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Topic: Wet Etching

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	Wet Etching; Wet Processing - Page 1 of 2
		A simple wet etching process may just consist of dissolution of the material to be removed in a liquid solvent, without changing the chemical nature of the dissolved material.
		A basic wet etching process may be broken down into three (3) basic steps: 1) diffusion of the etchant to the surface for removal; 2) reaction between the etchant and the material being removed; and 3) diffusion of the reaction byproducts from the reacted surface.
		Reduction-oxidation (redox) reactions are commonly encountered in wafer fab wet etching processes, i.e., an oxide of the material to be etched is first formed, which is then dissolved, leading to the formation of new oxide, which is again dissolved, and so on until the material is consumed.
	www.siliconfareast.com /wetetch.htm (468 words)

	Encyclopedia :: encyclopedia : Wet etching (Site not responding. Last check: )
		Wet etching is the removal of material by immersing the wafer in a liquid bath of chemical etchant.
		In silicon, a popular anisotropic wet etch substrate, the initial (0 degree) surface is called 100 and etches a hundred times faster that the 110 (45 degree) and 111 (54 degree) surfaces.
		Wet etching is also used for the characterization of the quality of a wafer.
	www.hallencyclopedia.com /topic/Wet_etching.html (242 words)

	Method of manufacturing piezoelectric device using direct bonded quartz plate - Patent 6719914
		However, the process of wet etching exposed sides of the quartz plates for calibration of the resonance frequency causes the quartz plates unsymmetrical in sectional shape of the dissolved surfaces as shown in FIG.
		The upper quartz plate is thus etched to form etched trench 7a down to a depth of the bonded plane.
		After the wet etching is completed, there are slits 12 cut inwardly from both sides (protuberant portions) of the quartz plates 7 and 8 along their bonded plane as shown in FIG.
	www.freepatentsonline.com /6719914.html (4022 words)

	Chemical etching - Encyclopedia, History, Geography and Biography
		Chemical etching (sometimes called chemical milling or wet etching) is the process of using acids, bases or other chemicals to dissolve away unwanted materials such as metals, semiconductor materials or glass.
		Anisotropic etching does not cause undercutting, and is preferred in applications where straight side walls are essential.
		Etching is used in the manufacturing of printed circuit boards and semiconductor devices and the preparation of metallic specimens for microscopic observation.
	www.arikah.com /encyclopedia/Wet_etching (384 words)

	Etching Processes
		Wet etching works very well for etching thin films on substrates, and can also be used to etch the substrate itself.
		Anisotropic processes allow the etching to stop on certain crystal planes in the substrate, but still results in a loss of space, since these planes cannot be vertical to the surface when etching holes or cavities.
		The material to be etched is dissolved at the surface in a chemical reaction with the gas molecules.
	www.mems-exchange.org /MEMS/processes/etch.html (1086 words)

	Etching Processes
		Wet etching works very well for etching thin films on substrates, and can also be used to etch the substrate itself.
		Anisotropic processes allow the etching to stop on certain crystal planes in the substrate, but still results in a loss of space, since these planes cannot be vertical to the surface when etching holes or cavities.
		The material to be etched is dissolved at the surface in a chemical reaction with the gas molecules.
	www.memsnet.org /mems/beginner/etch.html (1086 words)

	OMRON \| Corporate Profile \| Omron's Technology
		Etching is a process to corrode the surface of a silicon wafer or other materials, or remove parts of them using chemical liquids or reactive ions.
		Wet etching is accomplished by immersing and dissolving the material in a chemical solution.
		Wet etching is less costly and more productive, while dry etching is more suitable if extremely fine fabrication is needed.
	www.omron.com /corporate/about_omron/technavi/vol_002/mems/mems_02.html (404 words)

	microFAB wet etching
		Wet chemical etching is commonly used for uniform stripping or patterning through a mask of dielectric and metallization layers.
		Another special wet etching process used in bulk micromaching technology is the anisotropic, crystal-oriented, KOH or TMAH etch.
		All standard etch bathes are SPC controlled (etch rate monitoring).
	www.microfab.de /services/wet_etching.htm (269 words)

	Semiconductors: Silicon: Device Fabrication: Etching
		Wet Chemical Etching: Wet etching is accomplished by submersion of the wafer in an acid bath.
		Physical Bombardment: Physical etching processes are similar to sandblasting; argon gas atoms are used to physically bombard the layer to be etched, and a vacuum pump system is used to remove dislocated material.
		The wafer to be etched is attached to a negative electrode, or "target," in a glow-discharge circuit.
	www.osha.gov /SLTC/semiconductors/devicefab/etching.html (688 words)

	dbanks - Wet Etching - Microengineering Intro
		Wet etching is a blanket name that covers the removal of material by immersing the wafer in a liquid bath of the chemical etchant.
		The KOH etches the silicon that is not protected by the mask, and etches around the boron doped silicon (figure 4d).
		With complex designs, etching the wafer from the front in KOH may cause problems where slow etching crystal planes prevent it from etching beneath the boron doped silicon.
	www.dbanks.demon.co.uk /ueng/wetetch.html (667 words)

