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Topic: Polysilicon

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	Mitsubishi Polysilicon News Page
		And an ultra-pure polysilicon is essential to electronics functioning properly, he explained.
		Beyond electronics, polysilicon is used to generate solar power that, with rising energy prices, is getting renewed attention from consumers.
		We had a couple of employees with water damage in their homes and there were plenty of trees to help cut and remove.
	www.mpsac.com /news.htm (959 words)

	Polycrystalline silicon - Wikipedia, the free encyclopedia
		Polycrystalline silicon or polysilicon or poly-Si or simply poly (in context) is a material consisting of multiple small silicon crystals, and has long been used as the conducting gate material in MOSFET and CMOS processing technologies.
		A complete polysilicon active layer process is also used in some cases where a small pixel size is required, such as in projection displays.
		Polysilicon is a key component for integrated circuit and central processing unit manufacturers such as AMD and Intel, however it is also a key component of solar panel construction.
	en.wikipedia.org /wiki/Polysilicon (529 words)

	CWRU researchers demystify fatigue failure in polysilicon used in MEMS devices
		Polysilicon is a manufactured thin film consisting of silicon crystallites that is made in a microfabrication laboratory using chemical vapor deposition.
		Polysilicon MEMS structures, Heuer explained, contain many raised areas along their surfaces that act as stress concentrators and could result in microcracks when exposed to tensile or compressive stresses.
		To study the fatigue of polysilicon, Kahn and Bellante used on-chip test structures that rely on electrostatic actuation (the attraction to each other of two plates of opposite electrical charge) rather than an external testing machine.
	www.cwru.edu /pubaff/univcomm/2002/11-02/silicon.htm (541 words)

	Method of fabricating a one-sided polysilicon thin film transistor - Patent 5554548
		The polysilicon layer not covered by the screen oxide layer is doped with a p.sup.- -type dopant to form a lightly doped drain region on each side of the channel region.
		The polysilicon gate 12 is appropriately doped with a p-type dopant such as boron or an n-type dopant such as arsenic or phosphorous as known in the art.
		The polysilicon layer 16 is appropriately doped with an n-type dopant such as phosphorous or a p-type dopant such as boron to adjust the threshold voltage to a desired value.
	www.freepatentsonline.com /5554548.html (2894 words)

	Method of forming a polysilicon layer comprising microcrystalline grains - Patent 6962861
		A polysilicon layer is commonly used in the formation of a memory device, such as a flash memory device.
		Polysilicon is deposited at around 620° C. Alternatively, amorphous silicon may be deposited at a lower temperature, for example, 560° C. The amorphous silicon may then be transformed into polysilicon through annealing.
		In addition, by minimizing, or eliminating, the presence of valleys that cause electron trapping at the interface between the polysilicon layer and the gate oxide layer, the flash memory device formed with the method of the present invention exhibits a faster erase.
	www.freepatentsonline.com /6962861.html (1567 words)

	Modeling and characterization of quantization, polysilicon depletion, and direct tunneling effects in MOSFETs with ...
		To accurately model the polysilicon depletion effect, the free-carrier density in the polysilicon region is described by Fermi-Dirac statistics and an incomplete ionization model [11].
		Polysilicon depletion effects are directly related to the high fields as well as insufficient activation of dopants at the polysilicon/oxide interface.
		Polysilicon depletion effects significantly degrade the capacitance and therefore the transconductance of CMOS devices.
	www.research.ibm.com /journal/rd/433/lo.html (2968 words)

	Etching of Polysilicon in an Inductively Coupled Cl2 and HBr Discharges: (Site not responding. Last check: 2007-09-19)
		Photoresist and oxide masked polysilicon samples were etched on a Lam TCP 9400 SE, an inductively coupled reactor in which the wafer is mounted on a rf biased electrode.
		Ion induced chemical etching of polysilicon is known to decrease as the scattering angle increases beyond 45
		on polysilicon) of etching by-products from the plasma prevents the undercutting of the sidewall by both isotropic etching and ion impingement on the sidewalls.
	www.plasma-processing.com /exprof.htm (4365 words)

	Polysilicon shortages seen curbing semi growth (Site not responding. Last check: 2007-09-19)
		However, polysilicon demand by the solar-cell industry is slated to double to nearly 20,000 tons over the same period.
		Should the allocation ratio of polysilicon to IC and solar industries remain the same, J-Star predicted chip market growth of 6.3 percent this year and 8.7 percent next year—lower than the World Semiconductor Trade Statistics group's 10.1 percent forecast for 2006 and 11 percent in 2007.
		But there is a risk that change in polysilicon allocation brings a worse-case scenario for the semiconductor industry," he warned.
	eetimes.eu /germany/189700111 (739 words)

	Wacker to expand polysilicon capacity
		Wacker (Munich) said that it plans to expand its polysilicon capacity by an additional 4,500 metric tons to a total of 14,500 metric tons by the end of 2009.
		The main growth driver is the solar industry, which requires polysilicon for the manufacture of solar cells, said Peter-Alexander Wacker, president and CEO for the company.
		In a move to help solve the severe shortage of polysilicon materials in the marketplace, Hemlock last year announced plans to embark on a $400-to-$500 million expansion program in the United States.
	eetimes.eu /germany/189602649 (680 words)

	Stress in a polysilicon structural membrane
		The layer in contact with the polysilicon during processing influenced the final measured stress in the polysilicon blanket film.
		For a TEOS layer in contact with the polysilicon membrane during processing, the devices exhibited a deflected, tensile membrane device after sealing and a buckled, compressive polysilicon membrane device after processing.
		When the layer in contact with the polysilicon membrane during processing was LPCVD polysilicon or LPCVD nitride, the patterned devices were deflected, exhibiting tensile post-sealing characteristics.
	stacks.iop.org /0960-1317/10/223 (441 words)

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