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| | U.S. Patent: 5259923 - Dry etching method - November 9, 1993 |
 | | Accordingly, if the etching selection ratio between polycrystal silicon and the silicon oxide film is small, and the etching speed within the wafer surface cannot be sufficiently uniformed, the oxide silicon film is completely etched at a section of the wafer surface. |
 | | Next, to examine the etching characteristic of the polycrystal silicon film 42, the etching speed for phosphor-added polycrystal Si, and the uniformity thereof along with a variable high frequency power, were measured. |
 | | Then, etching of the underlaying polycrystal silicon was conducted by use of Cl.sub.2 as the etching gas under the conditions that: the high frequency power of 100W, the pressure of 75 m Torr, and the lower electrode temperature of -60.degree. |
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