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Topic: Radiative recombination

In the News (Tue 22 Dec 09)

Northern Trust

Marvin Harrison

Peter Chernin

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Penelope Cruz

Mickey Rourke

AR Rahman

Danny Boyle

Hugh Jackman

	Recombination data
		Radiative recombination rates for H-like, He-like, Li-like and Na-like ions over a broad range of temperature.
		We present new calculations and analytic fits to the rates of radiative recombination towards H-like, He-like, Li-like and Na-like ions of all elements from H through Zn (Z=30).
		Recombination line intensities for hydrogenic ions: the fine structure components of HI and HeII.
	www.pa.uky.edu /~verner/rec.html (283 words)

	2.11 Carrier generation and recombination
		Recombination of electrons and holes is a process by which both carriers annihilate each other: the electrons fall in one or multiple steps into the empty state which is associated with the hole.
		Band-to-band recombination occurs when an electron falls from its state in the conduction band into the empty state in the valence band which is associated with the hole.
		Recombination in a depletion region and in situations where the hole and electron density are close to each other can not be described with the simple model and the more elaborate expressions for the individual recombination mechanisms must be used.
	ece-www.colorado.edu /~bart/book/recomb.htm (1500 words)

	Types of Recombination
		Radiative recombination is the recombination mechanism which dominates in devices such as LEDs and lasers.
		Therefore, if an energy is introduced close to either band edge, recombination is less likely as the electron is likely to be re-emitted to the conduction band edge rather than recombine with a hole which moves into the same energy state from the valence band.
		An electron and a hole recombine, but rather than emitting the energy as heat or as a photon, the energy is given to a third carrier, an electron in the conduction band.
	www.udel.edu /igert/pvcdrom/SEMICON/RECTYPE.HTM (419 words)

	[No title]
		Radiative recombination coefficients are required for various problems in physics and astrophysics; one such problem is the calculation of the ionization equilibria and recombination spectra of gaseous nebulae.
		A program has therefore been written to calculate the coefficients alphan(Z,T) for radiative recombination to energy levels of principal quantum number n of hydrogenic ions, Z being the nuclear charge and T the electron temperature.
		The recombination coefficients are expressed as integrals over the photo-ionization cross-sections, which are evaluated using the first three terms in the asymptotic expansion of the Kramers-Gaunt g-factor.
	www.cpc.cs.qub.ac.uk /summaries/ACQD_v1_0.html (298 words)

	Carrier recombination and generation
		Recombination of electrons and holes is a process by which both carriers annihilate each other: electrons occupy - through one or multiple steps - the empty state associated with a hole.
		In the case of radiative recombination, this energy is emitted in the form of a photon.
		Recombination in a depletion region and in situations where the hole and electron density are close to each other cannot be described with the simple model and the more elaborate expressions for the individual recombination mechanisms must be used.
	ece-www.colorado.edu /~bart/ecen3320/newbook/chapter2/ch2_8.htm (1474 words)

	Lasma Stars (1995)
		The three body recombination rate varies with the square of the electron density, it is thus more important at higher plasma densities; while on the other hand the radiative recombination rate varies only linearly with electron density.
		Therefore the three body recombination rate dominates at the higher electron densities while the radiative recombination rate dominates for intermediate densities, while the spontaneous decay rate is independent of electron density and dominates at the extremely low densities; (i.e.
		Radiative recombination into the upper levels is usually weaker than into the lower levels (A32 < A31), this selectivity works againsts the strong over-population mechanism.
	laserstars.org /T1995/recombination.html (2665 words)

	Text of MIJ-NSR Volume 5, Article 1
		[9] recently proposed that the radiative recombination in Nichia devices could be described as a transition between the density of states tail of the valence and conduction bands.
		First, the presence of spatial indium fluctuations in the layer improves the radiative recombination efficiency due to an increased localization of the excitons [10].
		Finally, the energy of recombination or "color" of the emission is less sensitive to the excitation power or "brightness" of the device than for a device based on the piezoelectric field mechanism.
	nsr.mij.mrs.org /5/1/text.html (2790 words)

