist in the United States: Rayzist and Photobrasive Systems.
		The secret is to keep the abrasive stream moving, so that the temperatures don't rise to the point of destroying the resist.
	www.graydog.org /photoresist.htm (469 words)

	Photoresist
		Photoresist is an organic polymer which becomes soluble when exposed to ultraviolet light.
		The IL1440-A Photoresist Radiometer system was designed for direct measurement of the UV and blue visible irradiance used for exposing photoresist coated substrates in test and production environments.
		The IL1440-B Photoresist Radiometer and the IL1740-B Research Radiometer systems employ UV filtering designed specifically for photoresist applications requiring a peak sensitivity in the UVA and subdued response in the blue.
	www.able.co.uk /photoresist.html (367 words)

	Sedimentary deposition of photoresist on semiconductor wafers - Patent 5320864 (Site not responding. Last check: 2007-11-05)
		The sedimentary layer of photoresist is conformal in that it is of substantially uniform thickness irrespective of the topographical variations in the underlying wafer surface.
		Photoresist is "normally" supplied and applied in a solution of approximately 90% (ninety percent) casting solvent, such as ethyl lactate, and approximately 10% (ten percent) solids, such as novolac resin (diazoquinone).
		For example, a solution of photoresist is applied from a supply to the surface of the wafer, the supply is removed, and an anti-solvent is applied (from another, similar supply, not shown) to the mixture on the surface of the photoresist to cause the photoresist to sediment.
	www.freepatentsonline.com /5320864.html (6784 words)

	Photoresist - Wikipedia, the free encyclopedia
		Photoresist is a light-sensitive material used in several industrial processes, such as photolithography and photoengraving to form a patterned coating on a surface.
		Photoresists are most commonly used at wavelengths in the ultraviolet spectrum or shorter (<400 nm).
		This is associated with the outgassing and contamination from the photoresist.
	en.wikipedia.org /wiki/Photoresist (799 words)

	Chem 421 - The Chemistry of Photoresists
		The technology of photoresists has been refined to the point where many millions of micron-sized devices can be fabricated simultaneously and reliably on silicon substrates.
		Photoresists continue to be an active area of research for polymer chemists, as devices of ever smaller sizes are pursued.
		The earliest photoresists were based on the photocrosslinking of "cyclized rubber" using an additive that contained two azide groups.
	www.chem.rochester.edu /~chem421/polymod2.htm (1132 words)

	Willson Research Group - 157 Photoresist Materials
		In developing materials for 193 nm photoresists, potential polymers were considered as a single entity that offered all of the necessary characteristics for the final photoresist including etch resistance, ability to modify its solubility characteristics in the exposed regions, and transparency at the exposure wavelength.
		The total photoresist design has been broken down into four functional modules, each of which is responsible for imparting one necessary characteristic into the final polymer.
		For instance, in the IBM version 2 193 nm photoresist, a separate monomer is added to the polymer to impart each of the necessary requirements (1).
	willson.cm.utexas.edu /Research/Sub_Files/157/index.htm (585 words)

	Litho Processes: Lift-off
		During the actual lifting-off, the photoresist under the film is removed with solvent, taking the film with it, and leaving only the film which was deposited directly on the substrate.
		Photoresist will outgas very slightly in vacuum systems, which may adversely affect the quality of the deposited film.
		Basically, the standard photoresist procedure is used, but the wafer is soaked in chlorobenzene (for 10 minutes, typically) or toluene (for 1 minute, usually) either prior to UV-expose or just after, but prior to develop.
	snf.stanford.edu /Process/Lithography/liftoff.html (1081 words)

	Transene-NPD NEGATIVE PHOTORESIST DEVELOPERS
		During the development cycle, the unexposed photoresist is removed by a developer/rinse system, spray or immersion, leaving the substrate protected according to the exposed image.
		Photoresists are compatible with both acid and alkaline metal etchants and buffered hydrofluoric acid.
		Due to the proprietary nature of different etches used in the semiconductor industry, it is not possible to describe all the different effects on photoresist.
	www.transene.com /npd.html (300 words)

	Chem 421 - The Chemistry of Photoresists
		The technology of photoresists has been refined to the point where many millions of micron-sized devices can be fabricated simultaneously and reliably on silicon substrates.
		Photoresists continue to be an active area of research for polymer chemists, as devices of ever smaller sizes are pursued.
		The earliest photoresists were based on the photocrosslinking of "cyclized rubber" using an additive that contained two azide groups.
	chem.chem.rochester.edu /~chem421/polymod2.htm (1132 words)

