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Topic: Schottky Effect

	World Intellectual Property Organization (Site not responding. Last check: 2007-10-06)
		In a specific embodiment, the width of the trench is adjusted such that depletion in the drift region of the Schottky is influenced and controlled by the adjacent MOS structure to increase the reverse voltage capability of the Schottky diode.
		In this embodiment, the polysilicon in trenches 200-3 and 200-4 connects to the gate polysilicon (206) of the trench MOSFET and is therefore similarly driven.
		To improve the Schottky performance, in a preferred embodiment, the trench width can be modified in the Schottky regions to reduce W. This is shown in Figure 7B where the trenches in the interspersed Schottky structure widen to reduce the width of the mesa resulting in a smaller W for the Schottky diodes.
	www.wipo.int /ipdl/IPDL-CIMAGES/view/pct/getbykey5?KEY=00/51167.010614&ELEMENT_SET=DECL (2725 words)

	Vacuum Tubes
		he Edison effect, the appearance of an electric current flowing between a heated cathode and an anode in an evacuated tube, was a mysterious phenomenon when it was discovered in 1882; it was not understood how electric current could pass through a vacuum.
		Schottky was Swiss, but he was educated and spent his professional career in Germany.
		He was the first to note the existence of "holes" in the band structure of semiconductors, discovered the type of lattice vacancy known as the Schottky defect, and in 1938 created a theory that explained rectification at a metal/semiconductor interface.
	www.ee.umd.edu /~taylor/Electrons3.htm (639 words)

	[No title] (Site not responding. Last check: 2007-10-06)
		] A contribution to the heat capacity of a solid arising from the thermal population of discrete energy levels as the temperature is raised; the effect is particularly prominent at low temperatures.
		A defect in an ionic crystal consisting of the smallest number of positive-ion vacancies and negative-ion vacancies which leave the crystal electrically neutral.
		] A transistor-transistor logic circuit in which a Schottky diode with forward diode voltage is placed across the base-collector junction of the output transistor in order to improve the speed of the circuit.
	www.accessscience.com /Dictionary/S/S8/DictS8.html (2537 words)

	PHYS 319: The Transmission Electron Microscope
		Effect of condenser-lens astigmatism on TEM illumination which is (a) underfocused, (b) fully-focussed and (c) overfocused.
		Effect of condenser stigmator with (d) correct orientation (for overfocus condition) but maximum amplitude; (e) correct orientation and amplitude: note that the diameter of illumination is smaller than (b).
		The effect is analogous to phenomena which occur in light optics: an illuminated but opaque screen containing a small hole does not cast a sharp shadow of the hole on a white screen placed behind it.
	laser.phys.ualberta.ca /~egerton/TEMcolum/temcolum.htm (7580 words)

	Schottky
		Schottky barrier A Schottky barrier is a voltage, and decreased (almost nonexistent) depletion width in the metal.
		Schottky diode The Schottky diode (named after German physicist lead-acid batteries.
		Walter H. Schottky Walter H. Schottky (1938, Schottky formulated a theory predicting the Schottky effect, now used in S...
	www.brainyencyclopedia.com /topics/schottky.html (57 words)

	Siemens-Archiv (Site not responding. Last check: 2007-10-06)
		The invention of the screen grid tube and the tetrode, the theory of shot noise (Schottky effect) and the invention of the superheterodyne receiver are all Schottky's work, the outcome of his research from 1915 to 1919 as a scientist in the Weak Current Cable Laboratory of Siemens and Halske.
		After teaching at the universities of Würzburg and Rostock, Schottky worked again in the research laboratory of Siemens and Halske and the Siemens-Schuckertwerke in Berlin and Pretzfeld from 1927 to 1951.
		Among Schottky's major achievements was the development of a theory (1938) which explained the rectifying behavior of a metal-semiconductor contact as dependent on a barrier layer at the surface of contact between the two materials, and revolutionized semiconductor technology.
	w4.siemens.de /archiv/en/persoenlichkeiten/wissenschaftler/schottky.html (176 words)

	results
		Concerning theoretical results, I have derived general expressions for the Schottky barrier height [8] and for the capacitance-voltage characteristics of Schottky junctions with changing doping level near the interface [6,11].
		I have analysed the effect of the metal, interface and semiconductor parameters on the Schottky barrier height [9], the lateral inhomogeneity of barrier height [14[ and its effect on the current-voltage characteristics [17], the temperature dependence of the barrier height [16], and that of the capacitance-voltage characteristics proposing a new plot [20].
		Anomalous thermionic-field emission in epitaxial Al/n-AlGaAs Schottky junctions
	www.mfa.kfki.hu /~horvzsj/results.htm (683 words)