	Carrier generation and recombination - Wikipedia, the free encyclopedia
		Carrier generation and recombination processes are fundamental to the operation of many optoelectronic semiconductor devices, such as photodiodes, LEDs and laser diodes.
		Carrier generation and recombination result from interaction between electrons and other carriers, or with the lattice of the material, or with optical photons.
		During radiative recombination, a form of spontaneous emission, a photon is emitted with the wavelength corresponding to the energy released.
	en.wikipedia.org /wiki/Carrier_generation_and_recombination (736 words)

	Thermal Equilibrium
		We treat heating and cooling by calculating the rate of removal or addition of energy to local radiation field associated with each of the processes affecting level populations (this is in contrast to the method where these were calculated via their effects on the electron thermal bath as in KM82).
		Cooling due to recombination and radiative deexcitation is included only for the escaping fraction, as described elsewhere in this section.
		The cooling rate due to radiative recombination is calculated by explicitly evaluating the quadrature over the recombination continuum spectrum for each recombining level, weighted by the escape fraction for that transition.
	heasarc.gsfc.nasa.gov /xstar/docs/html/node105.html (335 words)

	Radiative Transitions
		There are three radiative transitions that are important in semiconductor lasers that occur between the conduction and valence bands of the material.
		Radiative recombination processes: a) absoprtion, b) spontaneous emission, c) stimulated emission.
		A second radiative process, spontaneous emission is shown Figure 1.
	britneyspears.ac /physics/radiative/radiative.htm (642 words)

	Radiative Electron-Ion Recombination at Low Energies
		In the most common case of ions with one or several electrons still bound, the recombination cross section as a function of the collision energy is governed by resonances due to dielectronic recombination (DR), whose strengths and energetic positions depend on the detailed ionic level structure of each case under consideration.
		Here, recombination mostly proceeds by the much simpler non-resonant process of radiative recombination (RR); however, as the slow electrons can be strongly influenced by other surrounding charged particles of by external fields, the attention focuses on unusual properties of the single-electron dynamics involved in the capture process.
		recombination spectrum at 10 meV, which yields an in-situ thermometer for the irregular motion in the electron and the ion beam.
	www.mpi-hd.mpg.de /ato/jb00_html/node4.html (861 words)

	plasma
		Radiative recombination gives rise to a continuum of emission, with a minimum energy equal to the binding energy of the ion in its final state.
		Given the photoionization cross section, the ionization energy, and the statistical weights of the levels involved it is trivial to use Equation (22) to calculate the emission due to radiative recombination.
		The maximum radiative RRC occurs near the ionization energy of the level, since that is where the cross section tends to be large and because of the exponential damping term (see Eq.
	cxc.harvard.edu /atomdb/physics/plasma/plasma.html (2790 words)

	Centre for Photovoltaic Engineering, UNSW: Thin-Film Gallium Arsenide Solar Cells
		At high excess carrier concentrations, the total recombination rate is dominated by Auger-recombination while Shockley-Read-Hall recombination and surface recombination dominate the total recombination process at low excess carrier concentrations.
		One aim of the recent work in the area of light emission from bulk silicon was to theoretically describe and to understand the dependence of the EQE on the excess carrier concentration Δn quantitatively.
		The rate of radiative recombination in silicon is described via the radiative recombination coefficient B(T).
	www.pv.unsw.edu.au /research/siliconphotonics_Radiative.asp (444 words)

	Tokamak Plasma Spectroscopy at LLNL (Site not responding. Last check: 2007-11-02)
		The reason for the observed discrepancies is the poor quality of the recombination data used as well as the neglect of the indirect ionization process, excitation autoionization in the plasma modeling code.
		The large bump in the experimental data at the outermost radii (coldest temperatures) is due to radiative losses from intrinsic oxygen; aside from oxygen, molybdenum is the overwhelmingly dominant impurity species in the plasma.
		The radial drift velocity has the advantage that it does not depend on the absolute amount of Mo present and thus is independent of the absolute calibration of the RCS.
	www-phys.llnl.gov /Research/Tokamak (8969 words)

