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Topic: Silicon germanium

	Germanium - Wikipedia, the free encyclopedia
		Germanium forms a large number of organometallic compounds and is an important semiconductor material used in transistors.
		Germanium transistors are still used in stompboxes by musicians who wish to reproduce the distinctive character of fuzzboxes from the early Rock and roll era.
		Germanium is obtained commercially from zinc ore processing smelter dust and from the combustion by-products of certain coals.
	en.wikipedia.org /wiki/Germanium (554 words)

	Gersi2.html (Site not responding. Last check: 2007-10-15)
		This article explores the technical choices concerning the use of germanium and silicon as semiconductor materials made by scientists and engineers during the period from 1947, the year the transistor was invented, until 1960 when the design shift from germanium to silicon occurred.
		None of these historians recognizes that the replacement of germanium by silicon was an important event in the history of technology, despite the fact that many scholars consider the transistor as the most pervasive invention of the last half of the twentieth century.
		Germanium device manufacturers were aware of the benefits of thermally grown oxide films but basically were preparing to meet the threat by manufacturing silicon devices because they were unable to develop a stable oxide film for germanium.
	www.stanford.edu /group/mmdd/SiliconValley/Usselman/Gersi2.html (9081 words)

	World Intellectual Property Organization (Site not responding. Last check: 2007-10-15)
		In one embodiment, the SiGe substrate comprises a silicon germanium semiconductorwafer.
		In this typical embodiment, the silicon germanium region may be germanium-doped silicon, or it may be an epitaxial silicon germanium layer.
		In a silicon germanium region, the mole ratio of silicon to germanium may be constant or it may vary spatially.
	www.wipo.int /ipdl/IPDL-CIMAGES/view/pct/getbykey5?KEY=01/09930.010208&ELEMENT_SET=DECL (5107 words)

	[No title] (Site not responding. Last check: 2007-10-15)
		The silicon germanium alloy has the effect of speeding the velocity of electrons flowing through the transistor without generating too much heat.
		To do that silicon germanium chips must first displace gallium arsenide from the position it has established in high-frequency uses where silicon is not appropriate.
		When germanium atoms are forced by epitaxy to take the crystalline structure of silicon, they are subjected to tremendous strain that causes defects in the crystal.
	www.reed-electronics.com /eb-mag/index.asp?layout=articlePrint&articleID=CA68250 (1760 words)

	World Intellectual Property Organization (Site not responding. Last check: 2007-10-15)
		Thereafter, the trench is filled with a low stress silicon nitride that is relatively unaffected during the release of the mechanical structures.
		An anchor material (for example, silicon, silicon nitride, silicon carbide, germanium, silicon/germanium or gallium arsenide) may be deposited in the opening to form the anchor.
		Indeed, in those instances where the insulation material of the SOI substrate is other than the common silicon oxide (for example, the sacrificial layer of the SOI substrate is a silicon nitride), anchors 30a-c may be silicon oxide provided that silicon oxide is relatively unaffected by the process (es) of releasing the mechanical structures.
	www.wipo.int /ipdl/IPDL-CIMAGES/view/pct/getbykey5?KEY=05/17975.050224&ELEMENT_SET=DECL (8554 words)

	Science News: The mod couple: wedding silicon and germanium f... @ HighBeam Research (Site not responding. Last check: 2007-10-15)
		When conducting electrons in silicon drop to a lower-energy, bound state, the excess energy is converted into phonons, or vibrations of the crystal lattice, rather than photons.
		The trouble is that although germanium is chemically compatible with silicon, its crystal structure isn't a good match.
		The presence of germanium accelerated the motion of electrons across the device, boosting the transistor's speed by roughly 60 percent.
	www.highbeam.com /library/doc0.asp?DOCID=1G1:15625836&refid=ip_almanac_hf (1753 words)

	IBM advances chip speeds \| CNET News.com
		Silicon germanium is one of a number of chip innovations that IBM has announced this year.
		While using silicon germanium in highly complex computer chips is several years away, IBM has a lead of at least nine to 12 months over competitors trying to develop silicon germanium technology, Strauss said.
		Silicon germanium's future now hinges on whether the new technology can be integrated into current products at a price the manufacturers are willing to pay, Strauss said.
	news.com.com /2100-1033-216585.html (818 words)