	Method for fabricating semiconductor device using photoresist pattern formed with argon fluoride laser - usptntsrv
		To compensate the etch tolerance of the photoresist for ArF weaker than that of a photoresist for KrF, the main etching step is divided into three sub-steps, thereby providing a method for minimizing the pattern deformations when duplicating the pattern.
		Meanwhile, in case of a photoresist pattern used in forming a contact hole as an example of the isolated photoresist pattern, there occur problems of inducing a contact open defect or decreasing a contact area, thereby increasing contact resistance when employing an etching process with a consideration of etch tolerance of the photoresist pattern.
		Particularly, it is important to minimize deformations of the photoresist pattern at an initial etching step defining a predetermined number of patterns through duplications of the pattern from the photoresist.
	www.uspatentserver.com /686/6867145.html (1153 words)

	NIST - Materials Science Engineering Laboratory - Polymers Division - Research Highlights
		For the development step, where a latent image is realized into the final structure, an improved understanding of photoresist swelling and dissolution mechanisms is needed to address stringent line-edge roughness requirements.
		The role of liquids in contact with photoresist films is important; not only for component leaching and contamination, but also due to the detrimental influence of trace levels of water on the reaction and diffusion of photoacid generators.
		A key component is the depth profile of the aqueous base counterion through a photoresist film because it controls the dissolution mechanisms that lead to unacceptable LER.
	polymers.msel.nist.gov /highlights/Profiling_Photoresist-Liquid_Interface_Fundamentals_Immersion_Lithography_Polymer_Dissolution.html (1131 words)

	Photolithography
		A layer of photoresist (either positive or negative) is applied to the wafer surface, then exposed to untraviolet light through a mask.
		Pre-heat the Soft-Bake Oven to the temperature specified by the type of photoresist you are using.
		The exposure time should be set according to the particular type of photoresist and wattage of the bulb being used.
	www.ece.gatech.edu /research/labs/vc/processes/photoLith.html (1493 words)

	Etching of Polysilicon in an Inductively Coupled Cl2 and HBr Discharges: (Site not responding. Last check: 2007-11-05)
		Photoresist and oxide masked polysilicon samples were etched on a Lam TCP 9400SE, using both Cl and HBr discharges.
		Photoresist and oxide masked polysilicon samples were etched on a Lam TCP 9400 SE, an inductively coupled reactor in which the wafer is mounted on a rf biased electrode.
		The isotropic etching is within a order of magnitude of the ion induced directional etching because of the presence of large number of reactive Br radicals at the high inductive powers and the low ion energies due to the small DC bias.
	www.plasma-processing.com /exprof.htm (4365 words)

	International Light - Photoresist (Site not responding. Last check: 2007-11-05)
		Photoresist is a chemical substance that becomes insoluble by exposure to ultraviolet light.
		The photoresist is deposited on the metal, a pattern is placed on the metal and exposed to ultraviolet light.
		Photoresist is used in many applications within various industries.
	www.intl-light.com /application/photoresist (245 words)

	Willson Research Group - 157 Photoresist Materials
		Previous examples of hexafluoroisopropanols in photoresists consistently utilized tert-butyl carbonates for the protecting group, and therefore give no indication of what to expect with acetal protecting groups.
		As a result, the best method available to test the functional compatibility of these two moieties is to prepare a model photoresist polymer and evaluate the resulting lithographic ability.
		A photoresist formulation was prepared from the final copolymer for lithographic evaluation at an exposure wavelength of 193 nm.
	willson.cm.utexas.edu /Research/Sub_Files/157/Files/157_protect.htm (737 words)

	Semiconductors: Silicon: Device Fabrication: Photoresist Application
		There are two types of photoresists: positive and negative.
		Positive photoresists undergo weakening when exposed to irradiation, whereas negative photoresists are strengthened.
		The photoresist is applied by delivering a small amount of the liquid to the center of the wafer, then spinning the wafer at high speed to spread the material over the entire surface in a thin, uniform coating.
	www.osha.gov /SLTC/semiconductors/devicefab/photoresistapp.html (313 words)

