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Topic: Silicon on Sapphire

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	Sapphire - Al2O3
		Sapphire semiconductor substrates are available in all orientations including R-axis (10-12), C-axis (0001), A-axis (11-20), and M-axis (11-10).
		Sapphire Products is a leading provider of high quality sapphire substrates to the expanding Gallium Nitride LED based market.
		Other sapphire orientations, misoriented substrates, and wafer tolerances are available.
	www.universitywafer.com /Wafers___Services/Sapphire/sapphire.html (241 words)

	Silicon on sapphire - Biocrawler
		Silicon on sapphire (SOS) is a hetero-epitaxial process for integrated circuit manufacturing that consists of a thin layer of silicon grown on a sapphire (Al) wafer.
		The advantage of sapphire is that it is an excellent electrical insulator, preventing stray currents caused by radiation from spreading to nearby circuit elements.
		This drawback is because the SOS process results in the formation of dislocations from crystal lattice disparities between the sapphire and silicon.
	www.biocrawler.com /encyclopedia/Silicon_on_Sapphire (157 words)

	Operational amplifier using bipolar junction transistors in silicon-on-sapphire - Patent 5374567
		The amorphisation of silicon wafer 10 occurs roughly in interface region 16 and is accomplished by using an implant of Si.sup.28 at an energy level of 185 kilo electron volts (KeV) and at a dose of 6.times.10.sup.14 ion/cm.sup.2, for example.
		This is the amorphisation of the silicon at its surface layer 20 accomplished by using a shallow implant of Si.sup.28 at an energy level of 100 KeV and an implant dose of 10.sup.15 ion/cm.sup.2, for example.
		For example, in NPN devices a buried layer is formed in silicon wafer 10 by ion implantation of, for example, phosphorous at 80 KeV at a dose of 3.times.10.sup.15 ion/cm.sup.2.
	www.freepatentsonline.com /5374567.html (3834 words)

	Minimum charge FET fabricated on an ultrathin silicon on sapphire wafer - Patent 5416043
		Due to crystal and thermal expansion mismatches between the silicon and the sapphire, the silicon films are typically heavily populated with crystalline defects and electrically active states.
		The silicon dioxide region 30 is sufficiently thick to leave an approximately 110 nm thick region of substantially pure silicon 28 (i.e., containing substantially zero defects and bandgap states) immediately adjacent the sapphire substrate 12.
		2B, the silicon N-type region 22N is formed by ion implantation of the Silicon layer 28 underlying the island (36n,32n,33n) with phosphorus and the silicon P-type region 22P is formed by ion implantation of the Silicon layer 28 underlying the island (36p,32p,33p) with phosphorus.
	www.freepatentsonline.com /5416043.html (8502 words)

	SemiSerious » Silicon-on-sapphire technically superior
		It is necessary to cool the wafer to sub-zero temperatures to prevent Al out-diffusion into the silicon layer during ion implantation.
		The application of epitaxial growth of silicon on sapphire substrates for fabricating MOS devices involves a silicon purification process that mitigates crystal defects, which result from a mismatch between sapphire and silicon lattices.
		Silicon is recessed in regions outside the polysilicon gate stack by poly oxidation and further recessed by the sidewall spacer formation process to a thickness of approximately 78 nm.
	www.semiconductorblog.com /2007/07/18/silicon-on-sapphire-technically-superior (644 words)

	Ultra-high vacuum/chemical vapor deposition of epitaxial silicon-on-sapphire - Patent 5402749
		At at least one sapphire substrate is placed in the ultrahigh vacuum chamber and is purged in the chamber with about 600 sccm hydrogen for about 5 minutes.
		A silicon film or a doped film is deposited on the sapphire substrate at temperatures between about 700 and 850.degree.
		A placing 20 of at least one sapphire substrate in the ultra-high vacuum chamber precedes a purging 30 of the sapphire substrate in the chamber with hydrogen.
	www.freepatentsonline.com /5402749.html (1957 words)

