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Nanomem - Work Planed The objective of this proposal is to develop this new technology to the degree where it is capable to replace the currently available generation of RAM (which is based on semiconductor technology) in all applications. Implementation of TTRAM requires the use of three separate sets of control line arrays and a special pulse read protocol in which DC bias voltages are used to suppress the parasitic conduction paths and the signals are written and read as superimposed voltage pulses. The TTRAM structure is a second technological issue to reduce the size of a new generation MRAM. www.nanomem.u-nancy.fr /The_work_planed.asp   (1336 words)

TTRAM - Wikipedia, the free encyclopedia TTRAM, short for "Twin Transistor RAM" is new type of computer memory in development by Renesas. This effect causes capacitance to built up between the transistors and the underlying substrate, originally considered a nuisance, but here used to replace a part outright. However the requirement to be built on SOI fab lines, which are currently the "leading edge", makes the cost somewhat unpredictable at this point. en.wikipedia.org /wiki/TTRAM   (227 words)

Twin-transistor RAM has no capacitors Whereas a DRAM cell requires a specially shaped capacitor, the TTRAM memory cell doesn’t use a capacitor, and so is compatible with shrinks of process technology that make transistors smaller and faster. Also, on the 2Mbit test chip, the TTRAM cell size is 0.33um2, over 5% smaller than the 0.35um2 cell size of a 130nm CMOS process embedded DRAM test chip fabricated separately by Renesas. In the new TTRAM memory cell, two transistors are serially connected on an SOI substrate. electronics-automation.com /articles/twin-transistor-ram-has-no-capacitors.html   (388 words)

Print Version-Renesas reports floating-body SOI RAM   (Site not responding. Last check: 2007-09-16) The TTRAM is intended to be used with 65nm generation and subsequent silicon-on-insulator (SOI) CMOS manufacturing processes, Renesas (Tokyo) said. As the TTRAM memory cell doesn't use a capacitor, it is compatible with process technology shrinks that make transistors smaller and faster and this provides roadmap for future manufacturing. In the TTRAM memory cell, two transistors are serially connected on an SOI substrate. www.eetasia.com /ARTP_8800377834_499486.HTM   (387 words)

Renesas builds capacitorless twin-transistor RAM for embedded SoCs Unlike a traditional DRAM cell which requires a specially shaped capacitor, the TTRAM memory cell doesn't use a capacitor, so it is compatible with shrinks of process technology that make transistors smaller and faster. On the 2Mbit test chip, the TTRAM cell size is 0.33um2, over five percent smaller than the 0.35um2 cell size of a 130nm CMOS process embedded DRAM test chip fabricated separately by Renesas. Because the TTRAM memory cell operations don't require a step-up voltage or negative voltage, as DRAM cells do, the new cell design suitable for use with future finer processes and lower operating voltages. www.embedded.com /shared/printableArticle.jhtml?articleID=171202270   (380 words)

Renesas Technology Licenses Capacitor-Less Twin-Transistor RAM to EMT - Technology - RedOrbit The memory cell is composed of only two serially connected transistors and eliminates the need for a metal-insulator-metal capacitor implemented in conventional memory cells. After licensing the TTRAM technology based memory IP from EMT, embedded memory users will soon be able to benefit from the high-density, cost-effective solutions that were previously only available in bulk CMOS. Through the collaboration in TTRAM technology, both companies will provide a high-density memory solution to their customers and contribute to the development of memory IP technology. www.redorbit.com /news/technology/520690/renesas_technology_licenses_capacitorless_twintransistor_ram_to_emt/index.html   (590 words)

Alive 5 - deez TTram is also usually a lot faster and the board can hold more memory. Another, less obvious pitfall is hardware registers, not only does the Falcon lack shadowregisters available on the ST but since some addon boards are fully 32bit, accessing $ffxxxx will cause problems, use the full 32bit address instead, $ffffxxxx to avoid problems with expansion boards. The TTram vs. STram problem can be solved by clearing the flags in the program header but this has to be considered bad programming since its very easy to allocate memory for your purposes. alive.atari.org /alive5/deez.php   (2082 words)