	Solar Radiative Recombination Spectrum (Site not responding. Last check: 2007-11-02)
		The dashed curve (which is shown here displaced upwards by 8 orders of magnitude) gives the cascade emission if no radiative enhancement due to level broadening by plasma field fluctuations is assumed.
		It is evident that for these parameters (which are generally assumed to be appropriate for the solar photosphere) the theoretical curve is not consistent with the observed solar spectrum as the former becomes discrete for infrared and shorter wavelenghts.
		The overall theoretical radiation excess could be explained by the neglection of radiative transfer effects for the present model.
	www.plasmaphysics.org.uk /research/solspec.htm (196 words)

	The Electron Beam Ion Trap at Berkeley Lab
		In radiative recombination, an electron is captured into a vacant orbital of the ion, emitting a photon whose energy is equal to the sum of the electron's initial kinetic energy and the binding energy of the state to which it is captured.
		In dielectronic recombination, an electron is captured, just as in radiative recombination, but instead of emitting a photon, another electron already in the ion is excited.
		The resulting doubly-excited intermediate state decays radiatively; that is, by emission of a photon.
	www-ebit.lbl.gov /e_ion.php (372 words)

	Radiative recombination (Site not responding. Last check: 2007-11-02)
		Radiative recombination is the process by which an ion in state-i binds an electron from the electron sea to produce state-(i-1) with the subsequent radiation of photons.
		The effects of radiative recombination on the thermal structure of the plasma are not straightforward to determine.
		However, recombination acts to remove the low-energy particles from the electron sea since ions preferentially recombine with low-energy electrons.
	www.astro.umd.edu /~chris/publications/thesis/node147.html (202 words)

	Oxygen atom Rydberg emission in the equatorial ionosphere from radiative recombination
		As the atmosphere is optically thin for the quintet transitions, corrections for radiative scattering are not necessary, and relative agreement between theory and observations is excellent.
		We argue that the cause is Bowen fluorescence, a consequence of photoexcitation of the OI 3d-2p transition by H Lyman-β radiation in the geocorona.
		The fact that so many of the oxygen Rydberg lines have been identified in this study and that their intensities are consistent with cascade models of radiative recombination is a strong confirmation of the importance of this process in the tropical nightglow near solar maximum.
	www.agu.org /pubs/crossref/2004/2004JA010556.shtml (486 words)

	Probing radiative recombination in semiconductor nanocrystals with cavity QED (Site not responding. Last check: 2007-11-02)
		In this paper, we report studies of radiative recombination in core/shell nanocrystals using an experimental approach based on cavity QED and the fact that only radiative processes are affected by modifications in vacuum fluctuations.
		We single out radiative processes from the complex decay dynamics in time-resolved PL by embedding nanocrystals in an optical microresonator and by comparing time-resolved PL obtained at energies resonant and off-resonant with relevant resonator modes.
		The relatively short radiative lifetime further indicates that a significant fraction of the PL arises from intrinsic dipole-allowed radiative recombination in nanocrystals.
	flux.aps.org /meetings/YR00/MAR00/abs/S7150110.html (182 words)

	Britney Spears guide to Semiconductor Physics: Glossary of Terms
		The energy released by a recombining electron is immediately absorbed by another electron which then dissipates the energy by emitting phonons.
		Electron-Hole Recombination - a process in which a hole is recombined with an electron within a doped semiconductor, accompanied by a release of energy, typically in the form of radiation.
		Recombination Radiation - the electromagnetic radiation released when a conduction electron recombines with a hole in the valence band of a semiconductor.
	britneyspears.ac /physics/lipgloss/gloss.htm (3879 words)

	Experimental Detection of Surface Nonradiative Surface Recombination in InGaAlP
		A Light Emitting Diode is a semiconductor device that produces light via spontaneous radiative recombination of electron-hole pairs.
		One of the important issues in LED technology is the study of the effect of surface recombination that adds up to the other recombination processes present in the device.
		Then, the carriers created recombine by emitting a photon whose energy is close to the bandgap energy of the material.
	www.ee.ucla.edu /~ialva/Research/etching_InGaAlP.html (903 words)

