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Topic: Semiconductor device fabrication

	Semiconductor device - Wikipedia, the free encyclopedia
		Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide.
		Semiconductor devices are available as single discrete devices or as components of an integrated circuit (IC), which consists of a large number–from hundreds to millions–of devices manufactured onto a single semiconductor substrate.
		The semiconductor material used in devices is doped under highly controlled conditions in a "fab" to precisely control the location and concentration of p- and n-type dopants.
	en.wikipedia.org /wiki/Semiconductor_device (2569 words)

	Semiconductor fabrication - Wikipedia, the free encyclopedia
		Semiconductor device fabrication is the process used to create chips, the integrated circuits that are present in everyday electrical and electronic devices.
		The workers in a semiconductor fabrication facility are required to wear cleanroom suits to protect the devices from human contamination.
		In an effort to increase profits, semiconductor device manufacture spread from Texas and California in the 1960s to the rest of the world, such as Japan, Taiwan, Korea, Singapore and China, and is a global business today.
	en.wikipedia.org /wiki/Semiconductor_device_fabrication (726 words)

	Integrated circuit - Encyclopedia.WorldSearch (Site not responding. Last check: 2007-11-07)
		The integrated circuit was made possible by mid-20th-century technology advancements in semiconductor device fabrication and experimental discoveries that showed that semiconductor devices could perform the functions performed by vacuum tubes at the time.
		The semiconductors of the periodic table of the chemical elements were identified as the most likely materials for a solid state vacuum tube by researchers like William Shockley at Bell Laboratories starting in the 1930s.
		The layers of material are fabricated in very close analogy to a photographic process, although light waves in the visible spectrum can no longer be used to "expose" a layer of material, as they would too large for the features.
	encyclopedia.worldsearch.com /integrated_circuit.htm (2143 words)

	United States Patent Application: 0030017652
		A method of fabricating a semiconductor device according to claim 1, further comprising the steps of mounting said semiconductor chip on a heat stage and attaching a lead to said electrode of said semiconductor chip through a bump by thermal crimping.
		A method of fabricating a semiconductor device according to claim 2, further comprising the steps of mounting said semiconductor chip on a heat stage and creating a bump on said electrode of said semiconductor chip by using a wire bonding technique.
		The thickness of the semiconductor substrate 1A exhibits a trend of decreasing with a reduced thickness of the TCP-type semiconductor device 10.
	appft1.uspto.gov /netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=/netahtml/PTO/srchnum.html&r=1&f=G&l=50&s1='20030017652'.PGNR.&OS=DN/20030017652&RS= (9115 words)

	Learn more about Semiconductor in the online encyclopedia. (Site not responding. Last check: 2007-11-07)
		Semiconductors are materials with electrical conductivities that are intermediate between those of conductorss and insulators.
		Semiconductors are useful for electronic purposes because they can carry an electric current by electron propagation or hole propagation, and because this current is generally uni-directional and the amount of current may be influenced by an external agent (see diode, transistor, amplifier etc.).
		An extrinsic semiconductor is a semiconductor that has been doped with various impurities to modify the number of holes and excited electrons.
	www.onlineencyclopedia.org /s/se/semiconductor.html (1327 words)

	World Intellectual Property Organization (Site not responding. Last check: 2007-11-07)
		Semiconductor Device Fabrication using a Photomask Designed Using Modeling and Empirical Testing FIELD OF THE INVENTION The present invention relates generally to semiconductor devices and photomasks and more particularly to semiconductor device fabrication using a photomask designed using modeling and empirical testing.
		BACKGROUND OF THE INVENTION The manufacture of semiconductor devices is heavily dependent on the accurate replication of computer-aided-design (CAD) generated patterns onto the surface of a device substrate.
		Figure 1A illustrates a pattern 10 that is to be transferred to a semiconductor wafer 100 using photolithographic techniques, as illustrated by Figure 1 B. For example, the elements 11-15 might all be polysilicon lines that are to be formed on the surface of the semiconductor device.
	www.wipo.int /ipdl/IPDL-CIMAGES/view/pct/getbykey5?KEY=01/84237.011108&ELEMENT_SET=DECL (3326 words)