	Paradigm Shift in Planar Power MOSFET Technology
		Due to the short time duration of the dead time when the Schottky diode is conducting the inductor current, the common practice is to use a Schottky diode rated at one-quarter of the current flowing through the inductor.
		It has been suggested that the Schottky diode be co-packaged with the sync FET to overcome this problem, but the space occupied by the diode prevents the minimization of the on-resistance of the sync FET — leading to poor efficiency.
		The transfer of current between the MOSFET and the Schottky diode is impeded by the presence of the stray inductance in the packages and the circuit board.
	powerelectronics.com /mag/power_paradigm_shift_planar (2311 words)

	MIJ-NSR Volume 1, Article 41
		The metal-induced gap states (MIGS) model predicts the barrier heights of ideal Schottky contacts on a given semiconductor to be linearly correlated with the electronegativities of the metals.
		He calculated effective barrier heights and ideality factors of such patchy contacts as a function of the shape and size of the inhomogeneities and the deviations of their barrier heights from the value of the homogenous interface.
		The barrier height of homogeneous metal-semiconductor contacts are lowered and become voltage-dependent due to the image-force or Schottky effect.
	nsr.mij.mrs.org /1/41/complete.html (1821 words)

	Schottky, Walter -- Encyclopædia Britannica
		Schottky obtained doctorates in engineering, technology, and natural sciences from the University of Berlin, where he conducted research under Max Planck.
		More results on "Schottky, Walter" when you join.
		Such a diode is one that has a metal-semiconductor contact (e.g., an aluminum layer in intimate contact with an n-type silicon substrate).
	www.britannica.com /eb/article?tocId=9002139&query=null&ct=null (698 words)

	Energy Citations Database (ECD) - Energy and Energy-Related Bibliographic Citations
		Schottky effect model of electrical activity of metallic precipitates in silicon
		A quantitative model of the electrical activity of metallic precipitates in Si is formulated with an emphasis on the Schottky junction effects of the precipitate-Si system.
		Carrier recombination is attributed to the thermionic emission mechanism of charge transport across the Schottky junction rather than the surface recombination.
	www.osti.gov /energycitations/product.biblio.jsp?osti_id=20216733 (249 words)

	Schottky, Walter -- Encyclopædia Britannica
		It is named for the German physicist Walter H. Schottky, who in 1938 explained the rectifying behaviour of this kind of contact.
		The Schottky diode is electrically similar to a p-n junction, though the current flow in the diode is due...
		Biography of this Australian-born scientist awarded the Nobel Prize in Medicine or Physiology, in 1945, for the discovery of penicillin and its curative effects.
	www.britannica.com /eb/article?tocId=9002139&query=null&ct=null (698 words)

	Photoelectron Emission (Site not responding. Last check: 2007-10-06)
		Photoelectron emission is measured by applying a voltage between the specimen (cathode) and another electrode, called the collector or anode, and measuring the current.
		If the anode is positive, the photoelectron current saturates (except for the Schottky effect, see notes on thermionic emission).
		Thermal effects cause some electrons to exist above the Fermi level, so the threshold becomes rounded, but this effect can be taken into account with a corrected Fowler expression.
	www.virginia.edu /ep/SurfaceScience/PEE.html (1134 words)

	[ODCAD] Schottky Effect: Junction with Organic Semiconductor (Site not responding. Last check: 2007-10-06)
		When field is at medium strength and the device is at junction control, one factor in device model is Schottky effect.
		This effect reduces energy barrier for charge carrier injection from the electrode.
		Compared with Si material, Schottky effect is much stronger for organic semiconductor.
	www.lns.cornell.edu /spr/2004-04/msg0060397.html (322 words)

