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| | December 2003 JMR (Site not responding. Last check: 2007-10-21) |
 | | State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Zhongshan University, Guangzhou 510275, People's Republic of China, and Department of Physics, Xiangtan University, Xiangtan 411105, People's Republic of China |
 | | Department of Physics, Xiangtan University, Xiangtan 411105, People's Republic of China |
 | | Boron nitride (BN) nanocrystals with explosion (E) phase were prepared by a novel laser-assisted materials fabrication, i.e., pulsed-laser induced liquid (acetone)/solid (hexagonal boron nitride bulk) interfacial reaction at normal temperature and pressure. |
| www.mrs.org /publications/jmr/jmra/2003/dec/007.html (198 words) |
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