	Semiconductor device fabrication (Site not responding. Last check: 2007-11-07)
		Semiconductor device fabrication is a multiple-step sequence of predominantly chemical processing steps to create chips used in everyday electrical and electronic devices.
		Silicon is the most common semiconductor used today, although gallium arsenide, germanium, and many other materials are used in special applications.
		To create the standard silicon-based chips that are used in most computers, raw silicon dioxide, which is the most common part of sand or glass, is heated in the presence of hydrogen to produce pure silicon and water which is extracted.
	www.sciencedaily.com /encyclopedia/semiconductor_device_fabrication (471 words)

	Custom Metal Fabrication (Site not responding. Last check: 2007-11-07)
		The term is also used for semiconductor device fabrication and non-metal manufacturing.
		Metal fabrication is a value added process that involves the construction of machines and structures from various raw materials.
		The fabric is less coarse and thick than canvas or denim, but owing to its unfinished and undyed appearance, it is still very cheap.
	www.blownspeakers.com /pages3/22/custom-metal-fabrication.html (655 words)

	Native oxide formation technique for Group III-V semiconductor device fabrication that enhances the oxidation rate
		This transformation begins at the edges of these layers, exposed at the sidewalls of the device, and progresses laterally toward the center of the structure, leaving behind stable oxide layers amid the semiconductor layers of the structure.
		The challenge, then, for device designers in search of a material for selective oxidation purposes in Group III-V semiconductor-based device structures has been to find a high aluminum content material that is lattice matched to the substrate on which the devices are based.
		In particular, the technique is applicable to the fabrication of devices that are lattice matched to indium phosphide substrates.
	www.nsa.gov /techtrans/techt00017.cfm (1197 words)

	Integrated circuit (Site not responding. Last check: 2007-11-07)
		Since a CMOS device only draws current on the ''transition'' between boolean algebralogic State (computer science)state/s, CMOS devices are stressed at a much lower level than a bipolar device.
		A RAMmemory device is the most regular type of integrated circuit; the highest density devices are thus memories; but even a microprocessor/ will have memory on the chip.
		ON Semiconductor today announced the expansion of its SMART HotPlug family with the introduction of the NIS5102 high side hot swap protection IC with built-in charge pump and accurate temperature-sensing circuitry.
	www.infothis.com /find/Integrated_circuit (2441 words)

	Process for forming resist masks utilizing O-quinone diazide and pyrene - Patent 4464458 (Site not responding. Last check: 2007-11-07)
		A resist system for semiconductor device fabrication comprised of bottom positive resist layer of a diazoquinone/novolak resist applied to a substrate and overcoated with a like or different diazoquinone/novolak top resist layer which has been sensitized with pyrene and/or its derivatives.
		Another object of this invention is to provide a new and improved resist structure having an enhanced R/Ro ratio where R is the dissolution rate of the exposed resist portion in solvent and Ro is the dissolution rate of unexposed resist portions.
		in semiconductor device fabrication) comprising the steps of forming a first bottom layer of a blanket exposed positive resist on the substrate, and overcoating the bottom resist layer with a top layer of an unexposed positive resist layer containing an aromatic sensitizer such as pyrene or its derivative, such as methyl pyrene.
	www.freepatentsonline.com /4464458.html (2867 words)

	Integrated circuit (Site not responding. Last check: 2007-11-07)
		An integrated circuit (IC) is a thin chip, usually coin-sized or smaller, consisting of thousands or millions of interconnected semiconductor devices, mainly transistors, as well as passive components like resistors.
		The integrated circuit was made possible by mid-twentieth-century technology advancements in semiconductor device fabrication and experimental discoveries that showed that semiconductor devices could perform the functions performed by vacuum tubes at the time.
		The integration of large numbers of tiny transistors onto a small chip was an enormous improvement on the hand assembly of finger-sized vacuum tubes.
	www.sciencedaily.com /encyclopedia/integrated_circuit (1336 words)

