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Topic: Quantum Effect Devices

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	Innovative R&D and Computational Nanoscience Redefines Nanophase Materials
		Nanotech-based quantum dots impart special optical and electrical properties to materials that are significant from fundamental and technological perspectives.
		Quantum dots are able to emit a wide range of wavelengths of light with changes in size.
		Research in quantum dots has progressed from continuous improvement of synthesis and manipulation of individual quantum dots to creation of high-density quantum dot assemblies and preliminary fabrication of real-life optoelectronic and biomedical devices.
	www.physorg.com /news1248.html (655 words)

	Quantum effect switching device - Patent 5646418
		A quantum device constructed according to the teachings of the present invention is formed by adding to the resonant tunneling diode a gate conductor 24 disposed adjacent second tunnel barrier layer 18.
		Quantum well 90 may be formed to be on the order of 100 Angstroms in width in the x direction, 100 Angstroms in height in the z direction and 200 Angstroms in depth in the y direction.
		Device 160 is similar to device 144 in that it is constructed on the outer surface 152 of a intrinsic semiconductor substrate 146 having side surfaces 148 and 150 forming a corner 154.
	www.freepatentsonline.com /5646418.html (8690 words)

	TheStreet.com: Three California Firms Soar in Their Trading Debuts
		Quantum Effect, based in Santa Clara, Calif., makes high-speed microprocessors, or chips, used in computers, networking infrastructure equipment and other communications equipment.
		Quantum Effect increased its initial offering price to $16 from the $10-$12 range as institutional investors opened their arms and wallets to the chip maker.
		Quantum Effect will have to quickly build and diversify its customer base to meet the cutthroat challenges.
	www.thestreet.com /brknews/general/874597.html (534 words)

	Nano Technology- Products, and Applications.
		However, the laws of quantum mechanics, and the limitations of materials and fabrication techniques are making it very difficult for further reduction in the minimum size of today's semiconductor transistors.
		Present-day field effect transistors (FETs) on commercial integrated circuits are approximately 1 micron or 1000 nm across, and it is believed that bulk-effect FETs will cease to function effectively when their gate lengths dip below 25 nm, which corresponds to an overall device length of approximately 100 nm.
		Solid state quantum-effect nanoelectronic devices might be made as small as approximately 12 to 25 nanometers across and still expected function effectively.
	www.tutorialsweb.com /nanotech/page-5.htm (636 words)

	Quantum Explanation
		This energy wave has a profound effect on the performance of electrical appliances within a given area of its location.
		The QRT hardware platforms may be applied to electronic devices and systems where problems of signal integrity and noise exist.
		Quantum manufactures a limited line of commercial products for re-sale, and welcomes opportunities to work with interested marketing/distribution companies.
	www.quantumqrt.com /explanation.htm (378 words)

	QED - Wikipedia, the free encyclopedia
		Q.E.D., a Latin phrase used at the end of a definitive proof
		QED (TV documentary series), a British science series
		This page disambiguates a three-character combination which might be any or all of an abbreviation, an acronym, an initialism, a word in English, or a word in another language.
	en.wikipedia.org /wiki/QED (135 words)

	Spintronics books \| Spintronics-Info
		Interlayer exchange coupling, exchange bias, proximity effects, giant magneto-resistance, tunneling magneto-resistance, spin spininjection and spintransport are examples for new physical phenomena, which relay on the combination of various metal, semiconductor, and oxide layers.
		The spin degree of freedom is an intrinsically quantum-mechanical phenomenon, leading to both intriguing applications (such as quantum information storage and processing) and unsolved fundamental issues (such as "where does the proton spin come from").
		This thesis focuses on the two important parts in the spintronic devices based on the spin field effect transistor: (1) the ferromagnetic GaMnAs thin films which is the source-drain material and (2) the Rashba spin-orbit coupling in a two-dimensional electron gas in which the spin can be transported and its polarization can be tuned by external gates.
	www.spintronics-info.com /books (955 words)