	Silicon on Sapphire Pressure & Temperature Transducers for the Injection Molding Industry (Site not responding. Last check: )
		For this study, the silicon on sapphire nozzle pressure transducer is operated with a +4oF nozzle melt temperature variation, in which absolute error calculated to +150 psi, or 0.5% of span at the nozzle, while repeatability error amounted to only +38.4 psi., or 0.13% of span at the nozzle.
		Silicon on Sapphire also had the lowest repeatability error of only +38.4 psi, or 0.13% vs 0.10% spec, compared to +258 psi for the nearest other transducer and +292 to +341 psi for the others transducers evaluated.
		This superior performance of silicon on sapphire nozzle pressure transducers is attributed to the user's ability to zero out pressure temperature effects at the melt temperature, for which 4 F was used in the silicon sapphire calculation compared to the &2 F variation measured in the Van Dorn Example 3.
	www.sensonetics.com /54ANTEC9.html (3618 words)

	NationMaster - Encyclopedia: Silicon on Sapphire (Site not responding. Last check: )
		Silicon on sapphire (SOS) is a hetero-epitaxial process for integrated circuit manufacturing that consists of a thin layer (typically thinner than 0.6 micrometres) of silicon grown on a sapphire (Al) wafer.
		Silicon on insulator (SOI) is a layered structure consisting of a thin layer of silicon, from 50 nm to 100 Âµm, which is created on an insulating substrate, which is usually sapphire or silicon with an insulating layer of silicon dioxide(SiO2) 80 nm to 3 Âµm thick on its...
		Silicon on insulator (SOI) is a layered structure consisting of a thin layer of silicon, from 50 nm to 100 µm, which is created on an insulating substrate, which is usually sapphire or silicon with an insulating layer of silicon dioxide (SiO
	www.nationmaster.com /encyclopedia/Silicon-on-Sapphire (768 words)

	Silicon on Sapphire Material Processing
		Finally, the silicon on sapphire is annealed thermally at 600-700 degrees C which produces solid phase epitaxial growth from the unstrained topside silicon down to the sapphire interface, as shown in Fig.
		The interface region of the silicon and the sapphire is next rendered amorphous by channelled implanting of heavy doses of silicon, as shown in Fig.
		Finally, the silicon on sapphire is annealed thermally at 600- 700 degrees C which produces solid phase epitaxial growth from the unstrained topside silicon down to the sapphire interface, as shown in Fig.
	www.priorartdatabase.com /IPCOM/000055312 (253 words)

	Optoelectronic and semiconductor materials processing
		Sapphire substrate, blank and window polishing by Valley Design
		Silicon Carbide wafers and substrates polished to a mirror finish
		Silicon wafer and die thinning, backlapping and polishing
	www.valleydesign.com /sitemap.htm (253 words)

	TechOnline \| Si-on-sapphire goes mainstream
		Though the silicon substrate in a bulk device is excellent for the fabrication of active devices, it is a compromise material that provides neither perfect isolation nor conduction.
		That enables the amorphous silicon layer near the interface to be regrown with minimal lattice defects.
		The silicon layer is then thinned by oxidation to consume remaining defects near the surface, eliminating twin defects and bandgap states and resulting in a pure single-crystal silicon layer for CMOS devise fabrication.
	www.techonline.com /product/underthehood/201801386 (1105 words)

	JPL.NASA.GOV: Feature Stories
		Sapphire was used because it can retain sodium under these conditions.
		Silicon, which comprises approximately half of the materials used in the collector arrays, does not retain sodium but does retain many other elements, including the important rock-forming element magnesium.
		silicon on sapphire), the effects of impurities in the collector material were minimized by only analyzing the thin layer.
	www.jpl.nasa.gov /news/features.cfm?feature=635 (783 words)

	SOS Technology ｜Product Information｜OKI’s Semiconductor Business Group
		Sapphire and rubby which have captured people's hearts with their beautiful colors fall into the same category as aluminum used for one-yen coins.
		Sapphire is employed in CD pickup lens and other components because of its high optical transparency and heat resistance.
		Sapphire substrates are also now widely used in the production of the white, blue, and other LED elements which have started to appear as new lighting on the market.
	www.okisemi.com /en/topics/000576.html (939 words)

	Molecular Expressions: The Silicon Zoo - The Full Adder
		Silicon is grown onto the smooth, hard, glass-like surface of the sapphire wafer using epitaxial methods such as Molecular Beam Epitaxy (MBE) or Metal Oxide Chemical Vapor Deposition (MOCVD) where the silicon atoms are assembled one-by-one on the surface of the sapphire wafer.
		Because the crystal structure of silicon is similar to sapphire, the SOS structure appears to be one crystal with a strong molecular bond between the two materials.
		The main commercial promise of a sapphire substrate is that it has very low capacitance compared to silicon, allowing signals to pass overhead in wires without slowing down.
	micro.magnet.fsu.edu /creatures/pages/fulladder.html (583 words)