PlanetAnalog.com - Renesas Technology Develops Capacitorless Twin-Transistor RAM, Enabling Faster, More Power-efficient ... Researchers from Renesas unveiled details of the TTRAM in a paper presented the 2005 IEEE Custom Integrated Circuits Conference (CICC) in San Jose, California on September 20. While a DRAM cell requires a specially shaped capacitor, the TTRAM memory cell doesn't use a capacitor, so it is compatible with shrinks of process technology that make transistors smaller and faster. Also, on the 2Mbit test chip, the TTRAM cell size is 0.33um2, over 5 percent smaller than the 0.35um2 cell size of a 130nm CMOS process embedded DRAM test chip fabricated separately by Renesas. www.planetanalog.com /printablePressrelease.jhtml?HeadlineId=372570&CompanyId=2   (567 words)

Earxtutchap9 - Atari Forum Wiki TTram: Happy owners of an Atari TT (hence the "TT" in TTram) or a good Falcon-accelerator can be souped up with fast-ram. This RAM is free from accesses by the video and soundchips and can be accessed with full 32 bits at once. Atari has provided some bits in the executable-header that enables to use or neglect the TTram. www.atari-forum.com /wiki/index.php/Earxtutchap9   (926 words)

ISTweb - IST Projects The overall thrust of this project is to develop two varieties of Tunnelling-Magnetic RAM (MRAM), namely the MIMRAM (Metalinsulator-Metal RAM) and the TTRAM (Tunnelling Transistor RAM) to the degree they have the capability to replace the currently available generations of RAM (based on semi-conductor technology). Compared to the first generation of MRAM, the MIMRAM (2-terminal) and the TTRAM (3-terminal) offer the advantage of small cell size in the 10 nm range and hence high packaging density, in conjunction with suppression of parasitic signal paths in read and write operation. The actual active memory (mostly DRAM) is volatile, dissipates large amounts of energy owing to frequent refreshing and the requirement of individual capacitor for each memory. cordis.europa.eu /data/PROJ_IST/ACTIONeqDndQM_EP_RCN_Aeq55032.htm   (830 words)

EETimes.com - Renesas licenses capacitorless RAM to Canadian company Through the agreement, Renesas expects to be a pioneer in capacitorless memory technologies that integrate a dynamic RAM with system-on chip LSIs on silicon-on-insulator (SOI) wafers. Renesas presented the TTRAM technology at the 2005 IEEE Custom Integrated Circuit Conference (CICC) last September. Renesas' TTRAM technology features two serially connected transistors, eliminating the need for a metal-insulator-metal capacitor implemented in conventional memory cells. www.eetimes.com /news/semi/rss/showArticle.jhtml?articleID=188700159   (572 words)

Solid State Technology - EMT licenses Renesas TTRAM for embedded SOI memory EMT licenses Renesas TTRAM for embedded SOI memory Renesas aims to expand its TTRAM technology, released in September 2005, as the mainstream embedded SOI memory IP technology. The TTRAM memory cell, which is scalable in 65nm or below process technologies, incorporates two serially connected transistors, eliminating the need for a metal-insulator-metal capacitor implemented in conventional memory cells. sst.pennnet.com /Articles/Article_Display.cfm?ARTICLE_ID=256431&p=5   (243 words)

Renesas reports floating-body SOI RAM Renesas Technology Corp. said early this week that it has developed a capacitor-less "floating-body" twin-transistor RAM (TTRAM), that would enable faster, more power-efficient embedded memory for SoC devices. The TTRAM is intended to be used with 65nm generation and subsequent SOI CMOS manufacturing processes, Renesas said. A 2Mb TTRAM test chip fabricated with a 130nm SOI CMOS process, achieved 250MHz operation for sustained data output and 133MHz for random access operation, while dissipating an active power of only 148mW. www.eetasia.com /ART_8800377875_499486_893d9aca.HTM?from=RSS   (559 words)