	Quantum Effect Devices
		With the gate voltage used to electrically constrict the dimensions of the charge island, the physical dimensions of the source-drain pillar, and thus the charge island, are not as critical so the lithography constraints are eased and an SET could be formed in an easier and more reliable process.
		Devices were tested and the tunneling resistance, RT, was extracted for comparison to the design values.
		Pang, "Effects of Etch-Induced Damage on the Electrical Characteristics of In-Plane Gated Quantum Wire Transistors", J.
	www.eecs.umich.edu /~pang/projects/QD.html (1515 words)

	Wiley::GaAs High-Speed Devices: Physics, Technology, and Circuit Applications
		GaAs High-Speed Devices provides a comprehensive, state-of-the-science look at the phenomenally expansive range of engineering devices gallium arsenide has made possible—as well as the fabrication methods, operating principles, device models, novel device designs, and the material properties and physics of GaAs that are so keenly integral to their success.
		The advances in fabrication techniques described in previous chapters necessitate an examination of low-dimension device physics, which is carried on in detail in chapter 6 of part three.
		GaAs High-Speed Devices provides the first fully comprehensive look at the enormous range of engineering devices gallium arsenide has made possible as well as the backbone of the technology—ication methods, operating principles, and the materials properties and physics of GaAs—device models and novel device designs.
	www.wiley.com /WileyCDA/WileyTitle/productCd-047185641X.html (764 words)

	QUANTUM EFFECT DEVICES' SHIPS 300MHz MIPS RISC PROCESSOR
		QED expects to exceed 300MHz in Q4 1999 when the RM5271 becomes available in 0.18 micron technology.
		Quantum Effect Design’s RM52xx and RM7000 product families include 32- and 64-bit embedded microprocessors targeted at emerging and fast-growing markets such as internetworking, printers, games, Windows CE-based devices, Internet TV/set-top boxes/cable modems and high-speed communications devices.
		MIPS is a registered trademark and R5000 a trademark of MIPS Technologies, Inc. R4600, R4700, R4650, and R4640 are trademarks of Integrated Device Technology, Inc. RISCMark, RM5230, RM5260, RM5270, RM52xx and RM7000 are trademarks of Quantum Effect Design, Inc. All other trademarks mentioned herein are the property of their respective owners.
	bwrc.eecs.berkeley.edu /CIC/announce/1999/RM5271-300.html (536 words)

	Integration of semiconductor and superconductor electronics on the nanoscale
		The device is fabricated on an oxidized doped silicon wafer that is used as a gate electrode in order to control the supercurrent.
		The demonstrated high yield of the superconducting devices is an important requirement for the successful up scaling to small superconducting circuits incorporating multiple nanowire devices.
		Such a device could be useful in solid-state quantum computer architectures as a switchable coupling element between superconducting quantum bits.
	www.physorg.com /news5043.html (760 words)

	Theoretical Chemistry, KTH
		The goal of our studies in the field of molecular electronics is to gain more of the necessary understanding of the physical and chemical processes involved, to develop efficient computational approaches to simulate the electron transportation of molecular devices and finally to use these to optimize the performance of the devices.
		In this context we also emphasize our concept of spin catalysis which comprises a wide range of phenomena in which chemical reactions are promoted by substances assisting to overcome spin-prohibition.
		The list of applications include also non-linear effects appearing in strong fields and direct simulations of solution, and to generally apply this multiscale methodology throughout entire DALTON quantum chemistry package.
	www.theochem.kth.se /research (1382 words)

	Barry Cox: ZoomInfo Business People Information (Site not responding. Last check: )
		Cox was the Chairman of the Board of Quantum Effect Devices from 1998 to 2000.
		Cox was an active member of management and Chairman of the board of Quantum Effect Devices (QEDI), a fabless semiconductor company from July, 1998 until August, 2000.
		QED is currently in registration for an initial public offering.
	www.zoominfo.com /people/cox_barry_5476760.aspx (558 words)

	PMC, Quantum to merge - Jul. 12, 2000
		Quantum, which has a market capitalization of roughly $2.1 billion, went public in February, offering 3.7 million shares at $16 per share.
		Quantum is known as an open architecture company as opposed to a network processor company.
		Cisco is also one of Quantum's clients, accounting for 10 percent of its revenue, according to the company.
	money.cnn.com /2000/07/12/deals/pmc (856 words)

