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Topic: Polycrystalline silicon

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	Silicon - Open Encyclopedia (Site not responding. Last check: 2007-10-21)
		Silicon dioxide in the form of sand and clay is an important ingredient of concrete and brick and is also used to produce Portland cement.
		Silicon is a principal component of aerolites which are a class of meteoroids and also of tektites which is a natural form of glass.
		Silicon is commercially prepared by the heating of high-purity silica in an electric arc furnace using carbon electrodes.
	open-encyclopedia.com /Silicon (1307 words)

	Controlled temperature polycrystalline silicon nucleation - Patent 4087571
		Doped polycrystalline silicon is used for contacts to regions formed in the underlying monocrystalline semiconductor material, for conductive interconnection paths on the surface of an integrated circuit and for isolation between active elements of the integrated circuit.
		C were discovered to cause the diffusivity of impurities in overlying polycrystalline silicon layers to be substantially greater than the diffusivity of impurities in a polycrystalline layer formed, for example, on silicon dioxide without a nucleating layer.
		The upper temperature limit on the deposition of polycrystalline silicon is controlled by the fact that as a general rule one wants to form the epitaxial layer at as low a temperature as possible to prevent the previously diffused regions in the underlying semiconductor wafer from changing their diffusion profiles or out-diffusing.
	www.freepatentsonline.com /4087571.html (2328 words)

	Reversibly programmable polycrystalline silicon memory element - Patent 4420766
		A polycrystalline silicon memory element having an impurity concentration in the range of 10.sup.17 to 10.sup.20 atoms per cubic centimeter is reversibly switchable from a high to a low resistance state through a negative resistance region using a voltage above the threshold having a ramped trailing edge.
		The polycrystalline silicon memory element is switched from its high to a low resistance state through a negative resistance region by the application of a voltage having a magnitude exceeding a predesigned threshold voltage of the device and including a ramp trailing edge.
		The polycrystalline silicon memory element is switched from its low resistance state to a high resistance state by the application of a voltage greater than a threshold voltage and including a substantially straight trailing edge.
	www.freepatentsonline.com /4420766.html (2870 words)

	Learn more about Silicon in the online encyclopedia. (Site not responding. Last check: 2007-10-21)
		Silicon is the principal component of glass, semiconductors, cement, ceramics and silicones, the latter a plastic substance often confused with silicon.
		Ultrapure silicon can be doped with arsenic, boron, gallium, or phosphorus to make silicon more conductive for use in transistors, solar cells and other semiconductor devices which are used in electronics and other high-tech applications.
		Silicones are flexible compounds containing silicon-oxygen and silicon-carbon bonds; they are widely used in applications such as artificial breast implants and contact lenses.
	www.onlineencyclopedia.org /s/si/silicon.html (1282 words)

	Polycrystalline silicon resistor for use in a semiconductor integrated circuit having a memory device - Patent 5214497
		A polycrystalline silicon load resistor according to claim 1, wherein said resistor is formed on a main surface of a semiconductor substrate through an insulating film, and wherein said predetermined shape is selected so that said resistor occupies an area of said main surface which is 25.mu.m.sup.2 or less.
		A polycrystalline silicon resistor according to claim 11, wherein said polycrystalline silicon film is doped with impurities at a concentration between 8.times.10.sup.18 cm.sup.-3 and 5.times.10.sup.19 cm.sup.-3.
		A polycrystalline silicon resistor according to claim 11, wherein said resistor is formed on a main surface of a semiconductor substrate through an insulating film, and wherein said predetermined shape is selected so that said resistor occupies an area of said main surface which is 25.mu.m.sup.2 or less.
	www.freepatentsonline.com /5214497.html (4378 words)

	Polycrystalline silicon -- Facts, Info, and Encyclopedia article (Site not responding. Last check: 2007-10-21)
		These temperatures make deposition of polysilicon possible for (A brittle transparent solid with irregular atomic structure) glass substrates, but not for (Generic name for certain synthetic or semisynthetic materials that can be molded or extruded into objects or films or filaments or used for making e.g.
		Instead, a relatively new technique called laser crystallization can be used to crystallize a precursor (Click link for more info and facts about amorphous silicon) amorphous silicon (a-Si) material on a plastic substrate without melting or damaging the plastic.
		A complete polysilicon active layer process is also used in some cases where a small pixel size is required, such as in projection displays.
	www.absoluteastronomy.com /encyclopedia/p/po/polycrystalline_silicon.htm (353 words)