	Device Fabrication (Site not responding. Last check: 2007-11-07)
		The MPL is currently engaged in the fabrication of MCT-based infrared detector arrays.
		Currently, the facilities at the Microfabrication Applications Laboratory (MAL), at the Department of Electrical Engineering and Computer Science, is being used for the fabrication of devices.
		This is because the clean room and fabrication facilities of the MPL are currently being renovated.
	www.uic.edu /depts/mplab/equipment/devicefabrication.html (155 words)

	Fabrication, Processing, and Synthesis
		One of the primary reasons why Si has remained the dominant material in semiconductor device fabrication is it's ability to grow a stable oxide that has excellent dielectric properties.
		Although the initial cost of the PBN is higher than that of the immersed filament system, this unique system has a longer filament lifetime, it resides outside of the ion beam and thus prevents contamination, and it emits no optical or thermal radiation that may damage a substrate.
		In order to monitor the progress of samples during fabrication it is necessary to use various types of metrology tools.
	www.ornl.gov /sci/ment/facilities/fabricate.htm (1916 words)

	Development of Diffusion for Semiconductor Device Fabrication
		The diffusion process was one of the most significant early developments in the manufacture and commercial use of semiconductor devices, such as transistors and diodes.
		As is common knowledge, semiconductor devices are made by introducing small amounts of specific dopants at explicit locations and in carefully controlled concentrations.
		For the semiconductor industry, diffusion consists of the dopant atoms migrating into the host semiconductor crystal lattice from a source, usually at the surface, by "stepping" through vacant lattice sites, that is, by a substitutional mode.
	www.smecc.org /development_of_diffusion_for_semiconductor_devices.htm (2124 words)

	Semiconducting Polymers for Multidisciplinary Education
		In EE 422, Polymer Electronics Laboratory, students apply their knowledge of solid state device fabrication and characterization to build and analyze the performance of a solid state device based on a semiconducting polymer.
		First, the fabrication of an inorganic light-emitting diode requires sophisticated and expensive fabrication techniques, which are not readily accessible to undergraduates.
		Organic semiconductors now inhabit a growing subset of the opto-electronics field, and electroluminescent devices are finding applications as light sources such as backlights, indicators and matrix displays [4].
	www.ee.calpoly.edu /~dbraun/papers/MRS00BraunKingsbVanasHH8-4.html (1901 words)

	[No title] (Site not responding. Last check: 2007-11-07)
		2.2 Qualitative and Quantitative Meaning of Fermi Level in a Semiconductor Band [8] The objective of this applet is to familiarize students, both qualitatively and quantitatively, with the relationship between the relative position of the Fermi level in a semiconductor band gap and the electron and hole concentrations in the bands.
		However, using the traditional educational media such as static illustrations, equations, and lectures, it is often difficult to provide the students with the ability to make an immediate association of the position of the Fermi level with the carrier concentrations, and vice versa.
		Since the device fabrication steps often involve the order of a hundred processing steps, it is practically impossible, using text book figures or static graphical images alone, to convey all the involved processing steps in a clear manner.
	jas2.eng.buffalo.edu /papers/mrs96_jme/paper.txt (2238 words)

	ASU NanoLab
		Semiconductor materials and devices; characterization; low-power electronics; defect characterization; measurement, identification, and control of metallic contaminants in semiconductors.
		Wide bandgap compound semiconductor materials, heterostructures, and devices for optoelectronic and electronic applications, including silicon carbide and gallium nitride; optical and electrical characterization of semiconductor materials.
		Semiconductor device theory; transport in semiconductors; semiconductor device modeling (semiclassical and quantum).
	www.eas.asu.edu /nanofab/research/faculty.html (869 words)

	Modeling a Growth Instability in a Stressed Solid (Site not responding. Last check: 2007-11-07)
		Moreover, they provide conclusive proof that the interface instability observed during the growth of crystalline silicon from the amorphous phase is a consequence of the stress effect on the mobility of the interface atoms.
		Growth instabilities due to stress are important in semiconductor device fabrication.
		Future applications include the study of silicon oxidation during semiconductor device fabrication and the investigation of chemical reactions in multiphase condensed matter as a method for synthesizing self-constructing nanostructures.
	www.csm.ornl.gov /PR/SI-SI.html (358 words)