	Silicon On Insulators; SOI; Silicon on Sapphire; SOS; Buried Oxide
		of aluminum from the sapphire substrate to the silicon layer.
		The desired silicon orientation is <100>, which has been achieved on various sapphire orientations, i.e., <1102>, <0112>, <1012>.
		silicon (which will subsequently serve as the layer over which the circuits will be built) is deposited over the buried oxide.
	www.siliconfareast.com /soi.htm (490 words)

	Broadband Mirrors Built of Porous Silicon
		Discovered in the late 1950s, porous silicon is produced by electrochemically etching a silicon wafer in a hydrofluoric acid bath, which yields layers with a porous structure that alters the optical properties of the material.
		Michael Gal, a professor of physics at the university, explained that by varying the etching parameters, it is possible to control the size of the pores, quantified by a figure of merit known as porosity.
		It also is investigating the construction of mirrors for the 1.3- to 1.6-µm spectral range, the integration of porous silicon mirrors with other optoelectronic components, the fabrication of porous-silicon semiconductor saturable absorber mirrors, and the doping of the mirrors with optically active materials to enable switchable transmission.
	www.photonics.com /content/spectra/2004/July/tech/79887.aspx (697 words)

	fUSION Anomaly. Silicon
		silicon (sîl´î-ken, -kòn´) noun Symbol Si A nonmetallic element occurring extensively in the earth's crust in silica and silicates, having both an amorphous and a crystalline allotrope, and used doped or in combination with other materials in glass, semiconducting devices, concrete, brick, refractories, pottery, and silicones.
		Silicon, with atomic number 14 and atomic weight 28, is the second most common element in nature.
		Silicon, symbol Si, semimetallic element that is the second most common element on earth, after oxygen.
	www.fusionanomaly.net /silicon.html (1009 words)

	Sapphire Al2O3 for electronic applications
		Synthetic single-crystal sapphire is a single crystal form of corundum, Al2O3, also known as alpha-alumina, alumina, and single crystal Al2O3.
		Sapphire is aluminium oxide in purest form with no porosity or grain boundaries, making it theoretically dense.
		We are able to deliver the tightest specification in the industry to meet all your particular requirements.
	www.mt-berlin.com /frames_cryst/descriptions/sapphire_epi.htm (263 words)

	Halfbakery: Single-Crystal Silicon Manufacturing
		In both cases it is known that if the initial silicon is preprocessed into a single large crystal, the final chips will be more efficient at what they are expected to do (integrated circuits may not function at all, if anything less than single-crystal silicon is used).
		As the molten silicon cools and solidifies where it touches the seed, the regularly ordered layout of atoms within that silicon crystal provides a template that encourages growth of the crystal.
		That is, if the melting point of silicon is something like 1400 Celsius, then ALL of a piece of about-to-be-zone-refined silicon should be very near that temperature, and even the surrounding atmosphere (likely pure argon, since oxygen would combine with the silicon) should be that hot, too.
	www.halfbakery.com /idea/Single-Crystal_20Silicon_20Manufacturing (1274 words)

	Silicon Quest International - Frequently Asked Questions
		Silicon is at the heart of basically every electronic device.
		The thickness of the silicon wafer can be measured in either microns (µm), mils, inches or millimeters.
		The silicon epitaxial (epi) process involves growing a layer of single crystal silicon from vapor onto a single crystal silicon substrate at high temperatures.
	www.siliconquest.com /old/products/FAQs.htm (862 words)

	TechMatch
		h) fabricating liquid crystal capacitors on said silicon-on sapphire structure that are electrically connected to said transistors by said electrical contacts.
		The method of claim 10 wherein said sapphire substrate has an r-plane orientation and said single crystal silicon structure has a (100)-orientation.
		The method of claim 10 further includes forming a layer of optical filters on said silicon-on sapphire structure.
	www.dodtechmatch.com /DOD/Patent/PatentDetail.aspx?type=claims&id=6954235&HL=ON (617 words)

	fUSION Anomaly. Silicon
		silicon (sîl´î-ken, -kòn´) noun Symbol Si A nonmetallic element occurring extensively in the earth's crust in silica and silicates, having both an amorphous and a crystalline allotrope, and used doped or in combination with other materials in glass, semiconducting devices, concrete, brick, refractories, pottery, and silicones.
		Silicon, with atomic number 14 and atomic weight 28, is the second most common element in nature.
		Silicon, symbol Si, semimetallic element that is the second most common element on earth, after oxygen.
	fusionanomaly.net /silicon.html (1009 words)