	Silicon and Germanium
		Solid state electronics arises from the unique properties of silicon and germanium, each of which has four valence electrons and which form crystal lattices in which substituted atoms (dopants) can dramatically change the electrical properties.
		In solid state electronics, either pure silicon or germanium may be used as the intrinsic semiconductor which forms the starting point for fabrication.
		Silicon is by far the more widely used semiconductor for electronics, partly because it can be used at much higher temperatures than germanium.
	hyperphysics.phy-astr.gsu.edu /hbase/solids/sili.html (331 words)

	Diamond Find: Carbon, Plus Germanium, Helps Silicon 'Shine,' UD Researchers Say
		Germanium, coupled with a tiny bit of carbon and mounted on a silicon substrate, exhibits surprising optical responses to laser light, says Paul R. Berger, an associate professor of electrical and computer engineering and one of the few promising young investigators nationwide to receive a 1996 National Science Foundation CAREER award.
		Germanium and carbon were loaded into separate "ovens," or effusion cells operating at high temperatures (greater than 600-700° Celsius), where they emitted a vapor that stuck to a heated silicon substrate loaded inside a high-vacuum chamber.
		Moreover, he adds, the UD device demonstrated a relatively efficient conversion rate, given the fact that light was transformed through direct contact with an ultra-thin (50 angstroms) active region of only 20 atomic layers, under "surface-normal" conditions--and not through a concentrating waveguide.
	www.eurekalert.org /pub_releases/1997-08/UoD-DFCP-220897.php (590 words)

	Science News: The mod couple: wedding silicon and germanium for speed and light - new material - Cover Story
		In other words, silicon doesn't naturally emit light; therefore, its usefulness for optical devices is severely restricted.
		Germanium atoms naturally settle into an arrangement with atomic spacings about 4 percent larger than those of a silicon lattice.
		Work on silicon metal-oxide chips -- like those found in most computers -- based on silicon-germanium alloys is not as far along, but there has been some progress.
	www.findarticles.com /p/articles/mi_m1200/is_n3_v146/ai_15625836 (1435 words)

	Silicon and Germanium
		Graphs of Murnaghan equation fits to energy against volume for silicon and germanium in the ST12, BC8 and diamond phases are shown in Figures 4.3 and 4.4.
		For the case of germanium the equilibrium axial ratio occurs at 1.24 which represents a 6% overestimate of the experimental value[18, 22].
		The calculated valence charge densities for germanium in the BC8 structure is shown in figure 4.7 and ST12 structure is shown in Figure 4.8.
	cmt.dur.ac.uk /sjc/thesis/thesis/node35.html (1071 words)

	Silicon-germanium can push back chip barrier (Site not responding. Last check: 2007-10-15)
		STANFORD -- Replacing pure silicon with a mixture of germanium and silicon can push back the fundamental and practical limits to making faster and more powerful integrated circuits, without giving up the microelectronic industry's massive investment in silicon technology.
		Researchers have shown that the addition of germanium to silicon can increase the speed at which electrons travel through the transistors that form the basic building blocks in integrated circuits.
		Because the germanium atoms are larger than silicon atoms, adding them causes strain within the material's crystalline structure.
	www.stanford.edu /dept/news/relaged/940318Arc4371.html (494 words)

	Silicon Germanium (SiGe) Technology Enhances Radio Front-End Performance - Maxim/Dallas
		Silicon Germanium (SiGe) is the newest innovation for simultaneously improving the power consumption, sensitivity, and dynamic range of a receiver.
		Maxim's new Silicon Germanium SiGe process, GST-3, was created as an extension of GST-2 (a bipolar process with a transition frequency of 27GHz) by doping the transistor bases with germanium.
		The Silicon Germanium MAX2641 is optimized for operation in the 1400MHz to 2500MHz range, with typical performance that includes 14.4dB gain, -4dBm input IP3 (IIP3), 30dB reverse isolation, and a 1.3dB noise figure at 1900MHz (Figure 4).
	www.maxim-ic.com /appnotes.cfm/appnote_number/697 (2007 words)