	TU Chemnitz: Center for Microtechnologies: Wet Etching, Plast...
		Orientation dependent wet etching is the classic process from which the development of micro- mechanics started, and still it is the most widely used technique to produce 3D-microstructures.
		Etching removes atoms, and the resulting structures are situated inside the original volume of a wafer.
		The characterisation of etched and plastic deformed shapes and surfaces and the measurement of mechanical properties of silicon microelements are further fields of research in the materials science group.
	www.zfm.tu-chemnitz.de /mm_wet_etching.php (286 words)

	ETCHING
		In sputter etching gas pressure is low and rf energy high; in plasma etching gas pressure is higher and rf energy lower; in reactive ion etching both parameters are intermediate.
		In contrast to wet etching, reactive ion etching (RIE) is highly an isotropic because ion bombardment is perpendicular to the surface; bombardment helps to remove etch-inhibiting species from the bottom but leaves them in place on the side walls; thus, deep, straight-sided grooves can be made.
		After plasma etching is completed, the reactive gas is replaced with oxygen and the plasma is used to strip the resist.
	members.tripod.com /exe_mak/etching1.htm (570 words)

	Microfabrication by electrochemical metal removal
		Wet chemical etching baths contain chemicals that are generally aggressive and toxic [2], thus posing safety and disposal problems.
		This is particularly the case in chemical etching, where the etch boundary usually recedes at a 45 ° angle relative to the surface [2].
		Etch factor is defined as the ratio of the amount of straight-through etch to the amount of undercut [6].
	www.research.ibm.com /journal/rd/425/datta.html (6278 words)

	Wiring substrate and gas discharge display device and method therefor - Patent 6261144
		If electrode is formed by wet etching from a resist including defects, the regions corresponding to the defects are similarly etched, which causes breakage of wiring.
		Since this invention forms the material layer (resist) by means of a blaster, etching solution does not permeate the interface between the protecting layer and the material layer, which lessens the risk of forming defects in the material layer (resist).
		Further, if the efficiencies of blast process and wet etching process are taken into consideration, it is preferable to fabricate down to the Cr layer 11a by blast process because of the material characteristics of Cu layer 11b and film thickness thereof.
	www.freepatentsonline.com /6261144.html (5836 words)

	Wet etching
		Wet etching is widely used in microelectronics and MEMS devices microfabrication.
		This is the case, for example, of KOH etching, that is generally done at 80°C. Another example of heating use is for removing photoresist with aceton.
		A particular case in wet etching is the mesh selectivity that is observed with etchants like KOH or TMAH on crystal silicon.
	matthieu.lagouge.free.fr /microtechnology/wet_etch.html (611 words)

	Smart Optoelectronic Database Filter Based on a CMOS Compatible Photonic VLSI Device Technology
		Wet etch post processing techniques have also been extensively studied through the last decades as inexpensive release process for microstructures on a standard CMOS chips.
		Before performing the wet etch it is necessary to remove the native oxide formed on the exposed silicon surface.
		First to terminate the etch process, the chip is removed from etch solution and immerse in DI water for 5 minutes.
	www.ececs.uc.edu /~psdl/projects/CMOSMEMS/CMOSMEMS.htm (1475 words)

	Wet etching of silicon
		The etch of monocrystalline silicon wafers along preferential directions is a typical process step in the fabrication of micromechanical devices.
		As a consequence, certain etching formulations are favoured in removing atoms from (110) and (100) planes.
		A popular anisotropic wet etching bath is obtained with a solution of 40% in weigth of potassium hydroxide (KOH) in isopropyl-alchol (this acts as a "moderator", i.e.
	www.microtechweb.com /kb/si_etch.htm (635 words)

	Novel semiconductor wafer lifter patent invention
		In one type of selective etching, a mask layer is used to protect specific regions of a substrate on a wafer surface, then a selective etch removes material not covered by the mask.
		Etching can be performed through two methods, one is dry etching using gas, while another is wet etching using wet chemical.
		Plasma etching, ion beam etching and reactive ion etching are included in the former, while immersion etching and spray etching are included in the latter.
	www.freshpatents.com /Novel-semiconductor-wafer-lifter-dt20060907ptan20060196530.php (1766 words)

	Fluent NEWS - Spring 2003 - Optimizing Transformer Designs
		The wet chemical etching of single wafers is one of the most important processes in the semiconductor industry.
		Compared to wet bench processes, in which a stack of wafers is submerged into the etchant, spin processing requires significantly less time to complete.
		The gas flow serves the purpose of exhausting toxic gases released by the etching process, and trapping tiny acidic droplets at the walls that result from the spraying of the etchant.
	www.fluent.com /about/news/newsletters/03v12i2/a24.htm (602 words)

