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Topic: Reactive Ion Etching

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	Plasma physics -- Facts, Info, and Encyclopedia article (Site not responding. Last check: 2007-10-21)
		The ion density is related to this by the average charge state of the ions through.
		ion gyrofrequency, the angular frequency of the circular motion of an ion in the plane perpendicular to the magnetic field:
		ion gyroradius, the radius of the circular motion of an ion in the plane perpendicular to the magnetic field:
	www.absoluteastronomy.com /encyclopedia/p/pl/plasma_physics.htm (1541 words)

	Plasma
		In physics and chemistry, plasma (also called an ionized gas) is an energetic state of matter in which some or all of the electrons in the outer atomic orbitals have become separated from the atom.
		This state of matter was first identified by Sir William Crookes in 1879, and dubbed "plasma" by Irving Langmuir.
		A cold plasma is one where only a small fraction of the atoms in a gas are ionized, and the electrons reach a very high temperature, whereas the ions remain at the ambient temperature.
	www.brainyencyclopedia.com /encyclopedia/p/pl/plasma.html (540 words)

	Plasma Article, Plasma Information (Site not responding. Last check: 2007-10-21)
		Full ionizationtakes place, and the ions and the electrons are in thermalequilibrium.
		A cold plasma is one where only a smallfraction of the atoms in a gas are ionized, and the electrons reach a very high temperature, whereas the ions remain at theambient temperature.
		The electric field is either capacitively or inductively coupled into the gas bymeans of a plasma source eg microwaves.
	www.anoca.org /plasmas/matter/plasma.html (547 words)

	the Nanoscale Physics Research Laboratory
		Photon stimulated ion desorption from a polyatomic molecule in the VUV: C
		Negative ion resonances in vibrational excitation and photochemistry of chemisorbed molecules: a critical case study of O
		Transient negative ions in the spectroscopy and dynamics of molecules on surfaces: orientational effects
	www.nprl.bham.ac.uk /publications (5024 words)

	ITTC Publications
		RIE Initiation Delay in BCI3/SF6/Ar Plasmas Due to Native Oxide Removal in NH4OH/H2O,
		Smooth and Anisotropic Reactive Ion Etching of GaAs Slot Vias for Monolithic Microwave Integrated Circuits Using CI2/BCI3/Ar Plasmas,
		Please send comments and questions to the webmaster.
	www.ittc.ku.edu /publications/index.phtml?year=1999 (2065 words)

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