	Development of Electronics Manufacturing Engineering Instructional Materials for ECE Sophomores and Juniors
		Standard ECE undergraduate curricula include a sophhomore-level digital electronics course and a junior-level course in semiconductor devices and materials, both corses emphasizing the electrical physics and circuit behavior of digital and analog solid-state devices and integrated circuits.
		ECE 214 emphasizes digital electronic logic devices and device families such as TTL (transistor-transistor logic), ECL (emitter- coupled logic), NMOS Field-Effect Transistors, and CMOS devices, which are the typical building blocks of modern digital microelectronics circuitry.
		Faculty teaching these sophomore and junior semiconductor electronics courses are normally not experts in electronics manufacturing, and for that reason we ill require considerable assistance from industry in the development of appropriate materials.
	www.ecs.umass.edu /easn/projects/proj8.html (1308 words)

	Integrated circuit - Open Encyclopedia (Site not responding. Last check: 2007-11-07)
		An integrated circuit (IC) is a thin chip consisting of thousands or millions of interconnected semiconductor devices, mainly transistors, as well as passive components like resistors.
		The first integrated circuits were manufactured independently by two scientists: Jack Kilby of Texas Instruments filed a patent for a "Solid Circuit" on February 6, 1958, and Robert Noyce of Fairchild Semiconductor was awarded a patent for a more complex "unitary circuit" on April 25, 1961.
		Noyce credited Kurt Lehovec of Sprague Electric for the principle of dielectric isolation caused by the action of a p-n junction (the diode) as a key concept behind the IC.
	open-encyclopedia.com /Integrated_circuits (1792 words)

	graduate Catalog (Site not responding. Last check: 2007-11-07)
		Study of fundamentals of GaAs devices and logic families; fabrication processes; physical layout for VLSI circuits; interconnection and testing of high speed systems.
		Study of fundamentals and principles of semiconductor material properties with applications to device characterization.
		MOS transistor is characterized both as a switch and a linear device.
	www.ceet.niu.edu /depts/ee/courses/grad_crs.html (1121 words)

	(WO 01/84237) SEMICONDUCTOR DEVICE FABRICATION USING A PHOTOMASK DESIGNED USING MODELING AND EMPIRICAL TESTING (Site not responding. Last check: 2007-11-07)
		(57) A method of fabricating a semiconductor device is outlined in Figure 3.
		An ideal (or desired) pattern of a layer of the semiconductor device is designed (305).
		The photomask can then be used to produce a semiconductor device, such a memory chip or logic chip (350).
	www.wipo.int /ipdl/IPDL-CIMAGES/view/pct/getbykey5?KEY=01/84237.011108 (223 words)

	PreGrant Publication Database Search Results: CCL/438/197 in PGPUB Production Database
		Semiconductor devices having a field effect transistor and methods of fabricating the same
		Semiconductor device having a laterally modulated gate workfunction and method of fabrication
		Semiconductor device and method of fabricating the same
	appft1.uspto.gov /netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&u=/netahtml/PTO/search-adv.html&r=0&p=1&f=S&l=50&Query=CCL/"438/197"&d=PG01 (372 words)

	Compound Semiconductor Device Laboratory
		The Compound Semiconductor Laboratory (CSDL), located within the SFU Physics and Engineering Science Departments, is dedicated to the development of advanced III-V semiconductor devices.
		The CSDL is a world-class facility: indeed, our laboratory is centered in an industrial-quality cleanroom with class 100, and 1,000 areas for device III-V device fabrication.
		The facility is well-equipped with an AB-M deep UV Hg-Xe submicron mask aligner, rapid thermal annealing, cryopumped electron beam and thermal evaporation systems, a two-source sputter deposition system, plasma processing equipment, as well as a JEOL-6400 scanning electron microscope and e-beam lithography tool capable of a 0.15µm resolution.
	www.css.sfu.ca /sites/csdl (333 words)

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