	EETimes.com - Quantum wires spin holes
		Quantum effects result from the confinement of electrons, or holes, by restricting their free movement (perpendicular to the direction of crystal growth for quantum dots), thereby enabling their quantum effects to dominate.
		Ballistic transport in quantum wires, bound electron-holes (excitons) in semiconductor quantum dots and optical control of spin polarization were also hot topics.
		New methods of handling nitrides, Bose condensates and quantum-effect optical devices such as quantum-cascade lasers and single-photon lasers are also emerging, researchers said.
	www.eetimes.com /showArticle.jhtml?articleID=191204807 (346 words)

	Clarkson University - Calendar
		The continuing miniaturization of SOI devices, with available Si channel and gate insulator thickness dropping to the nanoscale, as well as integration of ultrathin SOI with novel dielectrics and gate materials, is opening the door to Si-compatible quantum effect devices.
		This is important because a great many quantum effect devices demonstrated in bandgap-engineered III-V hetero-structures have not been used in mainstream technology, which is dominated by Si.
		Still, the point is that novel devices and functionalities can still be grafted onto the rapidly growing SOI technology -- an opportunity that device physicists should not miss.
	www.clarkson.edu /calendar/index.php?entry_id=247 (255 words)

	Forbes.com - Magazine Article (Site not responding. Last check: )
		Turnstone Systems (nasdaq tstn (tstn), Quantum Effect Devices qedi (nasdaq: qedi) and Sequenom sqnm (nasdaq: sqnm) all soared more than 200% from their offer to opening price this morning but did little after that.
		The winner for first day after-market performances was microprocessor manufacturer Quantum Effect Devices, which opened at $39.25 after pricing at $16 and then closed at $56.50, up 44%, but still well below last year's average of 64%.
		Although rate pressures seem to be having only a mild effect now, Defanctis noted that pent-up demand could be lessening the effects of a broader trend.
	www.forbes.com /2000/02/01/mu6_print.html (444 words)

	Fool.com: PMC-Sierra Buying More IP [News] July 12, 2000
		With today's acquisition of QED, the company is looking to create more value for shareholders by extending its implementation ability to embedded RISC microprocessors.
		QED revamped its business in 1997 and has been increasing its focus lately on supplying high-performance and low-power embedded microprocessors to infrastructure networking clients such as Lucent (NYSE: LU), Extreme Networks (Nasdaq: EXTR), and Cisco Systems (Nasdaq: CSCO), which also happens to be an investor in the firm.
		To paraphrase one information technology observer, the value of a company like QED (which is a fab-less design firm like PMC-Sierra) isn't on their balance sheet; it's in their elevators.
	www.fool.com /news/2000/pmcs000712.htm (578 words)

	Bessemer Venture Partners - News & Events
		Tom co-founded and served as President and CEO of Quantum Effect Devices (NASDAQ:QEDI), a BVP-funded semiconductor company that PMC-Sierra acquired for $2.3 billion in 2000.
		Most recently, he was Vice President of the microprocessor division at PMC-Sierra, the purchaser of Quantum Effect Devices.
		Prior to co-founding QED, Tom was director of CMOS VLSI for MIPS Computer Systems, where he led the development of the R4000 64-bit microprocessor and the M2000 20 mips computer system.
	www.bvp.com /news/pr.asp?id=698 (827 words)

	PMC-Sierra - SoC Benefits Tutorial
		Kinsel was a Principal Engineer at Quantum Effect Devices, Inc. since its inception in August 1991.
		Quantum Effect Devices, Inc. designed, developed and marketed high-performance, cost-effective, and market-driven embedded microprocessor solutions.
		Quantum Effect Devices was acquired by PMC-Sierra in August 2000.
	www.pmc-sierra.com /webinars/soc_tutorial.html (390 words)

	MITRE - MITRE Nanosystems Group - Who's Who in Nanoelectronics (Site not responding. Last check: )
		Their quantum cellular automata are a very important new idea that is stimulating important new research into potential designs and architectures for electronic nanocomputers.
		Capasso works at ATandT where he performed some of the earliest work on "resonance tunneling devices," the class of quantum effect devices that are viewed as among the the more likely candidates for employment as a nanometer-scale transistor.
		A leading investigator in the area of solid-state quantum-effect devices, he is an expert and proponent for using methods of chemical self-assembly for the fabrication of next-generation nanoelectronic devices.
	www.mitre.org /tech/nanotech/whoswho.html (2186 words)