	Semiconductor device having MOSFET and deep polycrystalline silicon region - Patent 4805008
		Because, in the polycrystalline silicon, many electrons of silicon atoms remain unused for covalent bonding, the mobility of the minority carriers in the polycrystalline silicon is equal to or less than about 1/10 of that in the single crystal silicon.
		Secondly, the polycrystalline silicon region 26 near the n.sup.+ source region 3 of the nMOS 8 decreases the base resistance R.sub.7 of the transistor Q.sub.3, and the polycrystalline silicon region 28 near the p.sup.+ source region 12 of the pMOS 17 decreases the base resistance of the transistors Q.sub.2.
		The highly doped polycrystalline silicon regions 26 and 28 are formed in the same manner as in the first embodiment, and the highly doped polycrystalline silicon regions 32 and 33 are formed in the boundary of the p well region 2 in the same manner as in the second embodiment.
	www.freepatentsonline.com /4805008.html (6316 words)

	Solar Energy Technologies Program: Polycrystalline Thin Film
		Polycrystalline thin-film cells have a heterojunction structure, in which the top layer is made of a different semiconductor material than the bottom semiconductor layer.
		The term "thin-film silicon" typically refers to silicon-based PV devices other than amorphous silicon cells and single-crystalline silicon cells (where the silicon layer is thicker than 200 micrometers).
		Nanocrystalline silicon and small-grained polycrystalline silicon—considered thin-film silicon—may be able to replace amorphous silicon alloys as the bottom cell in multijunction devices.
	www.eere.energy.gov /solar/tf_polycrystalline.html (1099 words)

	What does Amorphous silicon mean? What is Amorphous silicon?
		Amorphous silicon is receiving much more attention at the present time because of the potential for roll-to-roll processing Roll-to-roll processing, also known as 'web' processing, is the process of creating electronic devices on a roll of flexible plastic or metal foil.
		This is in contrast to polycrystalline silicon (poly-Si) which consists solely of crystalline silicon grains, separated by grain boundaries.
		Polycrystalline silicon Polycrystalline silicon or polysilicon or poly-Si has long been used as the conducting gate material in MOSFET and CMOS processing technologies.
	www.ayil.hacettepe.edu.tr /pages/Amorphous/Amorphous%20silicon.html (1017 words)

	China Chemical Reporter: Production and Development of Polycrystalline Silicon.@ HighBeam Research (Site not responding. Last check: 2007-10-21)
		Polycrystalline silicon is mainly used to produce monocrystalline silicon and satellite solar energy cells.
		Monocrystalline silicon (silicon semiconductor) is a derivative of polycrystalline silicon and an excellent material in the production of integrated circuits and electronic components.
		Both the capacity and the output of polycrystalline silicon had a drop during the Seventh Five-year Plan period.
	www.highbeam.com /library/doc0.asp?DOCID=1G1:63607000&refid=ip_encyclopedia_hf (193 words)

	World Intellectual Property Organization (Site not responding. Last check: 2007-10-21)
		An anchor material (for example, silicon, silicon nitride, silicon carbide, germanium, silicon/germanium or gallium arsenide) may be deposited in the opening to form the anchor.
		silicon, amorphous silicon, silicon carbide, silicon/germanium, germanium or gallium arsenide.
		silicon and a second portion is comprised of a porous or amorphous silicon.
	www.wipo.int /ipdl/IPDL-CIMAGES/view/pct/getbykey5?KEY=05/17975.050224&ELEMENT_SET=DECL (8554 words)

	Method for fabricating a polycrystalline silicon film - US Patent 6794274 (Site not responding. Last check: 2007-10-21)
		When the laser irradiates the silicon film, the semitransparent film absorbs a portion of the laser energy, and the semitransparent film is kept at a high temperature during solidification of the silicon film.
		Polycrystalline silicon is an aggregate of single crystal grains, and thus there are many grain boundaries between crystal grains.
		Since the energy to melt the silicon film is the same in all the samples, the surplus laser energy should have bee absorbed by the semitransparent film (2) and converted to heat.
	www.patentstorm.us /patents/6794274.html (2058 words)

