Thin film transistor

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Topic: Thin film transistor

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	Thin-film transistor - Wikipedia, the free encyclopedia
		A thin film transistor (TFT) is a special kind of field effect transistor made by depositing thin films for the metallic contacts, semiconductor active layer, and dielectric layer.
		The best known application of thin-film transistors is in TFT LCDs, a variant of LCD technology.
		The channel region of a TFT is a thin film that is deposited onto a substrate (often glass, since the primary application of TFTs is in liquid crystal displays).
	en.wikipedia.org /wiki/Thin-film_transistor (176 words)

	Transistor - Encyclopedia.WorldSearch
		Transistor was also the common name in the sixties for a transistor radio, a pocket-sized portable radio that used transistors (rather than vacuum tubes) as its active electronic components.
		In bipolar transistors, the semiconductor is formed into structures called p-n junctions that allow electricity to flow in only one direction through them – that is, they are a conductor when voltage is applied in one direction, and an insulator when it is applied in the other direction.
		The transistor, considered by many to be one of the greatest inventions in modern history, ranks with the printing press and banking.
	encyclopedia.worldsearch.com /transistor.htm (4924 words)

	Thin film transistors, thin film transistor arrays, and a process for preparing the same - Patent 4335161
		Where the thin film transistor array is being used to drive an electro-optical display such as, for example, a liquid crystal display or an electroluminescent display, it is desirable that the drain electrode form one of the electrodes of the electro-optical display and therefor should be larger in size than the drain formed herein.
		Thus, it is impossible to achieve a thin film transistor by the single pump-down technique where photolithographic techniques are employed in the fabrication of the layers next adjacent to the semiconductive layer.
		It is known by those working in the field of thin film transistors that devices having more suitable characteristics are prepared when the interfaces between the various layers of the thin film transistors are prepared in a single vacuum pump-down.
	www.freepatentsonline.com /4335161.html (4631 words)

	World Intellectual Property Organization
		A thin film transistor as claimed in claim 13, wherein a portion of the semiconductor layer aligned with the spacing between the source and drain electrodes is thinner than the semiconductor layer beneath the source and drain electrodes.
		A thin film transistor as claimed in claim 12, wherein the first electrode pattern defines the source and drain electrodes of a top gate thin film transistor and is provided over the semiconductor layer, the gate insulator layer is provided over the first electrode pattern, and the second electrode pattern defines a gate electrode.
		A thin film transistor as claimed in claim 12, wherein the first electrode pattern defines source and drain electrodes of a top gate thin film transistor, the semiconductor layer is provided over the first electrode pattern, the gate insulator is provided over the semiconductor layer, and the second electrode pattern defines a gate electrode.
	www.wipo.int /ipdl/IPDL-CIMAGES/view/pct/getbykey5?KEY=01/15234.010301&ELEMENT_SET=DECL (5265 words)

	dimitrakopoulos.txt
		Since the structure of this thin film is different from the structure of single crystals of pentacene, we must distinguish between a "thin-film phase" and a "single-crystal phase" of pentacene.
		Exposure of poly(3-alkylthiophene) films to air causes an increase in conductivity and a subsequent degradation of the transistor on-off characteristics.
		Although optical characterization of the films indicated a tendency of the polymer backbones to align parallel to the trough barriers, this anisotropy was not apparent in the electrical measurements.
	www.research.ibm.com /journal/rd/451/dimitrakopoulos.txt (9271 words)

	No Title
		The characteristics of amorphous silicon (a-Si) and polysilicon (poly-Si) Thin Film Transistors (TFTs) are strongly affected by the distribution of localized states in the energy gap and may be also affected by the properties of the gate dielectric.
		The films are grown by dc reactive magnetron sputtering of a silicon target in a plasma of (Ar + H
		The insight into the device physics based on the two dimensional simulations allowed us to develop physics-based TFT models, which incorporate the gate voltage dependencies of the field effect mobility, temperature dependencies of the device parameters, contact resistances, the stress effects, the effects related to the capacitance dispersion.
	www.mrs.org /meetings/spring97/abstract_book/g/g2 (956 words)

	Thin Film Transistor Technologies
		A transistor whose active, current-carrying layer is a thin film (usually a film of silicon), in contrast to MOSFETs, which are made on Si wafers and use the bulk-silicon as the active layer.
		The development of a thin-film transistor (TFT) technology for use with plastic substrates is still in its infancy.
		The goal is to achieve polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) with current-driving capability far exceeding that of conventional amorphous-silicon TFTs typically employed in high-performance active-matrix liquid-crystal displays today.
	www.eecs.berkeley.edu /~tking/tft.html (1167 words)