	Human Resources
		Although the Schottky effect is not small, we will ignore it in the following discussion since the general ideas of tunneling can be presented without including it.
		The basic design of the STM has a probe positioned on a mount which can be moved in the x, y, and z directions by means of the piezoelectric effect.
		Certain crystals, such as quartz, exhibit the piezoelectric effect, meaning that they change shape when a voltage is applied on opposite sides of the crystal.
	www-rohan.sdsu.edu /~dpullman/stm/stm3.html (4084 words)

	Semiconductor OneSource: Semiconductor Hall Of Fame
		FRENKEL, Jakov, 1894 (Russia) - 1952; Explanation of the effect of crystallographic defects on the properties of solids.
		SCHOTTKY, Walter 1886 (Zurich, Switzerland) — 1976 — Discoveries of fundamental effects in semiconductors (e.g.
		Schottky effect) and development of devices (Schottky diode).
	www.semiconductorhof.com /shof (989 words)

	The Chip Collection - Chip Talk - Historical - Smithsonian Institution
		Low-power Schottky Transistor Transistor Logic, the power dissipation of LS TTL is typically 1/5th that of conventional TTL.
		A form of TTL logic in which Schottky diodes are used to clamp the transistors out of saturation, effectively eliminating the storage of charge within the transistor...
		A form of TTL logic in which Schottky diodes are used to clamp the transistors out of saturation, effectively eliminating the storage of charge within the transistor allowing increased switching speeds.
	smithsonianchips.si.edu /chiptalk/vocab.htm (2035 words)

	Thermionic Emission (Site not responding. Last check: 2007-10-06)
		That means that not only the electrons must be in the tail of the energy distribution to be emitted, but they also must be traveling nearly perpendicular to the surface.
		The decrease of the barrier is proportional to the square root of the field F. The modified equation is:
		The lowering of the barrier due to the electric field is called the Schottky effect.
	www.virginia.edu /ep/SurfaceScience/thermion.html (849 words)

	Jackson's Electronics Research Group (Site not responding. Last check: 2007-10-06)
		In this device structure, carriers traveling from the source to the drain contact must pass from the source contact through the highly resistive a-6T material to the underlying conductive channel and then from the channel through the highly resistive material to the drain contact.
		Since any space charge limited current effects should be similar for all devices this nonlinearity may indicate the presence of a barrier at the metal-semiconductor interface.
		However, it is a useful first step to investigate the effect of doping on contacts to a-6T.
	jerg.ee.psu.edu /Publications/1996/Lin-1996-1 (1654 words)

	Thulium Links (Site not responding. Last check: 2007-10-06)
		Effect of magnetic field on the Schottky effect in Thulium
		Using a two-levels Schottky model for C_N, a ground state energy splitting of 8.2 10 ^-6 eV and a degeneracy ratio of 1.28 were estimated for thulium.
		Researchers at the University of Oregon recently crammed a record-breaking amount of electronic data onto a crystal laced with thulium atoms.
	www.digitalbanff.com /thulium/thullinks.html (148 words)

	Semiconductor and Electronic Devices
		The electrical performance of a device is effected by the junctions present.
		This junction and the dipole are different from p-n or Schottky junction in terms of size and field.
		For hole injection from the junction into the organic layer, the energy barrier is increased by that amount, while the energy barrier is reduced by that amount for electron injection.
	semiconductors.blogspot.com (1338 words)

	MIJ-NSR Volume 1, Article 41
		However, a linear correlation between both quantities was observed for Ag/S/n-GaAs(001) [14], Ag/n-Si(111)-"7×7", Ag/n-Si(111)-1×1 [15], Ag/n-Si(111):H-1×1 [16], Pb/H:p-Si(111) and Pb/n-Si(111) Schottky diodes [8].
		Mönch [23] analyzed these data and found the energy position of the CNL with regard to the valence band maximum to be the same with both SiC polytypes.Therefore, the positions of the CNLs in β- and α-GaN with regard to the valence band maximum are also assumed to be identical.
		Zero-bias barrier heights of Ag- and Pb/n-α-GaN Schottky diodes as a function of the respective ideality factor.
	nsr.mij.mrs.org /1/41/complete.utf.html (1864 words)