	Dielectronic Recombination in Photoionized Gas
		Also, the radiative recombination continuum (RRC) of an ion is predicted to appear as a distinct narrow feature just above the ionization threshold of the ion (Hatchett, Buff, and McCray 1976).
		Recombined ions are separated from the circulating ion beam by the first dipole magnet downstream of the cooler and are detected using a fast scintillator, heavy-ion detector with a detection efficiency of more than 95% (Miersch et al.
		Recombination due to charge transfer off residual gas in TSR is taken into account by subtracting a constant such that the background level at 134 eV matches the very low theoretical RR rate at that energy (Lampert et al.
	ecf.hq.eso.org /~ralbrech/novdec97apjl/975499.html (3317 words)

	Tuzemen (Site not responding. Last check: 2007-11-02)
		Therefore, recombination types and mechanisms play important roles in the quantum efficiency and other characteristics of the devices.
		It is also important that recombination centers are uniformly distributed across wafers where the devices are constructed.
		The project that Dr. Tüzemen is undertaking at Wake Forest involves i) Recognition of non-radiative recombination centers and the mechanisms by which non-radiative recombination occurs in III-V materials.
	www.wfu.edu /physics/news/f2000/tuzeman/tuzeman.html (309 words)

	Recombination in Semiconductors - Cambridge University Press
		It is the first book to deal exclusively and comprehensively with the subject, and as such is a self-contained volume, introducing the concepts and mechanisms of recombination from a fundamental point of view.
		Following initial chapters on semiconductor statistics and recombination statistics, the text moves on to examine the main recombination mechanisms: Auger effects, impact ionisation, radiative recombination, defect and multiphonon recombination.
		Recombination in low-dimensional semiconductor structures R. Taylor; References; Name index; Index of topics, concepts and materials.
	www.cambridge.org /catalogue/catalogue.asp?isbn=0521543436 (269 words)

	Semiconductor Technology Research, Inc. (Site not responding. Last check: 2007-11-02)
		Along with bimolecular radiative electron and hole recombination, an original model of non-radiative carrier recombination on threading dislocation cores is incorporated into the SiLENSe code.
		The latter allows analyzing the interplay between the radiative and non-radiative recombination channels and predicting the internal emission efficiency of the LED structure as a function of threading dislocation density.
		The spectrum of light emission from a single- or multiple-quantum-well active region is calculated with account of the complex valence band structure of wurtzite semiconductors by using the 8×8 Kane Hamiltonian.
	www.semitech.us /products/SiLENSe (817 words)

	[No title]
		After the invention of the maser (microwave amplification by stimulated emission of radiation) in 1954 by Townes and his collaborators and the subsequent operation of optical masers and lasers (l replacing m, representing light) in ruby, semiconductors were suggested for use as laser material.
		Thus for band-to-band recombination to occur in an indirect semiconductor, the emission of a photon must be accompanied by the absorption of a phonon.
		At this thickness, the carrier confinement effect is increased, which results in a high rate of radiative recombination due to the high-injected carrier density and the uniform distribution of the injected carrier.
	www.eng.yale.edu /pjk/EESrProj_02/doan_rpt_partI.doc (4217 words)

	[61.02] Accurate Radiative Recombination Coefficients for Helium (Site not responding. Last check: 2007-11-02)
		is measured from ratios of intensities of He{\sc I} and H{\sc I} recombination lines in H{\sc II}~Regions.
		We report the results of a recalculation of the He{\sc I} recombination process at a temperature of 10,000~K in the "Case~B" approximation.
		Our work builds on previous calculations by improving the physical treatment of radiative recombination and subsequent cascades by explicitly including fine structure in the helium transition rates and energies.
	www.aas.org /publications/baas/v36n2/aas204/683.htm (245 words)

	Model for radiative recombination in high-purity amorphous silicon dioxide during x-irradiation.
		Model for radiative recombination in high-purity amorphous silicon dioxide during x-irradiation.
		In this model, the excited vibronic term of the defect has a double-well dependence on the reaction coordinate, and its ``center of gravity'' is slightly displaced relative to the ground state of the defect.
		The quantitative connection between the proposed mechanism of radiative electron-hole recombination and the self-trapped exciton mechanism of defect production in a\rm -SiO _2 under x- irradiation will be discussed.
	flux.aps.org /meetings/BAPSMAR95/abs/SR1310.html (134 words)

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