	Solid State Technology - Deposition: Pentacene organic thin-film transistors and ICs
		Since handling of thin, flexible plastic films during device processing is often complicated by problems related to film warpage and poor thermalcontact, the 50µm-thick PET film was mounted to a glass carrier using a 200µm-thick polyethylene adhesive layer prior to device fabrication.
		W-cm, evaporated pentacene films have a tendency to form a carrier accumulation channel at the substrate interface, and a positive gate voltage is often necessary to deplete the channel.
		By integrating two transistors in a circuit configuration such that one of them is acting as a voltage-controlled switch (or driver) and the other as an active load, a simple voltage inverter can be made.
	sst.pennnet.com /Articles/Article_Display.cfm?Article_ID=66162 (3123 words)

	publications.html
		N.A. Hastas, D.H. Tassis, C.A. Dimitriadis, and G. Kamarinos, "Determination of interface and bulk traps in the subthreshold region of operation of polycrystalline silicon thin-film transistors", IEEE Trans.
		Thin film Li-ion batteries with carbon anode, J. Solid State Electrochem., J. Merta, J. Bludska, I. Jakubec, L. Papadimitriou, G. Perentzis (submitted).
		Maria Drakaki, George Fikos and Stylianos Siskos, "Subthreshold Behaviour Modeling of FGMOS Transistors Using the ACM and the BSIM3V3 Models", Proceedings of the Mediterranean Electrotechnical Conference (MELECON) 2004, Dubrovnick, 12-15 May 2004.
	genesis.ee.auth.gr /MHPAnet/en/publications.html (2492 words)

	Interface Physics - Research Projects
		Stannowski, A.M. Brockhoff, A. Nascetti, and R.E.I. Schropp, Metastability of hot-wire silicon thin-film transistors, ICAMS 18 (Intern.
		We demonstrated the application as gate-dielectric in bottom-gate thin-film transistors (TFT), yielding a field-effect mobility of 0.3 cm2/Vs in a TFT with both a-Si:H and a-SiNx deposited by HWCVD.
		Hydrogenated amorphous silicon (a-Si:H) is a semiconductor material that is used in many applications such as thin-film transistors (TFTs) and solar cells.
	www.phys.uu.nl /~wwwgf/projects/tft.html (1084 words)

	Publications
		Kuo, “Silicon Carbon Oxynitride as a Gate Dielectric of a Thin Film Transistor,” Electrochem.
		Fabrication and Characterization of Hydrogenated Amorphous Silicon Bipolar Thin Film Transistor (B-TFT),” MRS Symp.
		Kuo, “Hydrogenation of Amorphous Silicon Thin Film Transistors,” Electrochem.
	yuekuo.tamu.edu /Pub.htm (3179 words)

	Microcrystalline thin-film transistors
		Thin film transistors are a prime interest topic because of their applications in imagers, printers and large active matrix liquid crystal displays.
		The Photovoltaic Group is developing this technology in collaboration with the Electronic Devices Group of the UPC (Universitat Politècnica de Catalunya).
	www.fao.ub.es /recerca/aplicada/fotovoltaic/node4.html (43 words)

	thin film
		Such improvements using thin films, deposition and thermal spray processes, carbon aerogels, carbon nanotubes and spinel structures are considered here, with special focus on space applications.
		As their name suggest, CVD Technologies use chemical vapour deposition processes to produce thin films, in particular photo-active thin films with a range of applications.
		An ultrathin film containing 1-nanometer thick clay particles has been created for the first time, an accomplishment that may yield new materials and devices for medicine, electronics and engineering, according to Purdue University and Belgian scientists.
	www.azonano.com /searchresults.asp?matkeyword=thin+film (473 words)

	John G. Shaw
		An investigation of localized states in a-Si:H thin film transistors by a comparison of transient measurements and numerical simulations, Mater.
		Numerical simulations of amorphous and polycrystalline silicon thin-film transistors, Extended abstracts on the twenty-second conference on Solid-State Devices and Materials, Sendia, Japan, August, 999-1002, 1990.
		Influence of traps on the characteristics of thin-film transistors, Proceedings of the 14th International Conference on Amorphous Semiconductors (ICAS-14), Garmish-Partenkirchen, Germany, August 19-23, 1991.
	members.localnet.com /~jshaw/Publications.htm (1688 words)

