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| | Plasma arc sintering of silicon carbide - Patent 4676940 |
 | | However, sintering of silicon carbide should be performed in the absence of oxygen or oxygen-bearing gases, including water and carbon dioxide, to prevent formation of oxides, which may result in products having undesirable physical and chemical properties. |
 | | The preferred gases for sintering of silicon carbide are nitrogen, argon, helium, hydrogen and/or neon, however, any plasma gas may be used in accordance with the present invention, depending upon sintering requirements. |
 | | Sintering temperatures and plasma gas enthalpies will vary depending on which plasma gas is utilized in the process of the invention. |
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