	Laser-assisted fabrication of bipolar transistors in silicon-on-sapphire (SOS) - United States Patent H1,637
		A method according to claim 8 in which the thickness of said silicon on said silicon-on-sapphire wafer is at least 1 micrometer and said corresponding junction depth in said bipolar junction transistor is defined therein.
		A method according to claim 23 in which the thickness of said silicon on said silicon-on-sapphire wafer is at least 1 micrometer and said corresponding junction depth in said bipolar junction transistor is defined therein.
		The inability to achieve silicon epitaxially grown on sapphire without dislocations, slip planes, and twin defects results in a failure mechanism for devices by means of what is known as "diffusion pipes".
	xrint.com /patents/us/H1637 (6176 words)

	Sapphire, sapphire wafer, SOS, Silicon On Sapphire, sapphire window, sapphire tubing, sapphire rod, sapphire ribbon, ...
		SAPPHIRE, Al Single crystal sapphire possesses a unique combination of excellent optical, physical and chemical properties.
		The hardest of the oxide crystals, sapphire retains its high strength at high temperatures, has good thermal properties and excellent transparency.
		It is chemically resistant to common acids and alkali at temperatures up to 1000 °C as well as to HF below 300 °C. These properties encourage its wide use in hostile environments where optical transmission in the range from the vacuum ultraviolet to the near infrared is required.
	www.almazoptics.com /sapphire.htm (248 words)

	Solid State Technology - SST September 2007: Looking inside Apple's iPhone: Rad-hard technology?
		First, a hetero-epitaxial layer of silicon is grown on the sapphire; since the crystalline structures are not a perfect match, this is typically full of defects such as dislocations and twinning and stacking faults.
		Sapphire forms a hexagonal rhombohedral crystal structure with lattice constants of a = 4.785Å, and C = 12.991Å.
		However, the lattice mismatch between the R-plane sapphire and silicon is rather large, being 6% and 12.5% in the two orthogonal directions.
	sst.pennnet.com /Articles/sst_chipforensics.cfm (1859 words)

	NSF - OLPA - PR 03-31: NEW MEASUREMENTS SHOW SILICON NANOSPHERES RANK AMONG HARDEST KNOWN MATERIALS
		Two silicon nanoparticles with approximately 70-nm radii imaged by transmission electron microscopy (TEM) by Chris Perrey in Professor Barry Carter's research group at the University of Minnesota.
		A 12-nm diameter silicon nanosphere, deformed by 2.3 nanometers in an atomistic simulation conducted by Mike Baskes of Los Alamos National Laboratory.
		To produce a small gear, for example, the shape could be etched into a silicon wafer and filled with a composite including silicon carbide or silicon nitride nanospheres.
	www.nsf.gov /od/lpa/news/03/pr0331.htm (892 words)

	SAPPHIRE CRYSTAL, AI2O3
		As the hardest of all oxide crystals, Sapphire has a combination of optical and physical properties that make it the best choice for a variety of demanding applications.
		These properties encourage the use of Sapphire in aggressive environments where reliability, optical transmission and strength are required.
		Sapphire boule grown by CZ method and as-cut Sapphire blocks are also available.
	www.redoptronics.com /Sapphire-crystal.html (119 words)

	Isotopically Pure Silicon-28 (SI-28) \| Isonics Semiconductor
		Improvement in the thermal conductivity of silicon is important because as the feature size continuously decreases, the current density increases, and more heat is generated per unit volume, causing device operating temperatures to rise.
		Isotopically pure silicon can be combined with other advanced wafer technologies such as silicon-on-insulator (SOI) and silicon-on-sapphire (SOS) wafers, where thermal management is of critical interest due to the electrical and thermal insulation of the active silicon layer.
		This is equivalent to 5 atomic layers of silicon dioxide.
	www.isonics.com /silicon/SI-28Pure.html (2072 words)

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