	Quantum computer and molecular electronics: two sides of the same coin
		One objective of current research is the fabrication and characterization of a molecular rectifier based on a single molecule (UEYA91, FISC94).
		Quantum-effect devices, which exploit the wave-like properties of electrons at the atomic level, are the subject of intense research at universities and corporate research institutes.
		That is because physics predicts quantum-effect devices should switch many hundreds of times faster, and consume much less energy, than today's transistors.
	www.foresight.org /Conferences/MNT05/Abstracts/Wei2abst.html (846 words)

	Quantum computer and molecular electronics: two sides of the same coin
		One objective of current research is the fabrication and characterization of a molecular rectifier based on a single molecule (UEYA91, FISC94).
		Quantum-effect devices, which exploit the wave-like properties of electrons at the atomic level, are the subject of intense research at universities and corporate research institutes.
		That is because physics predicts quantum-effect devices should switch many hundreds of times faster, and consume much less energy, than today's transistors.
	www.islandone.org /Foresight/Conferences/MNT05/Abstracts/Wei2abst.html (903 words)

	[No title]
		When measured with ac at kilohertz frequencies the quantized Hall resistance (QHR) of a quantum Hall effect (QHE) device is usually found to be current- and frequency-dependent.
		Charging is induced by the passage of the Hall current and by capacitive coupling between an edge and any nearby conductor maintained at an ac potential different to that of the edge, as for example at shield potential.
		We propose a simple method for approaching that balance condition: gates are located under the device edges and their ac potentials adjusted so that the QHR current coefficient, evaluated at a constant frequency, is zero.
	stacks.iop.org /0026-1394/37/659 (414 words)

	Edward Van Gieson \| Attorneys \| Cooley Godward LLP
		At Cornell University he was a research assistant in a high speed microwave device group studying quantum effect transistors and optical devices for radar systems, communication systems, optical networks, and next generation computers.
		His technical career has included research in high speed compound semiconductor microwave devices, the growth and fabrication of quantum effect devices, high speed optoelectronic devices, optical interconnects, free space optical communication systems, integrated optics, and semiconductor laser design.
		Van Gieson has authored or coauthored over a dozen technical publications and is an inventor of three issued U.S. patents related to high power lasers and quantum effect optoelectronic devices.
	www.cooley.com /attorneys/bio.aspx?ID=000037214801&print=true (442 words)

	PMC-Sierra To Acquire Leading MIPS® Processor Company, Quantum Effect Devices (Site not responding. Last check: )
		QED's products are very complementary to PMC-Sierra's solutions for the access and core infrastructure applications which include our recent acquisitions of several DSP-based technology companies," Bailey noted.
		Quantum Effect Devices, Inc., founded in 1991, designs, develops and markets high-performance, cost-effective, market-driven embedded microprocessor solutions.
		A description of any interests that Quantum Effect Devices' directors and executive officers have in the merger will be available in the Proxy Statement/Prospectus.
	www.us.design-reuse.com /news/?id=1446&print=yes (955 words)

	System and Circuit Aspects of Nanoelectronics - Goser, Pacha (ResearchIndex)
		Resonant tunneling transistors, single electron transistors, and quantum cellular automata are reviewed as relevant nanoelectronic device categories.
		In regard to the limited interconnectivity and the sensitivity of the devices to parameter variations we discuss bit level systolic arrays, a propagate instruction array processor, and fault tolerant...
		From the technological point of view resonant tunneling devices are presently the most mature type of quantum effect device because...
	citeseer.ist.psu.edu /goser98system.html (877 words)

	PhysOrg.com: nanotech news
		For the past several decades, virtually all electronics devices have been based on the CMOS logic system, which uses semiconductors and transistors to form digital circuits.
		Using room-temperature processing, researchers at the Georgia Institute of Technology have fabricated high-performance field effect transistors with thin films of Carbon 60, also known as fullerene.
		Achieving the desired effect is often only a question of the right place and the right moment - and this also applies to drugs.
	nanotech.physorg.com (648 words)

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