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| | Static random access memory utilizing gated diode technology patent invention |
 | | A new type of static RAM cell is disclosed that is based on a gated diode and its voltage amplification characteristic. |
 | | The cell combines the advantages of a static RAM, in which data refresh is not needed, and those of gated diode cells, which are scalable to low voltages, have a high signal to noise ratio, high signal margin, and tolerance to process variations, to form a single high performance static memory cell. |
 | | A number of embodiments of the static gated diode RAM cell, with different circuit configurations and transistor counts, are disclosed, including a basic, minimal cell consisting of six transistors and a gated diode with separate read/write ports to a cell with eight transistors and a gated diode. |
| www.freshpatents.com /Static-random-access-memory-utilizing-gated-diode-technology-dt20060907ptan20060198181.php (1371 words) |
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