	United States Patent: 6,710,538 (Site not responding. Last check: 2007-10-21)
		The baseplate of claim 18 wherein the porous silicon dioxide comprises porous silicon dioxide prepared by anodization of polycrystalline silicon followed by oxidation of the anodized polycrystalline silicon.
		The baseplate of claim 18, wherein the porous silicon dioxide comprises porous silicon dioxide prepared by chemical etching of polycrystalline silicon followed by oxidation of the etched polycrystalline silicon.
		The baseplate of claim 24 wherein the porous silicon dioxide layer comprises silicon dioxide prepared by anodization of polycrystalline silicon followed by oxidation of the anodized polycrystalline silicon.
	web.engr.oregonstate.edu /~flf/6710538.html (6279 words)

	Journal of Electronic Materials: Laser recrystallization of polycrystalline silicon in recessed structures
		With the silicon layer below the oxide acting as a heat sink, the thickness, r, of the oxide in the recessed area controls the cooling rate of the recessed silicon.
		Silicon (100) wafers are thermally oxidized to 300 nm, following which recessed patterns are wet etched into the oxide layers.
		The molten silicon adjacent to the recessed area cools, and the temperature gradient causes the melt front to move outward from the chill zone, away from the recess.
	www.findarticles.com /p/articles/mi_qa3776/is_199708/ai_n8775770 (1188 words)

	Read about Polycrystalline silicon at WorldVillage Encyclopedia. Research Polycrystalline silicon and learn about ... (Site not responding. Last check: 2007-10-21)
		Polycrystalline silicon or polysilicon or poly-Si is a material consisting of multiple small
		amorphous silicon (a-Si) material on a plastic substrate without melting or damaging the plastic.
		laser pulses are used to heat the deposited a-Si material to above the melting point of silicon, without melting the entire substrate.
	encyclopedia.worldvillage.com /s/b/Polysilicon (359 words)

	Quality Policy
		To ensure the highest purity polycrystalline silicon and silicon source chemicals, trichlorosilane and intermediate silicon source chemicals are continuously analyzed by gas liquid chromatography and infrared spectroscopy for composition and trace elements.
		Electrically active impurities are tested on samples produced by either chemical vapor deposition of a polycrystalline silicon rod or deposition of an epitaxial single-crystal silicon layer.
		Using standard measurement techniques for polycrystalline silicon evaluation, impurities are determined using photoluminescence, Fourier transform infrared spectroscopy, and resistivity.
	www.hscpoly.com /Quality/quality.htm (542 words)

	OhioLINK ETD: Park, Jihong
		The electrical properties of polycrystalline silicon (p-type) were investigated by resistivity, C-V, and DLTS measurements.
		Ohmic contacts on polycrystalline silicon specimens were made successfully by Ga-In application by scrubbing or Al evaporation followed by short annealing.
		The electrical changes in polycrystalline silicon as a function of the annealing temperature were observed to depend on the oxygen content.
	www.ohiolink.edu /etd/view.cgi?case1061389017 (506 words)

	Method of producing a bipolar transistor with a laterally graded emitter (LGE) employing a refill method of ... (Site not responding. Last check: 2007-10-21)
		The method of claim 1, wherein said sidewalls are doped by the high concentration polycrystalline silicon resulting in said sidewalls having a higher concentration polycrystalline silicon material.
		Furthermore, silicon overetch existing due to the formation of oxide sidewall 6 acts as a trap creating a peak field under oxide layer 3 deteriorating a current handling capability to the oxide sidewall 6 and so on.
		type polycrystalline silicon sidewalls 12 are employed as a diffusion source for forming n type emitter region 5.
	www.patentstorm.us /patents/5147809.html (2323 words)

	IR bolometers made of polycrystalline silicon germanium (Site not responding. Last check: 2007-10-21)
		The electrical and mechanical properties of this material have been measured and the effects of the deposition conditions and annealing temperature on them have also been investigated.
		The complete process for the bolometer fabrication is presented and the possibility of reducing the process temperature to 650°C is demonstrated.
		The thermal behaviour of the device is fully analysed and it is demonstrated that the use of poly SiGe instead of polycrystalline Si (poly Si) decreases the thermal conductance of the device (values lower than 10 W K are obtained).
	www.lpmo.edu /~rpatois/biblioir/node70.html (145 words)

	NJMEMSI Projects (Site not responding. Last check: 2007-10-21)
		The polycrystalline silicon MEMS filters demonstrated to date exhibit significant acoustic losses and cannot be used in these frequency ranges.
		The low Q factor of the polycrystalline silicon resonant system is also partially due to damage of the backside of the structure during the release step.
		The polycrystalline silicon film decreases the Q factor by a factor of 11.
	www.njit.edu /v2/MRC/proj12.html (752 words)