	DuPont Electronic Technologies Introduces WB Dry Photoresist for Semiconductor Wafer Bumping at Semicon Europe (Site not responding. Last check: 2007-11-05)
		DuPont WB dry photoresist is an attractive alternative for wafer bumping vs. liquid resists.
		This thick, dry photoresist (from 50 to over 100 microns) is applied in one step, with no solvents or drying required.
		A range of WB dry photoresist thicknesses and formulations are available for use in lead free, photostencil and standard electroplating applications.
	www.dupont.com /pcm/icp/wb2-release.html (449 words)

	College of Nanoscale Science and Engineering - Research - Profiles
		Montgomery's third recent patent 7,067,227, "Sensitized chemically amplified photoresist for use in photomask fabrication and semiconductor processing," pertains to a photoresist composition and a method of using the photoresist in the fabrication of reticles or features on a semiconductor substrate.
		The photoresist composition and the method are designed to reduce the variation in critical dimension of features across a surface of a substrate, where the variation in critical dimension is a result of localized resist loading.
		The photoresist composition is useful when the imaging system is G-line, H-line, or I-line, and the photoresist composition includes a sensitizer which works in combination with a DUV photoresist including a PAC, to sensitize the photoresist to the G-line, H-line and I-line imaging.
	cnse.albany.edu /research/profiles.html (771 words)

	Laser Writer (Site not responding. Last check: 2007-11-05)
		The apertures are formed by first spin coating a glass substrate with photoresist sensitive to shorter wavelengths of light.
		Next, the substrate with the photoresist is coated with aluminum or other materials by sputtering in a vacuum chamber.
		Where the photoresist was removed by development, the aluminum adheres to the substrate and survives the immersion in acetone leaving the desired pattern on the substrate.
	www.optics.arizona.edu /milster/Labdescriptions/LaserWriter.htm (281 words)

	Photoresist Deposition With Nitrogen To Suppress The Dewetting Problem
		Generally, the photoresist is deposited onto a substrate (for example, a semiconductor wafer coated by a silicon dioxide layer), disposed onto a rotating spintable (about 3500 RPM).
		However, this surface pretreatment implies a shrinkage of the photoresist at the wafer edge with, consequently, a resist...
		TO cover the silicon dioxide layer with a thin photoresist film of 170000 Angstroms thick, an adhesion promoter is often applied on the oxide layer before the photoresist deposition in order to get a good photoresist adhesion during the subsequent oxide etching step.
	priorartdatabase.com /IPCOM/000067845 (395 words)

	PCB Fab: Photoresist Stripping
		Yet photoresist stripping is usually unnecessarily costly, misunderstood, often a process bottleneck, and a source of many reject boards, and that's on the good days.
		Photoresist is acidic, and the stripping process neutralizes thisacidity, and in the process of neutralization the alkalinity of the resist stripper is consumed.
		For the purposes of this talk, let us equate speed of stripping with quality of stripping, and of course, in general this is not a bad approximation.
	www.pcbfab.com /strppng.html (1817 words)

	The deep ultraviolet spectroscopic properties of a next-generation photoresist
		The photoresist was spin-coated onto a silicon wafer 10cm in diameter, and was characterized over the wavelength range 150 to 250 nm.
		The data obtained illustrates the homogeneity of the photoresist investigated, and further demonstrates the ability of the Cary Deep UV spectrophotometer to acquire high quality reflectance spectra in the deep UV region.
		The homogeneity of the photoresist coating was investigated by acquiring reflectance spectra at a number of different locations on the wafer surface.
	www.varianinc.com /cgi-bin/nav?products/spectr/uv/atworks/uv84&cid=NMLMIMPFJ (1146 words)

	Document Title
		Photoresists are critical components in a number of important commercial processes.
		Finally, the board is rinsed and the photoresist mask is removed with a suitable solvent.
		Other materials are postive photoresists: the surface is exposed in the areas that were subjected to light.
	www.bgsu.edu /departments/chem/faculty/endres/projects/photoresists.htm (1909 words)

	Photoresist Oven allows automated handling of 300 mm wafers., Despatch Industries
		To increase throughput, which varies depending on the length of the photoresist bake cycle, manufacturers may specify that Despatch add additional heat chambers to the system.
		Photoresist is a polymer layer that is coated onto the wafer and patterned using photolithography tools to make a circuit pattern.
		Heat-treating the photoresist layer onto the 300mm wafer is a necessary part of the process.
	news.thomasnet.com /fullstory/9377 (936 words)

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