	TFT Research Group
		The Thin Film Transistor Research Group at the Rensselaer Polytechnic Institute is involved in all aspects of amorphous silicon and polysilicon thin film transistor research.
		M.S. Shur, H.C. Slade, T. Ytterdal, L. Wang, and Z. Xu, "Modeling and Scaling of a-Si:H and Polysilicon Thin Film Transistors," invited paper to be presented at the Materials Research Society Spring 1997 Meeting, Amorphous and Microcrystalline Silicon Technology, April 1997.
		H.C. Slade and M. Shur, Analysis of Bias Stress on the Performance of Unpassivated Hydrogenated amorphous Silicon Thin Film Transistors, IEEE Trans.
	nina.ecse.rpi.edu /tft (676 words)

	Title page for etd-0730102-171841
		Under appropriate deposition conditions, tungsten (W) films can be selectively deposited on poly-Si gate electrodes to form spacers without any additional etching process.
		To further study the characteristics of W-spacer TFTs, devices with different channel thickness, spacer thickness and LDD dopant density are fabricated.
		The transconductance of our devices is compatible to that of conventional devices, because W-spacer acts as a part of gate electrode to induce channel when the device is operated under ON state.
	etd.lib.nsysu.edu.tw /ETD-db/ETD-search/view_etd?URN=etd-0730102-171841 (208 words)

	Amazon.com: Books: Thin-Film Transistors
		Thin-film transistors (TFTs) have in the past 10 years become the "rice" of the electronic flat panel industry, just as silicon chips were earlier called the "rice," or staple, of the electronic computer revolution.
		Assesses the development, properties, processing, patterning, and device characterization of thin film transistors based on amorphous polycrystalline silicon.
		by Cherie R. Kagan (Editor), Paul Andry (Editor) "Thin-film transistors (TFTs) have in the past 10 years become the "rice" of the electronic flat panel industry, just as silicon chips were earlier called..." (more)
	www.amazon.com /exec/obidos/tg/detail/-/0824709594?v=glance (406 words)

	Books - Materials - Thin Film Transistors - Materials and Processes
		This is the first reference on amorphous silicon and polycrystalline silicon thin film transistors that gives a systematic global review of all major topics in the field.
		Thin Film Transistors provides practical information on preparing individual functional a-Si:H TFTs and poly-Si TFTs as well as large-area TFT arrays.
		Also covered are basic theories on the a-Si:H TFT operations and unique material characteristics.
	www.azom.com /Sale.asp?SaleID=113 (151 words)

	Energy Citations Database (ECD) - Energy and Energy-Related Bibliographic Citations
		Organic semiconductors are being tested as the active electronic elements of thin film field effect transistors (TFTs) and light-emitting diodes.
		The basis for understanding the criteria for materials selection in organic TFTs is currently quite primitive, and in order to provide information on this question, the present work reports a study of TFTs fabricated from C{sub 70}.
		The fullerenes C{sub 60} and C{sub 70} are found to exhibit markedly different performances as the active semiconductor in TFT devices.
	www.osti.gov /energycitations/product.biblio.jsp?osti_id=226669 (184 words)

	Iowa Thin Film Technologies : Thin Film Transistors & Diodes
		ITFT has developed the world’s first thin film amorphous silicon transistor on a plastic substrate using a true roll-to-roll manufacturing process.
		ITFT’s core competency in the development and manufacture of roll-to-roll semiconductor devices is being leveraged to create thin film transistor and diode products on a polymer substrate for a variety of computing and electronic applications.
		Photos of actual thin film transistors developed by Iowa Thin Film Technologies.
	www.iowathinfilm.com /products/td (123 words)

	Thin Film Science and Technology: books on Thin Film Science and Technology
		Thin Film Materials and Devices--Developments in Science and Thechnology: Proceedings of the Tenth International School on Condensed Matter Physics, Varna, Bulgaria 1-4 September 1998
		Thin Films for Photovoltaic and Related Device Applications: Symposium Held April 8-11, 1996, San Francisco, California, U.S.A. [Materials Research Society Symposium Proceedings, Vol.
		Film Synthesis and Growth Using Energetic Beams (Symposium Proceedings Ser., Vol.
	www.campusi.com /keyword_Thin_Film_Science_and_Technology.htm (792 words)

	Additive jet printing of polymer thin-film transistors
		Organic thin-film transistors (TFTs) were fabricated by direct patterning of solution-processable semiconductors consisting of either poly(9,9’-dioctyl-fluorene-co-bithiophene) or a regioregular poly(thiophene).
		Paul, K. Wong, W. Ready, S. Street, R. Additive jet printing of polymer thin-film transistors.
		Home > Research > Publications > Additive jet printing of polymer thin-film transistors
	www.parc.xerox.com /research/publications/details.php?id=4983 (161 words)