	Kyocera \| News release
		Kyocera Corporation (President: Yasuo Nishiguchi) is pleased to announce the successful development of a new multicrystal silicon solar module to be mass produced for the general market, offering the world's best*1 module conversion efficiency at 15.7%.
		Through technological developments in the casting process, impurities in multicrystal silicon have been successfully reduced, and the quality of silicon wafers has been enhanced.
		The newly developed high-efficiency multicrystal silicon solar cells are used for the new-model modules.
	global.kyocera.com /news/2004/0803.html (821 words)

	Four poly EPROM process and structure comprising a conductive source line structure and self-aligned polycrystalline ...
		The charge itself is stored on a "floating gate" 10 also referred to as Poly 1 or P1, which is a structure of polycrystalline silicon (hereafter, poly) surrounded on all sides by a layer of oxide 12.
		In previous processes the gate oxide is etched away to bare silicon before the doping step to form the source regions in columns while the field oxide is discontinuous.
		The N+ doped silicon 16, 18 are self-aligned to the control gates 14 and floating gates 10 and will function as the transistor sources 16 and drains 18.
	freepatentsonline.com /5270240.html (5097 words)

	Knowledge King - Polycrystalline silicon (Site not responding. Last check: 2007-10-21)
		Although it can be deposited by low-pressure chemical-vapour deposition (LPCVD), plasma-enhanced chemical vapour deposition (PECVD), or solid-phase crystallinzation (SPC) of amorphous silicon, these processes still require relatively high temperatures of at least 300°C.
		Instead, a relatively new technique called laser crystallization can be used to crystallize a precursor amorphous silicon (a-Si) material.
		By precisely controlling the temperature gradients, researchers have been able to grow very large grains, of up to hundreds of microns in size.
	www.knowledgeking.net /encyclopedia/p/po/polycrystalline_silicon.html (265 words)

	Rob Ritchie's abstract (Site not responding. Last check: 2007-10-21)
		Based on the generally accepted fatigue mechanisms for brittle and ductile materials one would not expect single and polycrystalline silicon to be degraded by cyclic stresses.
		Silicon films subjected to stress amplitudes of approximately one half of the single-cycle fracture strength exhibit lives ~10
		It is proposed that the fatigue process is "surface dominated" and involves the mechanically-induced thickening of the native oxide film, followed by environmentally-assisted subcritical cracking of the thickened film.
	www.ae.utexas.edu /~ruihuang/abstracts/ritchie.html (176 words)

	Semiconductors: Silicon: Substrate Manufacture: Polycrystalline Silicon Production
		Next, the silicon is reacted with hydrogen chloride gas in the presence of a copper-containing catalyst to form trichlorosilane (SiHCl
		The trichlorosilane is reduced to very pure silicon by reacting it with hydrogen at high temperatures (about 1100ºC).
		Exposures to silicon dust may also occur; controls are similar to those used for crystalline silica.
	www.osha.gov /SLTC/semiconductors/substratemfg/polysiliconprod.html (375 words)

	shah-Low Temperature Polycrystalline Silicon Deposition
		The conventional active material in AM-LCD is hydrogenated amorphous silicon that has limitations due to its poor electrical properties and photodegeneration.
		In order to obtain high quality poly-Si film, effect of substrates on initial growth stage and the mechanism of Si growth at low temperature is also being studied.
		K. Xu and S. Shah, Effect of sputtering gas composition on low temperature deposition of polycrystalline silicon films, 44th Society of Vacuum Coaters Annual Technical Conference Proceedings, 33 (2001).
	www.udel.edu /mse/research/shah-LTPSD.htm (340 words)

	Mason, Maribeth Swiatek (2004-01-14) Synthesis of large-grained polycrystalline silicon by hot-wire chemical vapor ...
		In this study, we investigate the fabrication of large-grained polycrystalline silicon by hot-wire chemical vapor deposition (HWCVD) and its suitability for thin-film photovoltaic applications.
		The first is the direct growth of polycrystalline silicon on SiO2 by HWCVD.
		We use atomic force microscopy (AFM) to characterize fully continuous polycrystalline silicon films grown by HWCVD on SiO2, as well as the nucleation density of silicon islands formed in the early stages of HWCVD growth, as a function of temperature and hydrogen dilution (H2:SiH4).
	etd.caltech.edu /etd/available/etd-03182004-221215 (344 words)

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