Renesas Develops High-density Capacitorless Memory Aimed at Replacing Embedded DRAMs for 65-nm Generation and Beyond -- ... Renesas Technology Corp. has developed a high-density memory "TTRAM (twin transistor RAM)" to be embedded in system-on-a-chip (SoC) devices built with 65-nm and later generation processes. TTRAM uses two transistors connected in series on the SOI substrate as the memory cell. Since these memory cell operations do not require a step-up or negative voltage as DRAM cells do, TTRAM is suitable for applications in miniaturization processes and lower voltage operations. techon.nikkeibp.co.jp /english/NEWS_EN/20050928/109002   (608 words)

TTRAM - Requirements Management   (Site not responding. Last check: 2007-09-16) Welcome to TTRAM - TechThugz ultimate Requirements Management web application. The main goal of this software is to create a way to manage software requirements for projects the company is working on and has worked on in the past. The tool will allow engineers to update and manage requirements within projects as well as all the details that go along with a specific requirement. omega.cs.iit.edu /~ttman   (161 words)

Renesas Technology develops capacitorless twin-transistor RAM, enabling faster, more power-efficient embedded memory ... September 2005 - Renesas Technology Corp. today announced that it has developed a high density capacitorless twin-transistor RAM (TTRAM) that achieves both high speed operation and low power consumption. The memory design will allow fast, high density storage to be embedded in power-efficient system-on-a-chip (SoC) devices built with 65 nm generation and subsequent silicon-on-insulator (SOI) CMOS semiconductor processes. Also, on the 2 Mbit test chip, the TTRAM cell size is 0.33 µm2, over five percent smaller than the 0.35 µm2 cell size of a 130 nm CMOS process embedded DRAM test chip fabricated separately by Renesas. www.hbi.de /clients/Renesas/pms05/26_09/09-05_RAM_Englisch.php   (562 words)

My Atari - The TT030 I had planned it, that using the memory from Both the STE's, and the TT, I had 14 sticks of 1MB, and also the pile of 256k sticks, and if they worked too, a further 12 sticks of 256MB (3MB). The STRAM was soldered on, like the MegaST, and the TTRAM was on a weird Memory expantion Module, and that had Sips!!! This works to be fair, and is reasonably reliable, unless you push it, and the biggest annoying thing about this, is that although I bought it for £40 I later downloaded a newer version from the net! www.btinternet.com /~thefatrakoon/atari/my-tt.htm   (793 words)

Embedded memory on SOI set for expansion - Semiconductor Fabtech   (Site not responding. Last check: 2007-09-16) Renesas Technology is licensing its capacitor-less Twin Transistor RAM (TTRAM) technology that was launched in September 2005 to US based, Emerging Memory Technologies in an effort to expand the IP model for the novel technology. The TTRAM memory cell uses two transistors which are serially connected onto the SOI substrate, eliminating the need for a metal-insulator-metal capacitor, as per conventional CMOS processes. There is also no requirement for negative or step-up voltage allowing scaling beyond the 65nm node while providing better low voltage operation within SoC designs. www.fabtech.org /content/view/1557/74   (269 words)

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NE Asia Online2005 Nov : Capacitorless Twin-Transistor RAM   (Site not responding. Last check: 2007-09-16) This high-density capacitorless twin-transistor RAM (TTRAM) achieves high-speed operation and low power consumption. The memory design allows fast, high-density storage to be embedded in power-efficient system-on-chip (SoC) devices built with 65nm generation and subsequent silicon-on-insulator (SOI) CMOS processes. The TTRAM memory cell operations don't require a step-up voltage or negative voltage as DRAM cells do, so the new cell design is suitable for use with future finer processes and lower operating voltages. neasia.nikkeibp.com /neasia/002560   (256 words)

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TTRAM   (Site not responding. Last check: 2007-09-16) He seems to have no problem in critiqueing our genius coach in his overpowering win over the Slackers or throwing out lame insults to the esteemed and divine Dick Vermeil, but whether he has what it takes to tackle this TT problem.....I don't know. :-) RK ----- Original Message ----- From: ScottHeath at ASKProductions To: rampage at lists.rollanet.org Sent: Sunday, January 20, 2002 6:48 PM Subject: Re: TTRAM I'm no KC lover but this is uncalled for. He was instrumental in the Super Bowl season. lists.rollanet.org /pipermail/rampage/Week-of-Mon-20020114/021249.html   (231 words)

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