	Geek.com Geek News - IBM to introduce strained germanium (Site not responding. Last check: 2007-10-15)
		Germanium has always had better conductivity and transport properties (mobility) than silicon; yet even in the early research of semiconductor materials germanium was long ago back-seated to silicon for a number of reasons, a major one being that our advanced manufacturing processes were then incapable of efficiently producing an oxide to insulate the gate.
		All of these place silicon composition to be 27-28% of the earth's crust, with 2 of them specifically stating the number as 27.72%.
		This Germanium is grown in tall round single crystal ingots similar to the way silicon ingots are grown, then sliced and machined into these lenses.
	www.geek.com /news/geeknews/2004Dec/bch20041208028154.htm (1882 words)

	Silicon germanium makes its mark (February 2000) - Physics World - PhysicsWeb (Site not responding. Last check: 2007-10-15)
		By replacing a fraction of the silicon atoms with germanium, it is possible to design a wide range of electronic devices that are faster than silicon and almost as cheap to manufacture.
		There are many reasons why silicon devices completely dominate the microelectronics market, but the overriding factor is their low manufacturing cost.
		Silicon germanium (SiGe) can be grown onto silicon wafers and easily manipulated to form devices with different properties.
	physicsweb.org /articles/world/13/02/9 (496 words)

	Silicon germanium challenges metrology
		Silicon germanium (SiGe) is one of those proliferating materials.
		Another application for SiGe is strained silicon, wherein the traditional Si active device layer is replaced with a thin (under 200 angstrom) strained Si layer deposited epitaxially on a several-micron-thick bed of epitaxially grown SiGe.
		In this application, a layer of SiGe (500 to 800 angstrom) is grown epitaxially on the shallow implanted source and drain region of the device.
	www.commsdesign.com /printableArticle?articleID=16501714 (1548 words)

	PRESS RELEASE IBM Announces Next Generation Silicon Germanium Technology (Site not responding. Last check: 2007-10-15)
		"Silicon germanium technology is increasingly influencing next generation consumer devices and applications," said Bernie Meyerson, Chief Technologist for Systems and Technology Group, IBM.
		CMOS chips are the foundation for digital computing applications, while silicon germanium (SiGe) BiCMOS chips provide enhanced radio frequency communications and analog functions in addition to the core digital computing capabilities.
		IBM semiconductor innovations include dual-core microprocessors, copper wiring, silicon-on-insulator and silicon germanium transistors, strained silicon, and eFUSE, a technology that enables computer chips to automatically respond to changing conditions.
	www.marketwire.com /mw/release_html_b1?release_id=92452 (780 words)

	The oxides of carbon, silicon, germanium, tin and lead
		Silicon dioxide doesn't react with water, because of the difficulty of breaking up the giant covalent structure.
		Silicon dioxide also reacts with sodium hydroxide solution, but only if it is hot and concentrated.
		Note: There are almost certainly going to be similar complexes formed in the germanium and tin cases in the presence of excess concentrated hydrochloric acid, but because they aren't important to the reaction happening, they tend to be ignored at this level.
	www.chemguide.co.uk /inorganic/group4/oxides.html (1567 words)

	Silicon-Germanium (SiGe) Alloy / Wafers from READE
		When silicon and germanium - both well-known semi-conducting elements - are combined, they form the basis of very high-speed transistors that can attain switching speeds well beyond traditional semiconductor capabilities.
		In addition silicon germanium provides ultra high frequency capability (well over 100GHz) on the identical silicon platform where baseband, memory and digital signal processing functions can also be integrated.
		This is the rationale for the ascendancy of silicon germanium technology and is the reason why it appears prominently on technology roadmaps around the world.
	www.reade.com /Products/Alloys/silicon_germanium.html (388 words)

	Silicon, Germanium File Grievance Against Arnold Schwarzenegger (Site not responding. Last check: 2007-10-15)
		Silicon should act a little more noble and admit that eventually we're just going to replace his ass with carbon nanotubes.
		Silicon and Germanium claimed to remain firm in their resolve, but their, weak ass, half hour bout of crying afterwards did nothing to strengthen their position, or their chemical composition, for that matter.
		When the governator then announced the possibility of new legislation to remove them from the periodic table entirely, Silicon and Germanium folded, and promptly decayed into a useless mass of protons, neutrons, and electrons.
	hcs.harvard.edu /~hsp/18_Iron.html (701 words)