	Plasma Etching - Anatech LTD (Site not responding. Last check: )
		Similarly, plasma etching has grown from the use of relatively simple, parallel-plate configurations for a variety of films, to million-dollar modular chambers with multiple frequency generators, electrostatic chucks, externally controlled wall temperatures, and a variety of process control sensors designed specifically for one type of film.
		Etch selectivity to different films is also essential, since resist material is occasionally inadequate to provide a sufficient mask for features which must be etched.
		To etch a Si trench, for example, an oxide layer must be defined as a mask for the Si, since the presence of organics during trench etching can degrade process performance.
	www.anatechusa.com /Plasma_Etching/default.html?kc=TgcqyWgZCg6fmGC1OVfD30dTlgmPWfbynDZy25rg (998 words)

	[Ganoksin] Jewelry Making - Advanced Etching of Copper, Brass and bronze
		An ideal finish is achieved by rubbing with wet 600 Wet and Dry paper (emery or corundum) or scrubbing with wire brush, scotch brite or superfine steel wool.
		The surface that has been etched away has an attractive texture showing grain growth of the metal (shown here in a piece of etched bronze - a pen was used for resist).
		IMPORTANT: When the piece is etched to the desired depth, remove the piece and wash immediately with water and scrub with an old toothbrush or brass brush and baking soda (or ammonia solution).
	www.ganoksin.com /borisat/nenam/advanced-etching.htm (1064 words)

	ME 117/220 Lecture #15
		On (100) wafers, any etch pattern is eventually terminated by (111) planes which intersect the wafer surface parallel and perpendicular to the flat with a tilt of 53 degrees.
		Etch stop layers may be used to determine the final thickness of an etched structure.
		Dry etching generally applies only to thin films, since it is expensive to operate, and does not generally etch fast enough (0.05 microns/min) to go all the way through a wafer in a reasonable time.
	www.yale.edu /eas996/smart/lect_15.html (1716 words)

	Energy Citations Database (ECD) - Energy and Energy-Related Bibliographic Citations
		The etching process is studied as functions of the electrolytes, their concentration, semiconductor doping level, and x-ray intensity and energy.
		Smoothly etched surfaces are achievable with a root-mean-square surface roughness of 0.7--2.0 nm.
		The chemistry of etched surfaces is studied using x-ray photoelectron spectroscopy and compared to that of as-received surfaces.
	www.osti.gov /energycitations/product.biblio.jsp?osti_id=40204931&query_id=0 (287 words)

	MICRO: Wet Surface tech
		Wet etching is accomplished by immersing wafers in a mixture of H
		Meanwhile, an etch rate of approximately 2.0 nm/min is attained at an HF concentration of 0.04%, while an etch rate of 0.6 nm/min is attained by reducing the HF concentration to 0.0075%.
		Since etch processes generally tend to be diffusion limited, the mass transport of reaction by-products and the replacement of etchant species is critical to maintaining a sustained and uniform process.
	www.micromagazine.com /archive/05/01/knotter.html (2944 words)

	Laboratory Experiment Ten (Site not responding. Last check: )
		There are basically two methods possible used in the etching process, dry etching and wet chemical etching.
		Dry etching uses small amounts of gases and is capable of producing either isotropic or anisotropic profiles, depending on the gas chemistry used and the configuration of the etching system.
		Wet etching relies heavily on chemicals and can either be an isotropic process or anisotropic process depending on the crystallography of the substrate and type of etching solution used.
	mitghmr.spd.louisville.edu /course/exp10.html (445 words)

	CNM (Site not responding. Last check: )
		Class 10000 in the room and class 1000 in the wet process stations.
		and Si are used as a mask layers during the etch.
		The process can be performed by wet etching in HF solutions as well as in HF vapours.
	www.cnm.es /imb/pages/services/microsyslabcas.htm (138 words)

	Manufacturing :: Etching
		Etching techniques are used to remove material from wafers.
		In wet chemical etching processes, the wafers are immersed in a liquid solution, which removes the unwanted material.
		The techniques differ in the quality of the etch achieved, the level of detail the etch can achieve, the exact shape of the edges of the etched material, the material you are trying to etch, and the cost.
	wfc3.gsfc.nasa.gov /MARCONI/etching.html (149 words)

	:::::Welcome to PKL:::::
		Wet etching (chemical etching) and dry etching (plasma or ion etching, thus, physical etching) are both commonly used methods in the manufacturing of photomask nowadays.
		The resultant PR layer protects the Cr layer underneath during the etching process, resulting in the removal of Cr layer which is exposed to the etching agent (either wet or dry).
		Wet etching is preferred for lower grade photomask which can tolerate relative higher etch bias.
	www.pkl.co.kr /english/product/product08.html (224 words)

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