| | Semiconductor photo detector containing crystalline amplification layer - Patent 5847418 (Site not responding. Last check: 2007-10-31) |
 | | A semiconductor photo detector according to claim 3, which is constructed so that the energy value of the conduction band of said photo carriers in said barrier layer shows a monotonous decrease toward the advancing direction of said photo carriers at the time when drive voltage is applied between said pair of electrodes. |
 | | The semiconductor photo detector according to this invention is formed by stacking a lower electrode 2, an amplification layer 3, an optical absorption layer 4 and a upper electrode 5 one after another on an insulating substrate 1. |
 | | The semiconductor photo detector according to this embodiment is fabricated by stacking a lower electrode 12, an optical absorption layer 13, an amplification layer 14 and an upper electrode 15 one after another on an insulating substrate 11. |
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