	6.09: Crucial Tech
		However, researchers soon discovered that it was a difficult material to work with on a large scale, and so germanium stayed in the lab, while silicon went on to conquer the world.
		What Meyerson has perfected is a way to combine a small amount of germanium with silicon so that you still get most of the element's benefits, without requiring any changes in how chips are fabricated.
		The bottom of the chip is made of silicon, and then he increases the amount of germanium as the chip goes up.
	www.wired.com /wired/archive/6.09/crucialtech.html?pg=5 (793 words)

	Silicon Germanium
		Silicon Germanium technology has been developed to the point where production qualified processes are becoming available, from IBM in the US, SiGe Microsystems in Canada, and from AMS in Europe.
		Operation down to 1 Volt is possible, and >2GHz has been demonstrated on a fast Silicon process [see paper].
		One of the problems of SiGe is that it runs at a higher current density than silicon, in order to achieve the best Ft and speed of operation.
	ourworld.compuserve.com /homepages/petersaul/silicon_germanium.htm (221 words)

	Silicon & Germanium Reactive Intermediates
		Anybody would expect that the silicon and germanium analogues of all the species listed above should be quite reactive indeed, and they'd be right.
		In fact, multiple bonds involving silicon or germanium are so thermodynamically unstable that up until about 30 years ago, there were no known examples of molecules containing them.
		Cam Harrington are examining the reactivity of the germanium analogues of some of these compounds, such as 1,1-diphenylgermene (5) and the (1-germa)hexatriene derivative 6, which are prepared in the same ways as the corresponding silicon compounds 4 and 2.
	www.chemistry.mcmaster.ca /~wjl/leigh/res-sil.html (1298 words)

	Silicon Germanium (SiGe) Downconverter Tuned for GPS Receivers - Maxim/Dallas
		Silicon Germanium (SiGe) Downconverter Tuned for GPS Receivers
		The MAX2682 is one of a family of Silicon Germanium (SiGe) downconverters designed for low-voltage, low-current operation, and is ideal for portable communications equipment.
		For application of the MAX2682 at 900MHz, 1950MHz of 2450MHz, or for further device information, consult the MAX2680/MAX2681/MAX2682 Silicon Germanium (SiGe) Downconverters data sheet.
	www.maxim-ic.com /appnotes.cfm/appnote_number/890 (298 words)

	Embedded News - Cypress Samples Single-Chip OC-48 Silicon Germanium SERDES
		Silicon Germanium is a performance enhancement to standard Complimentary Metal Oxide Semiconductor (CMOS) and BiPolar CMOS (BiCMOS) processes.
		By precisely depositing silicon germanium (SiGe) on standard silicon (Si) wafers, manufacturers are able to achieve the performance characteristics of gallium arsenide and other III-V compound technologies at costs comparable to CMOS technologies.
		Cypress is a leader in pure optical and optoelectronic technologies designed to push network transmissions to higher performance levels and to satisfy the increasing demand for network bandwidth.
	www.embeddedstar.com /press/content/2002/6/embedded4050.html (738 words)

	Germanium Silicon Silica DRI/RDA, negative health/side effects, overdose, toxicity, nutritional requirements
		Both, germanium and silicon have somewhat of a blood thinning effect: Germanium, by inhibiting
		while magnesium is the most potent silicon antagonist, with sodium being synergistic with silicon.
		silicon is supplemented, and at which point silicon will no longer be able to lower magnesium.
	www.acu-cell.com /gesi.html (1246 words)

	Silicon Germanium (SiGe) Heterostructures
		The idea is that you start with a substrate of silicon, and grow on that a layer of silicon-germanium alloy.
		The thing is, though, that germanium has a lattice constant that is 4.17% larger than that of silicon, so the alloy either strains to match up or relaxes and dislocates.
		Then an alloy with a higher germanium content may be grown on this, with less strain than it would have if it had been grown on pure silicon.
	www.chrastina.net /sige.html (228 words)

	What is Silicon-Germanium? (Site not responding. Last check: 2007-10-15)
		ilicon-Germanium (SiGe) is a new 50 GHz technology from IBM that combines the integration and cost benefits of silicon with the speed of more esoteric and expensive technologies such as gallium-arsenide.
		Germanium introduced into the base layer of an otherwise all-silicon bipolar transistor creates a significant improvements in operating frequency, current, noise, and power capabilities.
		At the same time, the key advantages of a state-of-the-art, 200 mm silicon process are maintained, including high integration level and economy of scale.
	www.research.ibm.com /sigetech/describe.html (228 words)

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