	Investigation of electrical properties of organic Schottky diodes using MgPc
		Investigation of electrical properties of organic Schottky diodes using MgPc—the effect of oxygen absorption and post deposition annealing
		The reverse bias curves were interpreted in terms of a transition from the electrode-limited Schottky emission to the bulk-limited Poole–Frenkel effect.
		The Schottky barrier parameters of oxygen-doped and annealed structures along with the as-deposited samples were determined from the C
	stacks.iop.org /0268-1242/20/464 (359 words)

	RC Groups - Which Shotky Diode?
		Mr Schottky would prefer his name spelt right too
		Walter Schottky German scientist: Schottky effect, Schottky barrier, Schottky contact, Schottky diode.
		"Walter Schottky This German scientist's name is embedded in solid-state physics (Schottky effect, Schottky barrier, Schottky contact, Schottky diode).
	www.rcgroups.com /forums/showthread.php?t=240549 (328 words)

	ATFPUBS (Site not responding. Last check: 2007-10-06)
		The electron beam bunch length and the charge distribution within the bunch were measured by varying the second section linac RF phase, (one degree corresponds to 970 fs) and measuring the charge past the momentum slit.
		The charge variation with the RF gun phase is dominated by the Schottky effect in the strong electric field at the cathode [11].
		However the compression reduces with the increase field at a given RF phase as the beam becomes relativistic in a shorter time.
	www.bnl.gov /atf/publications/bunch.htm (1907 words)

	[No title]
		This uses the Schottky effect: a thin film of a metal such as gold or palladium is deposited on the chip creating a diode effect which can be seen with the electron beam.
		Many of these copier traps are based on holes in isolating layers or on tricks done in the diffusion layer with ion implantation (based on the assumption that it is hard to distinguish N from P).
		Thus the effect of current silicon level copy traps is just to slow down the attacker.
	www.insecure.org /stf/tamperproof_smartcards.txt (3117 words)

	hpconf
		The effect of the annealing on the interface state energy distribution and the relative interfacial layer thickness in GaAs-Au Schottky contacts evaluated from the I-V characteristics
		Effect of lateral inhomogeneity of barrier height on the photoresponse characteristics of Schottky junctions
		Effect of neutron bombardment on the electrical characteristics of n-GaAs
	www.mfa.kfki.hu /~horvzsj/hpconf.htm (1923 words)

	Interface and Junction (Site not responding. Last check: 2007-10-06)
		Work function of metal has effect on this dipole.
		Another factor that has effect to this dipole is organic material.
		However, there is no clear rule for the dependence of the dipole on the organic material.
	www.odcad.com /ChangingContents/DevicePhysics/InterfaceJunction/DevicePhysics_InterfaceJunction.html (254 words)

	LOWVOLTAGEARC
		In most cases, the charged particles emitted from the cathode in the arc mode have a negligible effect on the state of a quasi-neutral plasma near the boundary to the space charge zone.
		This is the anomalous Schottky effect described in Chapter 2.
		The effect of the non-equilibrium character of the electron distribution function on the rate of ionization in a TIC is also illustrated by Fig.
	www.geocities.com /gary23428/LowTemperature/LOWVOLTAGEARC.htm (8212 words)

	ECE 497HR - ECE Problems: Novel Carbon-Based NEMS, Quantum and Electric Devices
		The fundamentals of electrical engineering of such natural nanostructures as biological ion channels, nanotubes and nanowires will be presented.
		It will be demonstrated how the unique structural and electronic properties of low-dimensional graphite-like materials can be employed in creating non-conventional electronic devices, sensors and electromechanical systems, including quantum nanowires, nanocapacitors, Schottky Field-Effect transistors, single-electron transistors; chemical gas sensors, bio-sensors; nanoswitches, nanomanipulators, standards for nano-metrology, and memory elements.
		The simulation methods that are widely used in computational electronics will be applied to simulation of the biological ion channels.
	www.ece.uiuc.edu /courses/coursedes.asp?598HR (189 words)

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