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| | PMo04 |
 | | SINIS junctions (where S, I, and N denote a superconductor, insulator, and normal metal, respectively) are promising devices for superconducting digital circuits, and therefore, studies of their physical properties are of interest. |
 | | Specifically, a SINIS junction may have a set of macroscopically distinct quantum states; this results in an unconventional supercurrent that originates from an energy level near the Nb gap energy in Nb/Al/AlOx/Al/AlOx/Al/Nb junctions. |
 | | Moreover, similar (but weaker) gap features are present at the same voltage in SINININIS junctions, contrary to an intuitive assumption that the addition of two barriers to the SINIS structure may produce a considerable shift of such features to a higher voltage. |
| www.tip.csiro.au /ISEC2003/abstracts/PMo04.htm (267 words) |
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