	PARC 2001 Publications
		Knipp, D. Street, R. Krusor, B. Ho, J. Apte, R. Influence of the dielectric on the growth and performance of pentacene thin film transistors.
		Van de Walle, C. Point defects and impurities in III-nitride bulk and thin film heterostructures.
		Knipp, D. Street, R. Krusor, B. Apte, R. Ho, J. Poly crystalline pentacene thin films for large area electronic applications.
	www.parc.com /research/publications/results.php?year=2001 (5381 words)

	High-Performance Polycrystalline SiGe Thin-Film Transistors Using Al O Gate Insulators (ResearchIndex)
		0.4: Application of SiO2 aerogel film with low dielectric..
		Even without any hydrogen passivation, good TFT performance was measured on devices with 50-nmthick...
		The composition of the deposited aluminum oxide was found to be almost stoichiometric (i.e., Al2O3), with a very small fraction of nitrogen incorporation.
	citeseer.ist.psu.edu /337420.html (277 words)

	New Materials Japan: Insulating substrate for thin-film transistors patented.@ HighBeam Research
		Conventional thin-film devices such as insulated-gate field-effect transistors (FETs) use a thin semiconductor film of silicon as an active layer about 1500 A thick, so that when electrodes are formed on this thin semiconductor film, satisfactory contacts can be made by bringing a metal such as aluminium into direct contact with the film.
		The Semiconductor Energy Laboratory Co Ltd has patented the design of an electronic circuit formed on an insulating substrate with thin-film transistors (TFTs) forming semiconductor layers.
		New Materials Japan: Insulating substrate for thin-film transistors patented.@ HighBeam Research
	www.highbeam.com /library/doc0.asp?docid=1G1:69801212&refid=ink_tptd_np (175 words)

	Compare Prices,Price Comparison,Comparison Shopping Online
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	www.smarter.com /books-1/product/thin_film_transistors-1684743 (111 words)

	Rogers' Research Publications
		S.-H. Hur, M.-H. Yoon, A. Gaur, M. Shim, A. Facchetti, T.J. Marks and J.A. Rogers, “Organic Nanodielectrics for Low Voltage Carbon Nanotube Thin Film Transistors and Complementary Logic Gates,” Journal of the American Chemical Society ASAP (2005).
		J.A. Rogers and K.A. Nelson, “Photoacoustic Determination of the Residual Stress and Transverse Isotropic Elastic Moduli in Thin Films of the Polyimide PMDA/ODA,” IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 42(4), 555-566 (1995).
		J.A. Rogers and C. Case, “Acoustic Waveguide Properties of a Thin Film of Nanoporous Silica on Silicon,” Applied Physics Letters, 75(6), 865-867 (1999).
	rogers.mse.uiuc.edu /publications.html (4557 words)

	Table of contents for Library of Congress control number 2003043759
		Hydrogenated Amorphous Silicon Thin-Film Transistors 71 Jerzy Kanicki and Sandrine Martin 4.
		Thin-Film Transistors in Active-Matrix Liquid Crystal Displays (AMLCDs) 209 Frank R. Libsch Part II The Emergence of Alternative Organic Semiconductors and Devices 6.
		Vacuum-Deposited Organic Thin-Film Field-Effect Transistors Based on Small Molecules 333 Christos D. Dimitrakopoulos 8.
	www.loc.gov /catdir/toc/fy042/2003043759.html (195 words)

	JKPublications-2003.doc
		Swensen, J. Kanicki and A.J. Heeger, “Influence of Gate Dielectric on the Electrical Properties of F8T2 Polyfluorene Thin-Film Transistors,” Proc.
		Martin, M. Hamilton and J. Kanicki, “Organic-Polymer Thin-Film Transistors for Active-Matrix Flat Panel Displays?” J. of the SID, vol.
		Martin, L. Dassas, M. Hamilton and J. Kanicki, “Electrical Instabilities of Organic Polymer Thin-Film Transistors,” IDRC 03 (Int.
	www.eecs.umich.edu /omelab/assets/files/JKPublications-2003.doc (488 words)

	Jackson's Electronics Research Group
		Gundlach,¡§Organic Thin Film Transistors for Low-Cost Large-Area Electronic Applications,¡¨ AVS 2nd Int'l Conference on Microelectronics and Interfaces, 2001.
		Gundlach, C. Kuo, C. Sheraw, J. Nichols, and T. Jackson, ¡§Improved Organic Thin Film Transistor Performance Using Chemically‑Modified Gate Dielectrics¡¨, SPIE 2001.
		Sheraw, T. Jackson, D. Eaton, and J. Anthony, "Organic Thin Film Transistors Based on Functionalized Pentacene Active Layers," 44th Electronic Materials Conference Digest, June 2002.
	jerg.ee.psu.edu /Publications (1752 words)

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